2N5457 - General Purpose JFETs

1 2N5457 , 2N5458. JFETs - General Purpose N Channel Depletion N Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features N Channel for Higher Gain 1 DRAIN. Drain and Source Interchangeable High AC Input Impedance 3. High DC Input Resistance GATE. Low Transfer and Input Capacitance Low Cross Modulation and Intermodulation Distortion 2 SOURCE. Plastic Encapsulated Package Pb Free Packages are Available* MARKING. DIAGRAM. MAXIMUM RATINGS. 2N. Rating Symbol Value Unit 545x Drain Source Voltage VDS 25 Vdc AYWWG. G. Drain Gate Voltage VDG 25 Vdc 12 1. 2. 3 3. Reverse Gate Source Voltage VGSR 25 Vdc STRAIGHT LEAD BENT LEAD. Gate Current IG 10 mAdc BULK PACK TAPE & REEL TO 92. AMMO PACK CASE 29. Total Device Dissipation @ TA = 25 C PD 310 mW. STYLE 5. Derate above 25 C mW/ C.

2 Operating Junction Temperature TJ 135 C 2N545x = Device Code x = 7 or 8. Storage Temperature Range Tstg 65 to +150 C A = Assembly Location Stresses exceeding Maximum Ratings may damage the device. Maximum Y = Year Ratings are stress ratings only. Functional operation above the Recommended WW = Work Week Operating Conditions is not implied. Extended exposure to stresses above the G = Pb Free Package Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location). ORDERING INFORMATION. Device Package Shipping 2N5457 TO 92 1000 Units/Box 2N5457G TO 92 1000 Units/Box (Pb Free). 2N5458 TO 92 1000 Units/Box 2N5458G TO 92 1000 Units/Box (Pb Free). *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

3 Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: February, 2010 Rev. 6 2N5457 /D. 2N5457 , 2N5458. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS. Gate Source Breakdown Voltage V(BR)GSS. (IG = 10 mAdc, VDS = 0) 25 Vdc Gate Reverse Current IGSS. (VGS = 15 Vdc, VDS = 0) - nAdc (VGS = 15 Vdc, VDS = 0, TA = 100 C) 200. Gate Source Cutoff Voltage 2N5457 VGS(off) Vdc (VDS = 15 Vdc, iD = 10 nAdc) 2N5458 Gate Source Voltage VGS. (VDS = 15 Vdc, iD = 100 mAdc) 2N5457 Vdc (VDS = 15 Vdc, iD = 200 mAdc) 2N5458 . ON CHARACTERISTICS. Zero Gate Voltage Drain Current (Note 1) 2N5457 IDSS mAdc (VDS = 15 Vdc, VGS = 0) 2N5458 DYNAMIC CHARACTERISTICS. Forward Transfer Admittance (Note 1) 2N5457 |Yfs| 1000 3000 5000 mmhos (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458 1500 4000 5500.

4 Output Admittance Common Source (Note 1) |Yos|. (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 10 50 mmhos Input Capacitance Ciss (VDS = 15 Vdc, VGS = 0, f = 1 kHz) pF. Reverse Transfer Capacitance Crss (VDS = 15 Vdc, VGS = 0, f = 1 kHz) pF. 1. Pulse Width 630 ms, Duty Cycle 10%. 2. 2N5457 , 2N5458. TYPICAL CHARACTERISTICS. For 2N5457 Only 14. VDS = 15 V. 12. VGS = 0. NF, NOISE FIGURE (dB). f = 1 kHz 10. 8. 6. 4. 2. 0. 10. RS, SOURCE RESISTANCE (Megohms). Figure 1. Noise Figure versus Source Resistance VGS(off) ^ V VGS = 0 V VGS(off) ^ V. I D , DRAIN CURRENT (mA). I D , DRAIN CURRENT (mA). - V VDS = 15 V. - V. - V. - V - V. 0 0. 0 5 10 15 20 25 - - - 0. VDS, DRAIN - SOURCE VOLTAGE (VOLTS) VGS, GATE - SOURCE VOLTAGE (VOLTS). Figure 2. Typical Drain Characteristics Figure 3. Common Source Transfer Characteristics 3. 2N5457 , 2N5458.

5 TYPICAL CHARACTERISTICS. For 2N5457 Only 5 5. VGS = 0 V VGS(off) ^ - V. 4 4. I D , DRAIN CURRENT (mA). I D , DRAIN CURRENT (mA). VGS(off) ^ - V. 3 - 1 V 3. VDS = 15 V. 2 2. - 2 V. 1 1. - 3 V. 0 0. 0 5 10 15 20 25 - 5 - 4 - 3 - 2 - 1 0. VDS, DRAIN - SOURCE VOLTAGE (VOLTS) VGS, GATE - SOURCE VOLTAGE (VOLTS). Figure 4. Typical Drain Characteristics Figure 5. Common Source Transfer Characteristics 10 10. VGS(off) ^ - V. VGS = 0 V. 8 8. VGS(off) ^ - V. I D , DRAIN CURRENT (mA). I D , DRAIN CURRENT (mA). - 1 V. 6 6. VDS = 15 V. - 2 V. 4 4. - 3 V. 2 2. - 4 V. - 5 V. 0 0. 0 5 10 15 20 25 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0. VDS, DRAIN - SOURCE VOLTAGE (VOLTS) VGS, GATE - SOURCE VOLTAGE (VOLTS). Figure 6. Typical Drain Characteristics Figure 7. Common Source Transfer Characteristics NOTE: Note: Graphical data is presented for dc conditions.

6 Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. 4. 2N5457 , 2N5458. PACKAGE DIMENSIONS. TO 92 (TO 226). CASE 29 11. ISSUE AM. NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI. BULK PACK , 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R. R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND. P BEYOND DIMENSION K MINIMUM. L. SEATING INCHES MILLIMETERS. PLANE K DIM MIN MAX MIN MAX. A B C D X X D G H G J H J K --- --- L --- --- V C N P --- --- SECTION X X R --- --- 1 N V --- --- N TYLE 5: PIN 1. DRAIN. 2. SOURCE. 3. GATE. NOTES: A B BENT LEAD. R 1. DIMENSIONING AND TOLERANCING PER. TAPE & REEL ASME , 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3.

7 CONTOUR OF PACKAGE BEYOND. DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P. P AND BEYOND DIMENSION K MINIMUM. T. MILLIMETERS. SEATING. PLANE K DIM MIN MAX. A B C D X X D G J G K --- J N V P C R --- V --- SECTION X X. 1 N. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular Purpose , nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

8 All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

9 SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION. LITERATURE FULFILLMENT: N. American Technical Support: 800 282 9855 Toll Free ON Semiconductor Website: Literature Distribution Center for ON Semiconductor USA/Canada Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: Phone: 303 675 2175 or 800 344 3860 Toll Free USA/Canada Phone: 421 33 790 2910. Fax: 303 675 2176 or 800 344 3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: Phone: 81 3 5773 3850 Sales Representative 2N5457 /D. 5.