BC846BDW1T1 - Dual General Purpose Transistors

1 BC846 BDW1, BC847 BDW1, BC848 CDW1. dual General Purpose Transistors NPN Duals These Transistors are designed for General Purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. Features SOT 363/SC 88. S and NSV Prefixes for Automotive and Other Applications CASE 419B. STYLE 1. Requiring Unique Site and Control Change Requirements;. AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS (3) (2) (1). Compliant*. Q1 Q2. MAXIMUM RATINGS. Rating Symbol BC846 BC847 BC848 Unit (4) (5) (6). Collector Emitter Voltage VCEO 65 45 30 V. Collector Base Voltage VCBO 80 50 30 V. MARKING DIAGRAM. Emitter Base Voltage VEBO V. Collector Current IC 100 100 100 mAdc 6. Continuous 1x MG. Stresses exceeding those listed in the Maximum Ratings table may damage the G. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

2 1. THERMAL CHARACTERISTICS. 1x = Specific Device Code Characteristic Symbol Max Unit x = B, F, G, L. M = Date Code Total Device Dissipation PD 380 mW G = Pb Free Package Per Device 250 mW. FR 5 Board (Note 1) (Note: Microdot may be in either location). TA = 25 C. Derate Above 25 C mW/ C. ORDERING INFORMATION. Thermal Resistance, RqJA C/W See detailed ordering and shipping information in the package Junction to Ambient 328 dimensions section on page 6 of this data sheet. Junction and Storage Temperature TJ, Tstg 55 to +150 C. Range 1. FR 5 = x x in *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2016 Rev. 11 BC846 BDW1T1/D. BC846 BDW1, BC847 BDW1, BC848 CDW1. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS.

3 Collector Emitter Breakdown Voltage V(BR)CEO V. (IC = 10 mA). BC846 65 . BC847 45 . BC848 30 . Collector Emitter Breakdown Voltage V(BR)CES V. (IC = 10 mA, VEB = 0). BC846 80 . BC847 50 . BC848 30 . Collector Base Breakdown Voltage V(BR)CBO V. (IC = 10 mA). BC846 80 . BC847 50 . BC848 30 . Emitter Base Breakdown Voltage V(BR)EBO V. (IE = mA). BC846 . BC847 . BC848 . Collector Cutoff Current ICBO. (VCB = 30 V) 15 nA. (VCB = 30 V, TA = 150 C) mA. ON CHARACTERISTICS. DC Current Gain hFE . (IC = 10 mA, VCE = V). BC846B, BC847B 150 . BC847C, BC848C 270 . (IC = mA, VCE = V). BC846B, BC847B 200 290 450. BC847C, BC848C 420 520 800. Collector Emitter Saturation Voltage VCE(sat) V. (IC = 10 mA, IB = mA) (IC = 100 mA, IB = mA) Base Emitter Saturation Voltage VBE(sat) V. (IC = 10 mA, IB = mA) . (IC = 100 mA, IB = mA) . Base Emitter Voltage VBE(on) mV. (IC = mA, VCE = V) 580 660 700. (IC = 10 mA, VCE = V) 770. SMALL SIGNAL CHARACTERISTICS. Current Gain Bandwidth Product fT MHz (IC = 10 mA, VCE = Vdc, f = 100 MHz) 100.

4 Output Capacitance Cobo pF. (VCB = 10 V, f = MHz) Noise Figure NF dB. (IC = mA, VCE = Vdc, RS = kW,f = kHz, BW = 200 Hz) 10. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC846 BDW1. 600 600. VCE = 5 V VCE = 10 V. 500 500. hFE, DC CURRENT GAIN. hFE, DC CURRENT GAIN. 150 C. 150 C. 400 400. 25 C 25 C. 300 300. 200 200. 55 C 55 C. 100 100. 0 0. 1 1. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V. VCE(sat), COLL EMITT SATURATION VOLTAGE (V). VCE(sat), COLL EMITT SATURATION VOLTAGE (V). IC/IB = 10. IC/IB = 20. 150 C. 25 C 150 C. 25 C 55 C 55 C. 0. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 3. VCE(sat) at IC/IB = 10 Figure 4.

