MBRA340, NRVBA340, Schottky Power Rectifier

1 MBRA340, NRVBA340, SBRA340T3G. Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon Power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay Schottky BARRIER. contact. Ideally suited for low voltage, high frequency rectification, or Rectifier . as free wheeling and polarity diodes in surface mount applications AMPERES. where compact size and weight are critical to the system. 40 VOLTS. Features Small Compact Surface Mountable Package with J Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMA. Very Low Forward Voltage Drop CASE 403D. Guardring for Stress Protection STYLE 1. NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 1 2.

2 Qualified and PPAP Capable* Cathode Anode These Devices are Pb Free, Halogen Free/BFR Free and are RoHS. Compliant MARKING DIAGRAM. Mechanical Characteristics: A34. Case: Epoxy, Molded AYWWG. Weight: 70 mg (approximately). Finish: All External Surfaces Corrosion Resistant and Terminal A34 = Device Code Leads are Readily Solderable A = Assembly Location**. Lead and Mounting Surface Temperature for Soldering Purposes: Y. WW. = Year = Work Week 260 C Max. for 10 Seconds G = Pb Free Package Polarity: Cathode Lead Indicated by Polarity Band (Note: Microdot may be in either location). ESD Ratings: **The Assembly Location code (A) is front side Machine Model = C optional. In cases where the Assembly Location is Human Body Model = 3B stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank.

3 Device Meets MSL 1 Requirements ORDERING INFORMATION. Device Package Shipping . MBRA340T3G. NRVBA340T3G, SMA 5,000 /. NRVBA340T3G VF01, (Pb Free) Tape & Reel SBRA340T3G. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2018 Rev. 9 MBRA340T3/D. MBRA340, NRVBA340, SBRA340T3G. MAXIMUM RATINGS. Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V. Working Peak Reverse Voltage VRWM. DC Blocking Voltage VR. Average Rectified Forward Current IO A. (At Rated VR, TL = 100 C) Non Repetitive Peak Surge Current IFSM A. (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100.

4 Storage/Operating Case Temperature Tstg, TC 55 to +150 C. Operating Junction Temperature (Note 1) TJ 55 to +150 C. Voltage Rate of Change dv/dt V/ms (Rated VR, TJ = 25 C) 10,000. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS. Characteristic Symbol Value Unit Thermal Resistance Junction to Lead (Note 2) R JL 15 C/W. Thermal Resistance Junction to Ambient (Note 2) R JA 81. 2. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS. Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) VF TJ = 25 C TJ = 100 C Volts (IF = A) Maximum Instantaneous Reverse Current IR TJ = 25 C TJ = 100 C mA.

5 (VR = 40 V) 15. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle TYPICAL CHARACTERISTICS. 10 10. IF, INSTANTANEOUS FORWARD. IF, INSTANTANEOUS FORWARD. CURRENT (AMPS). CURRENT (AMPS). 1 TJ = 125 C 1. TJ = 125 C. TJ = 100 C. TJ = 100 C TJ = 25 C TJ = 55 C TJ = 25 C TJ = 55 C. VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD. VOLTAGE (VOLTS). Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 2. MBRA340, NRVBA340, SBRA340T3G. IR, MAXIMUM REVERSE CURRENT (AMPS). 100e 3 100e 3. TJ = 125 C TJ = 125 C. IR, REVERSE CURRENT (AMPS).

6 10E 3. 1E 3 10E 3. TJ = 100 C. TJ = 100 C. 100e 6. 1E 3. 10E 6. TJ = 25 C. 1E 6 TJ = 25 C. 100e 6. 100e 9 TJ = 55 C TJ = 55 C. 10E 9 10E 6. 1E 9. 100e 12 1E 6. 0 10 20 30 40 0 10 20 30 40. VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS). Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS). PFO, AVERAGE Power DISSIPATION (WATTS). 5 dc SQUARE. 4 freq = 20 kHz WAVE. SQUARE WAVE dc 3. Ipk/IO = p Ipk/IO = 5 Ipk/IO = p 2. Ipk/IO = 5. Ipk/IO = 10. 1 Ipk/IO = 10. Ipk/IO = 20. 0 0. 25 50 75 100 125 150 0 1 2 3 4 5. TL, LEAD TEMPERATURE ( C) IO, AVERAGE FORWARD CURRENT (AMPS). Figure 5. Current Derating Figure 6. Forward Power Dissipation TJ, DERATED OPERATING TEMPERATURE ( C). 1000 125. TJ = 25 C. RqJA = 22 C/W. 115. C, CAPACITANCE (pF).

7 105 RqJA = 43 C/W. 95 RqJA = 63 C/W. 85. RqJA = 81 C/W. 75. RqJA = 96 C/W. 65. 100 55. 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40. VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS). Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating 3. MBRA340, NRVBA340, SBRA340T3G. R(t), TRANSIENT THERMAL RESISTANCE ( C/W). 100. D = 10 1. SINGLE PULSE. 1 10 100 1000. t, TIME (S). Figure 9. Thermal Response, Junction to Ambient (min pad). R(t), TRANSIENT THERMAL RESISTANCE ( C/W). 100. D = 10 1 SINGLE PULSE. 1 10 100 1000. t, TIME (S). Figure 10. Thermal Response, Junction to Ambient (1 inch pad). 4. MBRA340, NRVBA340, SBRA340T3G. PACKAGE DIMENSIONS. SMA. CASE 403D. ISSUE H. HE. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI , E 1982. 2. CONTROLLING DIMENSION: INCH.

8 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. MILLIMETERS INCHES. DIM MIN NOM MAX MIN NOM MAX. b D A A1 b c D POLARITY INDICATOR. OPTIONAL AS NEEDED E (SEE STYLES) HE L STYLE 1: PIN 1. CATHODE (POLARITY BAND). 2. ANODE. A. A1. L c SOLDERING FOOTPRINT*. SCALE 8:1 inches mm . *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein.

9 ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

10 All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part.