BC846BPDW1, BC848CPDW1 Series Dual General Purpose …

1 BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series dual General Purpose Transistors NPN/PNP Duals (Complementary). These transistors are designed for General Purpose amplifier applications. They are housed in the SOT 363/SC 88 which is SOT 363. designed for low power surface mount applications. CASE 419B. STYLE 1. Features S Prefix for Automotive and Other Applications Requiring Unique (3) (2) (1). Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable Q1 Q2. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS. Compliant (4) (5) (6). MAXIMUM RATINGS NPN. MARKING DIAGRAM. Rating Symbol Value Unit Collector-Emitter Voltage VCEO V 6. BC846, SBC846 65. BC847, SBC847 45 XX MG. BC848 30 G. Collector-Base Voltage VCBO V 1. BC846, SBC846 80. BC847, SBC847 50 XX = Device Code BC848 30. M = Date Code Emitter Base Voltage VEBO V G = Pb Free Package Collector Current Continuous IC 100 mAdc (Note: Microdot may be in either location).

2 Collector Current Peak ICM 200 mAdc ORDERING INFORMATION. MAXIMUM RATINGS PNP. Device Mark Package Shipping . Rating Symbol Value Unit BC846 BPDW1T1G, BB SOT 363 3,000 /. Collector-Emitter Voltage VCEO V SBC846 BPDW1T1G (Pb Free) Tape & Reel BC846, SBC846 65. BC847, SBC847 45 SBC846 BPDW1T2G BB SOT 363 3,000 /. BC848 30 (Pb Free) Tape & Reel Collector-Base Voltage VCBO V BC847 BPDW1T1G BF SOT 363 3,000 /. BC846, SBC846 80 (Pb Free) Tape & Reel BC847, SBC847 50 SBC847 BPDW1T1G BF SOT 363 3,000 /. BC848 30 (Pb Free) Tape & Reel Emitter Base Voltage VEBO V SBC847 BPDW1T3G BF SOT 363 10,000 /. Collector Current Continuous IC 100 mAdc (Pb Free) Tape & Reel Collector Current Peak ICM 200 mAdc BC847 BPDW1T2G BF SOT 363 3,000 /. (Pb Free) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BC848 CPDW1T1G BL SOT 363 3,000 /.

3 Assumed, damage may occur and reliability may be affected. (Pb Free) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 12 BC846 BPDW1T1/D. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series THERMAL CHARACTERISTICS. Characteristic Symbol Max Unit Total Device Dissipation Per Device PD. FR 5 Board (Note 1) 380 mW. TA = 25 C 250 mW/ C. Derate above 25 C mW/ C. Thermal Resistance, Junction to Ambient RqJA 328 C/W. Junction and Storage Temperature TJ, Tstg 55 to +150 C. 1. FR 5 = x x in. ELECTRICAL CHARACTERISTICS (NPN) (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS. Collector Emitter Breakdown Voltage V(BR)CEO V. (IC = 10 mA).

4 BC846, SBC846 Series 65 . BC847, SBC847 Series 45 . BC848 Series 30 . Collector Emitter Breakdown Voltage V(BR)CES V. (IC = 10 mA, VEB = 0). BC846, SBC846 Series 80 . BC847B, SBC847B Only 50 . BC848 Series 30 . Collector Base Breakdown Voltage V(BR)CBO V. (IC = 10 mA). BC846, SBC846 Series 80 . BC847, SBC847 Series 50 . BC848 Series 30 . Emitter Base Breakdown Voltage V(BR)EBO V. (IE = mA). BC846, SBC846 Series . BC847, SBC847 Series . BC848 Series . Collector Cutoff Current ICBO. (VCB = 30 V) 15 nA. (VCB = 30 V, TA = 150 C) mA. ON CHARACTERISTICS. DC Current Gain hFE . (IC = 10 mA, VCE = V). BC846B, SBC846B, BC847B, SBC847B 150 . BC848C 270 . (IC = mA, VCE = V). BC846B, SBC846B, BC847B, SBC84B7 200 290 475. BC848C 420 520 800. Collector Emitter Saturation Voltage VCE(sat) V. (IC = 10 mA, IB = mA) All devices except SBC847 BPDW1T1G SBC847 BPDW1T1G only (IC = 100 mA, IB = mA) All devices (IC = 2 mA, IB = mA) SBC847 BPDW1T1G only.

5 Base Emitter Saturation Voltage VBE(sat) V. (IC = 10 mA, IB = mA) . (IC = 100 mA, IB = mA) . Base Emitter Voltage VBE(on) mV. (IC = mA, VCE = V) 580 660 700. (IC = 10 mA, VCE = V) 770. SMALL SIGNAL CHARACTERISTICS. Current Gain Bandwidth Product fT MHz (IC = 10 mA, VCE = Vdc, f = 100 MHz) 100 . Output Capacitance (VCB = 10 V, f = MHz) Cobo pF. Noise Figure NF dB. (IC = mA, VCE = Vdc, RS = kW, f = kHz, BW = 200 Hz) 10. 2. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series ELECTRICAL CHARACTERISTICS (PNP) (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS. Collector Emitter Breakdown Voltage V(BR)CEO V. (IC = 10 mA). BC846, SBC846 Series 65 . BC847, SBC847 Series 45 . BC848 Series 30 . Collector Emitter Breakdown Voltage V(BR)CES V. (IC = 10 mA, VEB = 0). BC846, SBC846 Series 80 . BC847, SBC847 Series 50 . BC848 Series 30 . Collector Base Breakdown Voltage V(BR)CBO V.