5 VCE(sat) at IC/IB = 20. VBE(sat), BASE EMITT SATURATION VOLTAGE (V). VBE(sat), BASE EMITT SATURATION VOLTAGE (V). IC/IB = 10 IC/IB = 20. 55 C 55 C. 25 C 25 C. 150 C 150 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 5. VBE(sat) at IC/IB = 10 Figure 6. VBE(sat) at IC/IB = 20. 3. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC846 BDW1. 1000. VCE = 5 V VCE = 10 V. fT, CURRENT GAIN BANDWIDTH. VBE(on), BASE EMITTER VOLTAGE. TA = 25 C. 55 C. PRODUCT. 25 C. (V). 100. 150 C. 10. 1 10 100. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA). Figure 7. VBE(on) at VCE = 5 V Figure 8. Current Gain Bandwidth Product 10 2. VCE, COLLECTOR EMITTER VOLT- TA = 25 C. TA = 25 C. Cib IC =. C, CAPACITANCE (pF). IC = IC = IC =. 10 mA 50 mA 100 mA. 20 mA. AGE (V). Cob 1 0. 1 10 100 1 10 100. VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA). Figure 9. Capacitances Figure 10. Collector Saturation Region VCE = 5 V. qVB, TEMPERATURE COEFFICIENT. 1. (mV/ C). qVB, for VBE. 55 C to 150 C.

6 3. 1 10 100. IB, BASE CURRENT (mA). Figure 11. Base Emitter Temperature Coefficient 4. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC847 BDW1. 600 600. VCE = 5 V VCE = 10 V. 150 C 150 C. 500 500. hFE, DC CURRENT GAIN. hFE, DC CURRENT GAIN. 400 400. 25 C 25 C. 300 300. 200 55 C 200 55 C. 100 100. 0 0. 1 1. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 12. DC Current Gain at VCE = 5 V Figure 13. DC Current Gain at VCE = 10 V. VCE(sat), COLL EMITT SATURATION VOLTAGE (V). VCE(sat), COLL EMITT SATURATION VOLTAGE (V). IC/IB = 10 IC/IB = 20. 25 C 150 C. 25 C 150 C. 55 C. 55 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 14. VCE at IC/IB = 10 Figure 15. VCE at IC/IB = 20. VBE(sat), BASE EMITT SATURATION VOLTAGE (V). VBE(sat), BASE EMITT SATURATION VOLTAGE (V). IC/IB = 10 IC/IB = 20. 55 C 55 C. 25 C 25 C. 150 C. 150 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 16. VBE(sat) at IC/IB = 10 Figure 17. VBE(sat) at IC/IB = 20.

7 5. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC847 BDW1. 1000. VCE = 5 V VCE = 10 V. fT, CURRENT GAIN BANDWIDTH. VBE(on), BASE EMITTER VOLTAGE. TA = 25 C. 55 C. PRODUCT. (V). 25 C 100. 150 C. 10. 1 10 100. IC, COLLECTOR CURRENT (A). IC, COLLECTOR CURRENT (mA). Figure 18. VBE(on) at VCE = 5 V. Figure 19. Current Gain Bandwidth Product 10 2. TA = 25 C TA = 25 C. VCE, COLLECTOR EMITTER VOLT- Cib IC = IC =. C, CAPACITANCE (pF). 10 mA 100 mA. IC = IC =. 20 mA 50 mA. AGE (V). Cob 1 0. 1 10 100 1 10 100. VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA). Figure 20. Capacitances Figure 21. Collector Saturation Region VCE = 5 V. qVB, TEMPERATURE COEFFICIENT. 1. (mV/ C). qVB, for VBE. 55 C to 150 C. 3. 1 10 100. IB, BASE CURRENT (mA). Figure 22. Base Emitter Temperature Coefficient 6. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC848 CDW1. 1000 1000. VCE = 5 V 150 C VCE = 10 V. 900 150 C 900. 800 800. hFE, DC CURRENT GAIN. hFE, DC CURRENT GAIN. 700 700. 600 25 C 600 25 C.

