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CHAPTER 1 OUTLINE - ce L
high isolation voltage single transistor type multi photocoupler series nepoc series photocoupler ps2561-1,ps2561l-1,ps2561l1-1,ps2561l2-1
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NE3513M04 Data Sheet - ce L
www.cel.comR09DS0028EJ0100 Rev.1.00 Page 1 of 8 Oct 18, 2011 NE3513M04 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain:
NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 …
www.cel.com2 Data Sheet PU10211EJ01V0DS NE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth (j-a) Note 62.5 °C/W Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
CHAPTER 1 OUTLINE - ce L
www.cel.comData Sheet PN10253EJ03V0DS6 PS2805-1,PS2805-4 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C) 25 50 75 100 PS2805-4 …
PHOTOCOUPLER PS2533-1,PS2533L-1 - CEL
www.cel.comData Sheet PN10233EJ03V0DS 3 PS2533-1,PS2533L-1 MARKING EXAMPLE 2533 NJ931 J Assembly Lot Week Assembled Year Assembled (Last 1 …
NPN SILICON RF TRANSISTOR NE856 SERIES - ce L
www.cel.comnec's npn silicon high frequency transistor npn silicon rf transistor ne856 series features • high gain bandwidth product: ft = 7 ghz • low noise figure: 1.1 db at 1 ghz • high collector current: 100 ma
Reference Tables
www.cel.com10.16 mm 10.16 mm 7.62 mm 9.60 mm 6.5 mm 10.05 ±0.4 mm 9.65±0.4 mm L L1 L2 L3 L4 6.5 mm+0.5 - 0.1 +0.5 - 0.1 Part Numbering System Options 23 25 27 28 29 81 83
CHAPTER 1 OUTLINE - ce L
www.cel.comPS2501-1,-4,PS2501L-1,-4 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C) 150 100 50 0255075100 125 150 1.5 mW/°C 1.2 mW/° C 150 100 0 …
NEC XXXXXXXXXX - ce L
www.cel.comLNBs for 12 to 20GHz Applications 4 ^^^ JLS JVT YM 3 WiMAX Transceiver RFIC & Transistor LNAs Low Loss Pre-Filter RFIC LNA High Rejection Post-Filter RFIC Switches
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www.cel.comCaution: Observe precautions when handling because these devices are sensitive to electrostatic discharge HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER
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