D44H - Complementary Silicon Power Transistors

1 Semiconductor Components Industries, LLC, 2014 November, 2014 Rev. 131 Publication Order Number:D44H/DD44H series (NPN),D45H series (PNP) Complementary SiliconPower TransistorsThese series of plastic, Silicon NPN and PNP Power Transistors canbe used as general purpose Power amplification and switching such asoutput or driver stages in applications such as switching regulators,converters and Power Low Collector Emitter Saturation Voltage Fast Switching Speeds Complementary Pairs Simplifies Designs These Devices are Pb Free and are RoHS Compliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageD44H8, D45H8D44H11, D45H11 VCEO6080 VdcEmitter Base Current ContinuousIC10 AdcCollector Current Peak (Note 1)ICM20 AdcTotal Power Dissipation@ TC = 25 C@ TA = 25 and Storage Junction Temperature RangeTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be Pulse Width ms, Duty Cycle 50%.THERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to C/WThermal Resistance, Junction to C/WMaximum Lead Temperature for SolderingPurposes: 1/8 from Case for 5 SecondsTL275 C*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 220 CASE 221 ASTYLE 134110 AMP COMPLEMENTARYSILICON Power Transistors 60, 80 220(Pb Free)50 Units/RailORDERING INFORMATIOND4xHyy = Device Codex = 4 or 5yy = 8 or 11A= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageD45H11 GTO 220(Pb Free)50 Units/RailD44H11 GTO 220(Pb Free)50 Units/RailD44H8 GTO 220(Pb Free)50 Units/Rail1 BASEEMITTER 3 COLLECTOR 2, 41 BASEEMITTER 3 COLLECTOR 2, 4 PNPNPND44H series (NPN), D45H series (PNP) CHARACTERISTICS (TC = 25 C unless otherwise noted)

3 CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining VoltageD44H8, D45H8(IC = 30 mAdc, IB = 0 Adc)D44H11, D45H11 VCEO(sus)6080 VdcCollector Cutoff Current (VCE = Rated VCEO, VBE = 0)ICES 10mAEmitter Cutoff Current (VEB = Vdc)IEBO 10mAON CHARACTERISTICSDC Current Gain(VCE = Vdc, IC = Adc)(VCE = Vdc, IC = Adc)hFE6040 Collector Emitter Saturation Voltage(IC = Adc, IB = Adc)VCE(sat) Emitter Saturation Voltage(IC = Adc, IB = Adc)VBE(sat) CHARACTERISTICSC ollector Capacitance(VCB = 10 Vdc, ftest = MHz)D44H SeriesD45H SeriesCcb 90160 pFGain Bandwidth Product(IC = Adc, VCE = 10 Vdc, f = 20 MHz)D44H SeriesD45H SeriesfT 5040 MHzSWITCHING TIMESD elay and Rise Times(IC = Adc, IB1 = Adc)D44H SeriesD45H Seriestd + tr 300135 nsStorage Time(IC = Adc, IB1 = IB2 = Adc)D44H SeriesD45H Seriests 500500 nsFall Time(IC = Adc, IB1 = 102 = Adc)D44H SeriesD45H Seriestf 140100 nsProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical Characteristics if operated under different series (NPN), D45H series (PNP) 1. D44H11 DC Current GainFigure 2. D45H11 DC Current GainIC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS) , DC CURRENT GAINVCE = 1 V125 ChFE, DC CURRENT GAINF igure 3. D44H11 DC Current GainFigure 4. D45H11 DC Current GainIC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS) , DC CURRENT GAINVCE = 5 VhFE, DC CURRENT GAINF igure 5. D44H11 ON VoltageFigure 6. D45H11 ON VoltageIC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS) VOLTAGE (VOLTS)VCE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) 40 C25 CVCE = 1 V125 C 40 C25 C125 C 40 C25 CVCE = 5 V125 C 40 C25 C125 C 40 C25 (sat) @ IC/IB = 10125 C 40 C25 CD44H series (NPN), D45H series (PNP) 7.

5 D44H11 ON VoltageFigure 8. D45H11 ON VoltageIC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS) VOLTAGE (VOLTS)VBE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS)125 C 40 C25 (sat) @ IC/IB = 10125 C 40 C25 , COLLECTOR EMITTER VOLTAGE (VOLTS) 70 CDUTY CYCLE 50% ,11 Figure 9. Maximum Rated Forward BiasSafe Operating ms100 msIC, COLLECTOR CURRENT (AMPS)0 Figure 10. Power DeratingT, TEMPERATURE ( C) , Power DISSIPATION (WATTS)t, TIME (ms) (t), TRANSIENT THERMALZqJC(t) = r(t) RqJCRqJC = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)P(pk)t1t2 DUTY CYCLE, D = t1 PULSERESISTANCE (NORMALIZED)Figure 11. Thermal = series (NPN), D45H series (PNP) DIMENSIONSTO 220 CASE 221A 09 ISSUE AHNOTES:1.

6 DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES MINMAXMIN T CSTURJSTYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORPUBLICATION ORDERING INFORMATIONN. American Technical Support: 800 282 9855 Toll FreeUSA/CanadaEurope, Middle East and Africa Technical Support:Phone: 421 33 790 2910 Japan Customer Focus CenterPhone: 81 3 5817 1050D44H/DLITERATURE FULFILLMENT:Literature Distribution Center for ON Box 5163, Denver, Colorado 80217 USAP hone: 303 675 2175 or 800 344 3860 Toll Free USA/CanadaFax: 303 675 2176 or 800 344 3867 Toll Free USA/CanadaEmail: Semiconductor Website: Literature: additional information, please contact your localSales RepresentativeON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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