CHAPTER 1 OUTLINE - ce L
high isolation voltage single transistor type multi photocoupler series nepoc series photocoupler ps2561-1,ps2561l-1,ps2561l1-1,ps2561l2-1
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CHAPTER 1 OUTLINE - ce L
www.cel.comPS2501-1,-4,PS2501L-1,-4 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C) 150 100 50 0255075100 125 150 1.5 mW/°C 1.2 mW/° C 150 100 0 …
CHAPTER 1 OUTLINE - ce L
www.cel.comData Sheet PN10253EJ03V0DS6 PS2805-1,PS2805-4 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C) 25 50 75 100 PS2805-4 …
NPN SILICON RF TRANSISTOR NE856 SERIES - ce L
www.cel.comnec's npn silicon high frequency transistor npn silicon rf transistor ne856 series features • high gain bandwidth product: ft = 7 ghz • low noise figure: 1.1 db at 1 ghz • high collector current: 100 ma
Series, Silicon, Transistor, Npn silicon, Npn silicon rf transistor ne856 series, Ne856
Reference Tables
www.cel.com10.16 mm 10.16 mm 7.62 mm 9.60 mm 6.5 mm 10.05 ±0.4 mm 9.65±0.4 mm L L1 L2 L3 L4 6.5 mm+0.5 - 0.1 +0.5 - 0.1 Part Numbering System Options 23 25 27 28 29 81 83
NE3513M04 Data Sheet - ce L
www.cel.comR09DS0028EJ0100 Rev.1.00 Page 1 of 8 Oct 18, 2011 NE3513M04 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain:
NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 …
www.cel.com2 Data Sheet PU10211EJ01V0DS NE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth (j-a) Note 62.5 °C/W Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
NEC XXXXXXXXXX - ce L
www.cel.comLNBs for 12 to 20GHz Applications 4 ^^^ JLS JVT YM 3 WiMAX Transceiver RFIC & Transistor LNAs Low Loss Pre-Filter RFIC LNA High Rejection Post-Filter RFIC Switches
HETERO JUNCTION FIELD EFFECT TRANSISTOR …
www.cel.comCaution: Observe precautions when handling because these devices are sensitive to electrostatic discharge HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER
Field, Transistor, Effect, Junction, Hetero junction field effect transistor, Hetero, Hetero junction field effect transistor ne3509m04, Ne3509m04
Image Signal Processor
www.cel.com16Mega Pixel Image Signal Processor THP7312 OV13850-13MP Camera Module LED Board Image Sensor Board THine® ISP Board Cypress® CX3™ Board USB 3.0 Debug Port Interface Overview
PHOTOCOUPLER PS2533-1,PS2533L-1 - CEL
www.cel.comData Sheet PN10233EJ03V0DS 3 PS2533-1,PS2533L-1 MARKING EXAMPLE 2533 NJ931 J Assembly Lot Week Assembled Year Assembled (Last 1 …
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CHAPTER 1 OUTLINE - ce L
www.cel.comData Sheet PN10253EJ03V0DS 5 PS2805-1,PS2805-4 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF IF = ±5 mA 1.1 1.4 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 30 pF Transistor Collector to Emitter Dark
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