6 (IC = 10 mA). BC846, SBC846 Series 80 . BC847, SBC847 Series 50 . BC848 Series 30 . Emitter Base Breakdown Voltage V(BR)EBO V. (IE = mA). BC846, SBC846 Series . BC847, SBC847 Series . BC848 Series . Collector Cutoff Current ICBO. (VCB = 30 V) 15 nA. (VCB = 30 V, TA = 150 C) mA. ON CHARACTERISTICS. DC Current Gain hFE . (IC = 10 mA, VCE = V). BC846B, SBC846B, BC847B, SBC847B 150 . BC848C 270 . (IC = mA, VCE = V). BC846B, SBC846B, BC847B, SBC847B 200 290 475. BC848C 420 520 800. Collector Emitter Saturation Voltage VCE(sat) V. (IC = 10 mA, IB = mA) All devices except SBC847 BPDW1T1G SBC847 BPDW1T1G only (IC = 100 mA, IB = mA) All devices (IC = 2 mA, IB = mA) SBC847 BPDW1T1G only . Base Emitter Saturation Voltage VBE(sat) V. (IC = 10 mA, IB = mA) . (IC = 100 mA, IB = mA) . Base Emitter On Voltage VBE(on) V. (IC = mA, VCE = V) (IC = 10 mA, VCE = V) SMALL SIGNAL CHARACTERISTICS.

7 Current Gain Bandwidth Product fT MHz (IC = 10 mA, VCE = Vdc, f = 100 MHz) 100 . Output Capacitance Cob pF. (VCB = 10 V, f = MHz) Noise Figure NF dB. (IC = mA, VCE = Vdc, RS = kW, f = kHz, BW = 200 Hz) 10. 3. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series TYPICAL NPN CHARACTERISTICS BC846/SBC846. 500 150 C VCE = 5 V IC/IB = 20. VCE(sat), COLLECTOR EMITTER. SATURATION VOLTAGE (V). 400. hFE, DC CURRENT GAIN. 300 25 C. 200. 55 C 150 C. 25 C. 100. 55 C. 0 0. 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage Current vs. Collector Current VBE(on), BASE EMITTER VOLTAGE (V). IC/IB = 20 VCE = 5 V. SATURATION VOLTAGE (V). VBE(sat), BASE EMITTER. 55 C. 55 C 25 C. 25 C 150 C. 150 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Voltage vs.

8 Collector Collector Current Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS). VB, TEMPERATURE COEFFICIENT (mV/ C). TA = 25 C. 20 mA 50 mA 100 mA 200 mA. qVB for VBE. IC = -55 C to 125 C. 10 mA. 0 10 20 10 20 50 100 200. IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA). Figure 5. Collector Saturation Region Figure 6. Base Emitter Temperature Coefficient 4. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series TYPICAL NPN CHARACTERISTICS BC846/SBC846. 40. T CURRENT-GAIN - BANDWIDTH PRODUCT. TA = 25 C VCE = 5 V. 500 TA = 25 C. 20. C, CAPACITANCE (pF). Cib 200. 10. 100. 50. Cob 20. f , 10 20 50 100 10 50 100. VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA). Figure 7. Capacitance Figure 8. Current Gain Bandwidth Product 5. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series TYPICAL PNP CHARACTERISTICS BC846/SBC846. 500 150 C VCE = 5 V IC/IB = 20. VCE(sat), COLLECTOR EMITTER. SATURATION VOLTAGE (V).

9 400. hFE, DC CURRENT GAIN. 150 C. 25 C 300 25 C. 200 55 C. 55 C. 100. 0 0. 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 9. DC Current Gain vs. Collector Figure 10. Collector Emitter Saturation Voltage Current vs. Collector Current VBE(on), BASE EMITTER VOLTAGE (V). 55 C. IC/IB = 20 VCE = 5 V. SATURATION VOLTAGE (V). VBE(sat), BASE EMITTER. 25 C. 55 C. 25 C. 150 C 150 C. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 11. Base Emitter Saturation Voltage vs. Figure 12. Base Emitter Voltage vs. Collector Collector Current Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS). VB, TEMPERATURE COEFFICIENT (mV/ C). IC = -20 mA -50 mA -100 mA -200 mA. -10 mA qVB for VBE. -55 C to 125 C. TJ = 25 C. 0 -10 -20 -10 -20 -50 -100 -200. IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA). Figure 13. Collector Saturation Region Figure 14. Base Emitter Temperature Coefficient 6.

10 BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series TYPICAL PNP CHARACTERISTICS BC846/SBC846. 40. T CURRENT-GAIN - BANDWIDTH PRODUCT. VCE = V. TJ = 25 C 500. 20 Cib C, CAPACITANCE (pF). 200. 10 100. 50. Cob 20. f , -10 -20 -50 -100 -10 -100. VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA). Figure 15. Capacitance Figure 16. Current Gain Bandwidth Product 7. BC846 BPDW1, BC847 BPDW1, BC848 CPDW1 Series TYPICAL NPN CHARACTERISTICS BC847/SBC847 Series . 500 150 C VCE = 5 V IC/IB = 20. VCE(sat), COLLECTOR EMITTER. SATURATION VOLTAGE (V). 400. hFE, DC CURRENT GAIN. 150 C. 300 25 C. 25 C. 200 55 C. 55 C. 100. 0 0. 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 17. DC Current Gain vs. Collector Figure 18. Collector Emitter Saturation Voltage Current vs. Collector Current VBE(on), BASE EMITTER VOLTAGE (V). IC/IB = 20 55 C VCE = 5 V. SATURATION VOLTAGE (V). VBE(sat), BASE EMITTER.