2N3906 General Purpose Transistors

1 Semiconductor Components Industries, LLC, 2010 February, 2010 Rev. 41 Publication Order Number: 2N3906 /D2N3906 General PurposeTransistorsPNP SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO40 VdcEmitter Base Current ContinuousIC200mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Power Dissipation @ TA = 60 CPD250mWTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (Note 1)

2 CharacteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device Indicates Data in addition to JEDEC Requirements.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, detailed ordering and shipping information in the packagedimensions section on page 3 of this data INFORMATIONMARKING DIAGRAM2N3906 ALYWGGA= Assembly LocationL= Wafer LotY= YearW= Work WeekG= Pb Free Package(Note.)

3 Microdot may be in either location)12312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 12N3906 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage (Note 2)(IC = mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO40 VdcEmitter Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR) VdcBase Cutoff Current(VCE = 30 Vdc, VEB = Vdc)IBL 50nAdcCollector Cutoff Current(VCE = 30 Vdc, VEB = Vdc)ICEX 50nAdcON CHARACTERISTICS (Note 2)DC Current Gain(IC = mAdc, VCE = Vdc)(IC = mAdc, VCE = Vdc)(IC = 10 mAdc, VCE = Vdc)(IC = 50 mAdc, VCE = Vdc)(IC = 100 mAdc, VCE = Vdc)hFE60801006030 300 Collector Emitter Saturation Voltage(IC = 10 mAdc, IB = mAdc)(IC = 50 mAdc, IB = mAdcVCE(sat) Emitter Saturation Voltage(IC = 10 mAdc, IB = mAdc)(IC = 50 mAdc, IB = mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)fT250 MHzOutput Capacitance(VCB = Vdc, IE = 0, f = MHz)Cobo Capacitance(VEB = Vdc, IC = 0, f = MHz)

4 Cibo 10pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz) Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz) 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)hfe100400 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz) Figure(IC = 100 mAdc, VCE = Vdc, RS = kW, f = kHz)NF CHARACTERISTICSD elay Time(VCC = Vdc, VBE = Vdc,IC = 10 mAdc, IB1 = mAdc)td 35nsRise Timetr 35nsStorage Time(VCC = Vdc, IC = 10 mAdc, IB1 = IB2 = mAdc)ts 225nsFall Time(VCC = Vdc, IC = 10 mAdc, IB1 = IB2 = mAdc)tf 75ns2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. 2N3906 INFORMATIOND evicePackageShipping 2N3906TO 925000 Units / Bulk2N3906 GTO 92(Pb Free)5000 Units / Bulk2N3906RL1TO 922000 / Tape & Reel2N3906RL1 GTO 92(Pb Free)2000 / Tape & Reel2N3906 RLRATO 922000 / Tape & Reel2N3906 RLRAGTO 92(Pb Free)2000 / Tape & Reel2N3906 RLRMTO 922000 / Tape & Ammo Box2N3906 RLRMGTO 92(Pb Free)2000 / Tape & Ammo Box2N3906 RLRPTO 922000 / Tape & Ammo Box2N3906 RLRPGTO 92(Pb Free)

5 2000 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 1. Delay and Rise Time Equivalent Test CircuitFigure 2. Storage and Fall Time Equivalent Test Circuit3 V27510 k1N916CS < 4 pF*3 V27510 kCS < 4 pF*< 1 ns+ V300 nsDUTY CYCLE = 2%< 1 ns+ VDUTY CYCLE = 2%t1010 < t1 < 500 ms* Total shunt capacitance of test jig and connectors* Total shunt capacitance of test jig and connectors2N3906 TRANSIENT CHARACTERISTICSF igure 3. CapacitanceREVERSE BIAS (VOLTS) 4.

6 Charge DataIC, COLLECTOR CURRENT (mA) = 40 VIC/IB = 10Q, CHARGE (pC) 10203050 70 100200 CAPACITANCE (pF) 102030 = 25 CTJ = 125 CFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020030050050 TIME (ns) 6. Fall TimeIC, COLLECTOR CURRENT (mA) , FALL TIME (ns)fVCC = 40 VIB1 = IB2IC/IB = 20IC/IB = 10IC/IB = 10tr @ VCC = Vtd @ VOB = 0 V40 V15 V2N3906 AUDIO SMALL SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(VCE = Vdc, TA = 25 C, Bandwidth = Hz)Figure 7. f, FREQUENCY (kHz) 8. Rg, SOURCE RESISTANCE (k OHMS)0NF, NOISE FIGURE (dB) , NOISE FIGURE (dB)f = kHzIC = mAIC = mAIC = 50 mAIC = 100 mASOURCE RESISTANCE = 200 WIC = mASOURCE RESISTANCE = 200 WIC = mASOURCE RESISTANCE = kIC = 100 mASOURCE RESISTANCE = kIC = 50 mAh PARAMETERS(VCE = 10 Vdc, f = kHz, TA = 25 C)Figure 9.

7 Current GainIC, COLLECTOR CURRENT (mA)7010020030050 Figure 10. Output AdmittanceIC, COLLECTOR CURRENT (mA)h , DC CURRENT GAINh , OUTPUT ADMITTANCE ( mhos)Figure 11. Input ImpedanceIC, COLLECTOR CURRENT (mA)Figure 12. Voltage Feedback RatioIC, COLLECTOR CURRENT (mA) , VOLTAGE FEEDBACK RATIO (X 10 )reh , INPUT IMPEDANCE (k OHMS) STATIC CHARACTERISTICSF igure 13. DC Current GainIC, COLLECTOR CURRENT (mA) , DC CURRENT GAIN (NORMALIZED) = VTJ = +125 C+25 C- 55 CFigure 14. Collector Saturation RegionIB, BASE CURRENT (mA) , COLLECTOR EMITTER VOLTAGE (VOLTS) = mATJ = 25 mA30 mA100 mAFigure 15.

8 ON VoltagesIC, COLLECTOR CURRENT (mA) 16. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)V, VOLTAGE (VOLTS) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = V+25 C TO +125 C- 55 C TO +25 C+25 C TO +125 C- 55 C TO +25 CqVC FOR VCE(sat)qVB FOR VBE(sat), TEMPERATURE COEFFICIENTS (mV/ C) VqTO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLES ON PAGE 2 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1:112312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3 NOTES:1.

9 DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 3TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLE 1:PIN 1.

10 EMITTER2. BASE3. COLLECTORSTYLE 6:PIN 1. GATE2. SOURCE & SUBSTRATE3. DRAINSTYLE 11:PIN 1. ANODE2. CATHODE & ANODE3. CATHODESTYLE 16:PIN 1. ANODE2. GATE3. CATHODESTYLE 21:PIN 1. COLLECTOR2. EMITTER3. BASESTYLE 26:PIN 1. VCC2. GROUND 23. OUTPUTSTYLE 31:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. SOURCE2. DRAIN3. GATESTYLE 12:PIN 1. MAIN TERMINAL 12. GATE3. MAIN TERMINAL 2 STYLE 17:PIN 1. COLLECTOR2. BASE3. EMITTERSTYLE 22:PIN 1. SOURCE2. GATE3. DRAINSTYLE 27:PIN 1.