1N914 - Small Signal Diode - ON Semiconductor

1 DATA Semiconductor Components Industries, LLC, 2002 August, 2021 Rev. 51 Publication Order Number: 1N914 /DSmall Signal Diode1N91x, 1N4x48, FDLL914,FDLL4x48 ORDERING INFORMATIONPart NumberMarkingPackagePacking Method1N914914DO 204AH (DO 35)Bulk1N914 T50A914DO 204AH (DO 35)Ammo1N914TR914DO 204AH (DO 35)Tape and Reel1N914 ATR914 ADO 204AH (DO 35)Tape and Reel1N914B914 BDO 204AH (DO 35)Bulk1N914 BTR914 BDO 204AH (DO 35)Tape and Reel1N916916DO 204AH (DO 35)Bulk1N916A916 ADO 204AH (DO 35)Bulk1N916B916 BDO 204AH (DO 35)Bulk1N41484148DO 204AH (DO 35)Bulk1N4148TA4148DO 204AH (DO 35)Ammo1N4148 T26A4148DO 204AH (DO 35)Ammo1N4148 T50A4148DO 204AH (DO 35)Ammo1N4148TR4148DO 204AH (DO 35)Tape and Reel1N4148 T50R4148DO 204AH (DO 35)Tape and Reel1N44484448DO 204AH (DO 35)Bulk1N4448TR4448DO 204AH (DO 35)

2 Tape and ReelFDLL914 BlackSOD 80 Tape and ReelFDLL914 ABlackSOD 80 Tape and ReelFDLL914 BBlackSOD 80 Tape and ReelFDLL4148 BlackSOD 80 Tape and ReelFDLL4148 D87 ZBlackSOD 80 Tape and ReelFDLL4448 BlackSOD 80 Tape and ReelFDLL4448 D87 ZBlackSOD 80 Tape and Reel SOD 80 COLOR BAND MARKINGDEVICE 1ST BANDFDLL914 BLACKFDLL914A BLACKFDLL914B BLACKFDLL4148 BLACKFDLL4448 BLACK-1st band denotes cathode terminal and has wider widthLL 34 THE PLACEMENT OF THE EXPANSION GAPHAS NO RELATIONSHIP TO THE LOCATIONOF THE CATHODE TERMINALSOD80 Cathode BandDO 35 Cathode is denoted with a black band1N91x, 1N4x48, FDLL914, MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted) (Note 1)RatingSymbolValueUnitMaximum Repetitive Reverse VoltageVRRM100 VAverage Rectified Forward CurrentIO200mADC Forward CurrentIF300mARecurrent Peak Forward CurrentIf400mANon repetitive Peak Forward Surge CurrentPulse Width = Width = Temperature RangeTSTG 65 to +200 COperating Junction Temperature RangeTJ 55 to +175 CStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be These ratings are limiting values above which the serviceability of the Diode may be CHARACTERISTICSP arameterSymbolMaxUnitPower DissipationPD500mWThermal Resistance, Junction to AmbientRqJA300 CELECTRICAL CHARACTERISTICS (Values are at TA = 25 C unless otherwise noted) (Note 2)SymbolParameterConditionsMinMaxUnitVRB reakdown VoltageIR = 100 mA100 VIR = mA75 VVFF orward Voltage914B / 4448IF = = / 916 / 4148IF = 10 / 916 AIF = 20 = 20 / 4448IF = 100 LeakageVR = 20 = 20 V, TA = 150 C50mAVR = 75 Capacitance916/916A/916B/4448VR = 0, f = = 0, f = Recovery TimeIF = 10 mA, VR = V (600 mA)Irr = mA, RL = 100 parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical Characteristics if operated under different Non recurrent square wave PW = , 1N4x48, FDLL914, PERFORMANCE CHARACTERISTICS110120130140150160Ta = 2 5oC1 Reverse Voltage, V R [V]Reverse Current, IR [uA]Figure 1. Reverse Voltage vs. Reverse CurrentBV to 100 mA02040608010012010 20 30 50 70 100Ta= 25oCReverse Current, I R [nA]Reverse Voltage, VR [V]GENERAL RULE: The Reverse Current of a Diode will approximately double for every ten (10) Degree C increase in TemperatureFigure 2. Reverse Current vs. Reverse VoltageIR 10 to 100 V250300350400450500550Ta= 25oCForward Voltage, V R [mV]Forward Current, IF [uA]Figure 3.

5 Forward Voltage vs. Forward CurrentVF 1 to 100 25oCForward Voltage, V F [mV]Forward Current, IF [mA]Figure 4. Forward Voltage vs. Forward CurrentVF to 10 = 2 5oCForward Voltage, V F [mV]Forward Current, IF [mA]Figure 5. Forward Voltage vs. Forward CurrentVF 10 to 800 40oCTa = 2 5oCTa= +65oCForward Voltage, V F [mV]Forward Current, IF [mA]Figure 6. Forward Voltage vs. Ambient TemperatureVF - - 20 mA (- 40 to +65 C) , 1N4x48, FDLL914, PERFORMANCE = 25oCTotal Capacitance (pF)REVERSE VOLTAGE (V)Figure 7. Total = 25oCReverse Recovery Time, t rr [ns]Reverse Recovery Current, Irr [mA]IF = 10mA , IRR = mA , Rloop = 100 OhmsFigure 8. Reverse Recovery Time Recovery Current0501001500100200300400500IF(AV) Average Rectified Current mACurrent (mA)Ambient Temperature (oC)Figure 9.

6 Average Rectified Current (IF(AV))vs. Ambient Temperature (TA)Figure 10. Power Derating Curve0501002000100200300400500 Power Dissipation, PTemperature (oC)150[mW]DDO 35 and LL 34 / SOD 802468101214 AXIAL LEADCASE 017 AGISSUE ODATE 31 AUG = MIN (2X)T26 = MIN (2X) : UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE:JEDEC DO 204, VARIATION AH. B) HERMETICALLY SEALED GLASS PACKAGE. C) PACKAGE WEIGHT IS GRAM. D) ALL DIMENSIONS ARE IN CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

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