BC846, BC847, BC848 General Purpose Transistors

1 Semiconductor Components Industries, LLC, 2015 April, 2015 Rev. 121 Publication Order Number: bc846 AWT1/DBC846, bc847 , BC848 General PurposeTransistorsNPN SiliconThese Transistors are designed for General Purpose amplifierapplications. They are housed in the SC 70/SOT 323 which isdesigned for low power surface mount S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSR atingSymbolValueUnitCollector-Emitter VoltageBC846BC847BC848 VCEO654530 VCollector-Base VoltageBC846BC847BC848 VCBO805030 VEmitter-Base Current ContinuousIC100mAdcStresses exceeding those listed in the Maximum Ratings table may damagethe device.

2 If any of these limits are exceeded, device functionality should notbe assumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board,(Note 1) TA = 25 CPD200mWThermal Resistance,Junction to AmbientRqJA620 C/WJunction and Storage TemperatureTJ, Tstg 55 to+150 C1. FR 5 = x x 70/SOT 323 CASE 419 STYLE 3 MARKING DIAGRAMXX= Specific Device CodeM= Month CodeG= Pb Free Package(Note: Microdot may be in either location)XX MGGCOLLECTOR31 BASE2 EMITTER123 See detailed ordering, marking and shipping information in thepackage dimensions section on page 12 of this data INFORMATIONBC846, bc847 , CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSC ollector Emitter Breakdown VoltageBC846 Series(IC = 10 mA) bc847 SeriesBC848 SeriesV(BR)CEO654530 VCollector Emitter Breakdown VoltageBC846 Series(IC = 10 mA, VEB = 0) bc847 SeriesBC848 SeriesV(BR)

3 CES805030 VCollector Base Breakdown VoltageBC846 Series(IC = 10 mA) bc847 SeriesBC848 SeriesV(BR)CBO805030 VEmitter Base Breakdown VoltageBC846 Series(IE = mA) bc847 SeriesBC848 SeriesV(BR) VCollector Cutoff Current (VCB = 30 V)(VCB = 30 V, TA = 150 C)ICBO CHARACTERISTICSDC Current GainBC846A, BC847A, BC848A(IC = 10 mA, VCE = V)BC846B, BC847B, BC848 BBC847C, BC848C(IC = mA, VCE = V)BC846A, BC847A, BC848 ABC846B, BC847B, BC848 BBC847C, BC848 ChFE 11020042090150270180290520 220450800 Collector Emitter Saturation Voltage (IC = 10 mA, IB = mA)Base Emitter Saturation Voltage (IC = 100 mA, IB = mA)VCE(sat) Emitter Saturation Voltage (IC = 10 mA, IB = mA)Base Emitter Saturation Voltage (IC = 100 mA, IB = mA)VBE(sat) VBase Emitter Voltage (IC = mA, VCE = V)Base Emitter Voltage (IC = 10 mA, VCE = V)VBE(on)580 660 700770mVSMALL SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 10 mA, VCE = Vdc, f = 100 MHz)fT100 MHzOutput Capacitance (VCB = 10 V, f = MHz)Cobo Figure (IC = mA, VCE = Vdc, RS = kW, f = kHz, BW = 200 Hz)NF 10dBBC846, bc847 , , BC847A, BC848 AFigure 1.

4 DC Current Gain vs. CollectorCurrentFigure 2. DC Current Gain vs. CollectorCurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 3. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 4. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) , DC CURRENT GAINVCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V)1 VCE = 1 V150 C 55 C25 CIC/IB = 20150 C 55 C25 = 20150 C 55 C25 = 5 V150 C 55 C25 5. Base Emitter Voltage vs. CollectorCurrentIC, COLLECTOR CURRENT (A) , DC CURRENT GAIN1 VCE = 5 V150 C 55 C25 CBC846, bc847 , , BC847A, BC848 AFigure 6.