8 500 500. 400 400. 55 C 55 C. 300 300. 200 200. 100 100. 0 0. 1 1. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V. VCE(sat), COLL EMITT SATURATION VOLTAGE (V). VCE(sat), COLL EMITT SATURATION VOLTAGE (V). IC/IB = 10 IC/IB = 20. 150 C. 150 C. 25 C 25 C. 55 C. 55 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 25. VCE at IC/IB = 10 Figure 26. VCE at IC/IB = 20. VBE(sat), BASE EMITT SATURATION VOLTAGE (V). VBE(sat), BASE EMITT SATURATION VOLTAGE (V). IC/IB = 10 IC/IB = 20. 55 C 55 C. 25 C 25 C. 150 C. 150 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 27. VBE(sat) at IC/IB = 10 Figure 28. VBE(sat) at IC/IB = 20. 7. BC846 BDW1, BC847 BDW1, BC848 CDW1. TYPICAL CHARACTERISTICS BC848 CDW1. 1000. VCE = 5 V VCE = 10 V. fT, CURRENT GAIN BANDWIDTH. VBE(on), BASE EMITTER VOLTAGE. TA = 25 C. 55 C. 25 C. PRODUCT. (V). 100. 150 C. 10. 1 10 100. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA).

9 Figure 29. VBE(on) at VCE = 5 V Figure 30. Current Gain Bandwidth Product 10 2. TA = 25 C TA = 25 C. VCE, COLLECTOR EMITTER VOLT- IC = IC =. 10 mA 20 mA. Cib C, CAPACITANCE (pF). IC =. AGE (V). 50 mA. Cob IC =. 100 mA. 1 0. 1 10 100 1 10 100. VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA). Figure 31. Capacitances Figure 32. Collector Saturation Region VCE = 5 V. qVB, TEMPERATURE COEFFICIENT. 1. (mV/ C). qVB, for VBE. 55 C to 150 C. 3. 1 10 100. IB, BASE CURRENT (mA). Figure 33. Base Emitter Temperature Coefficient 8. BC846 BDW1, BC847 BDW1, BC848 CDW1. D = RESISTANCE (NORMALIZED). r(t), TRANSIENT THERMAL. ZqJA(t) = r(t) RqJA. P(pk) RqJA = 3285C/W MAX. D CURVES APPLY FOR POWER. PULSE TRAIN SHOWN. READ TIME AT t1. t1 TJ(pk) TC = P(pk) RqJC(t). t2. DUTY CYCLE, D = t1/t2. SINGLE PULSE. 0 10 100 k 10 k 100 k M. t, TIME (ms). Figure 34. Thermal Response -200 The safe operating area curves indicate IC VCE limits 1s 3 ms of the transistor that must be observed for reliable IC, COLLECTOR CURRENT (mA).

10 -100. operation. Collector load lines for specific circuits must -50 TA = 25 C TJ = 25 C fall below the limits indicated by the applicable curve. The data of Figure 35 is based upon TJ(pk) = 150 C; TC. or TA is variable depending upon conditions. Pulse BC558 curves are valid for duty cycles to 10% provided TJ(pk) . -10. BC557 150 C. T J(pk) may be calculated from the data in BC556 Figure 34. At high case or ambient temperatures, BONDING WIRE LIMIT thermal limitations will reduce the power that can be THERMAL LIMIT handled to values less than the limitations imposed by the SECOND BREAKDOWN LIMIT secondary breakdown. -10 -30 -45 -65 -100. VCE, COLLECTOR-EMITTER VOLTAGE (V). Figure 35. Active Region Safe Operating Area 9. BC846 BDW1, BC847 BDW1, BC848 CDW1. ORDERING INFORMATION. Device Markings Package Shipping . BC846 BDW1T1G 1B SOT 363 3,000 / Tape & Reel (Pb Free). SBC846 BDW1T1G* 1B SOT 363 3,000 / Tape & Reel (Pb Free). BC847 BDW1T1G 1F SOT 363 3,000 / Tape & Reel (Pb Free).