5 Collector Saturation RegionIB, BASE CURRENT (mA)Figure 7. Base Emitter Temperature CoefficientIC, COLLECTOR CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (V)VB, TEMPERATURE COEFFICIENT (mV/ C) C to +125 CTA = 25 CIC = 50 mAIC = 100 mAIC = 200 mAIC =20 mAIC =10 8. CapacitancesVR, REVERSE VOLTAGE (VOLTS)10 Figure 9. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mAdc) = 10 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) = 25 CCobCibBC846, bc847 , 10. DC Current Gain vs. CollectorCurrentFigure 11. DC Current Gain vs. CollectorCurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 12.

6 Collector Emitter Saturation Voltagevs. Collector CurrentFigure 13. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) , DC CURRENT GAINVCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V)1 VCE = 1 V150 C 55 C25 CIC/IB = 20150 C 55 C25 = 20150 C 55 C25 = 5 V150 C 55 C25 14. Base Emitter Voltage vs. CollectorCurrentIC, COLLECTOR CURRENT (A) , DC CURRENT GAIN1 VCE = 5 V150 C 55 C25 C500BC846, bc847 , 15. Collector Saturation RegionIB, BASE CURRENT (mA)Figure 16. Base Emitter Temperature CoefficientIC, COLLECTOR CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (VOLTS)VB, TEMPERATURE COEFFICIENT (mV/ C) = 25 C200 mA50 mAIC =10 mA20 C to 125 CqVB for VBEF igure 17.

7 CapacitanceVR, REVERSE VOLTAGE (VOLTS)40 Figure 18. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA) = 5 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH = 25 CCobCibBC846, bc847 , , BC848 BFigure 19. DC Current Gain vs. CollectorCurrentFigure 20. DC Current Gain vs. CollectorCurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 21. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 22. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) , DC CURRENT GAINVCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V)1 VCE = 1 V150 C 55 C25 CIC/IB = 20150 C 55 C25 = 20150 C 55 C25 = 5 V150 C 55 C25 23.

8 Base Emitter Voltage vs. , DC CURRENT GAIN1 VCE = 5 V150 C 55 C25 C300400500IC, COLLECTOR CURRENT (A) bc846 , bc847 , , BC848 BFigure 24. Collector Saturation RegionIB, BASE CURRENT (mA)Figure 25. Base Emitter TemperatureCoefficientIC, COLLECTOR CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (V)VB, TEMPERATURE COEFFICIENT (mV/ C) C to +125 CTA = 25 CIC = 50 mAIC = 100 mAIC = 200 mAIC =20 mAIC =10 26. CapacitancesVR, REVERSE VOLTAGE (VOLTS)10 Figure 27. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mAdc) = 10 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) = 25 CCobCibBC846, bc847 , , BC848 CFigure 28.

9 DC Current Gain vs. CollectorCurrentFigure 29. DC Current Gain vs. CollectorCurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 30. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 31. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) , DC CURRENT GAINVCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V)1 VCE = 1 V150 C 55 C25 CIC/IB = 20150 C 55 C25 = 20150 C 55 C25 = 5 V150 C 55 C25 32. Base Emitter Voltage vs. CollectorCurrentIC, COLLECTOR CURRENT (A) , DC CURRENT GAIN1 VCE = 5 V150 C 55 C25 C300400500600700800900BC846, bc847 , , BC848 CFigure 33.

10 Collector Saturation RegionIB, BASE CURRENT (mA)Figure 34. Base Emitter TemperatureCoefficientIC, COLLECTOR CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (V)VB, TEMPERATURE COEFFICIENT (mV/ C) C to +125 CTA = 25 CIC = 50 mAIC = 100 mAIC = 200 mAIC =20 mAIC =10 35. CapacitancesVR, REVERSE VOLTAGE (VOLTS)10 Figure 36. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mAdc) = 10 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) = 25 CCobCibBC846, bc847 , mSThermal Limit1 SFigure 37. Safe Operating Area forBC846A, bc846 BFigure 38. Safe Operating Area forBC847A, BC847B, bc847 CVCE, COLLECTOR EMITTER VOLTAGE (V)VCE, COLLECTOR EMITTER VOLTAGE (V) 39.