F085 Half Bridge Gate Driver - ON Semiconductor

1 FAN7080-GF085 half Bridge gate Driver FAN7080-GF085. half Bridge gate Driver Features Description Automotive Qualified to AEC Q100 The FAN7080-GF085 is a half - Bridge gate drive IC w ith reset input and adjustable dead time control. It is Floating Channel for Bootstrap Operation to +600 V designed for high voltage and high speed driving of Tolerance to Negative Transient Voltage on VS Pin MOSFET or IGBT, w hich operates up to 600 V. ON. Semiconductor 's high-voltage process and common- VS-pin dv/dt Immune mode noise cancellation technique provide stable gate Drive Supply Range from V to 20 V operation in the high side Driver under high-dV/dt noise circumstances. An advanced level-shift circuit allow s Under-Voltage Lockout (UVLO) high-side gate Driver operation up to V S=-5 V (typical) at CMOS Schmitt-triggered Inputs w ith Pull-dow n V BS=15 V.

2 Logic input is compatible w ith standard CMOS outputs. The UVLO circuits for both channels High Side Output In-phase w ith Input prevent from malfunction w hen V CC and V BS are low er than the specified threshold voltage. Combined pin IN input is V/5 V Logic Compatible and function for dead time adjustment and reset shutdow n Available on 15 V Input make this IC packaged w ith space saving SOIC-8. Matched Propagation Delay for both Channels Package. Minimum source and sink current capability of output Driver is 250 mA and 500 mA respectively, w hich Dead Time Adjustable is suitable for junction box application and half and full Bridge application in the motor drive system. Applications Junction Box half and full Bridge application in the motor drive system Related Product Resources Figure 1.

3 8-Lead, SOIC, Narrow Body Ordering Information Part Number Operating Package Packing Method Temperature Range FAN7080M-GF085 Tube 8-Lead, Small Outline Integrated Circuit (SOIC), FAN7080MX- -40 C ~ 125 C. JEDEC MS-012, .150 inch Narrow Body Tape & Reel GF085. 2012 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, FAN7080-GF085/D. FAN7080-GF085 half Bridge gate Driver Typical Application Up to 600V. VCC. 1 8. VCC VB. IN. 2 7. IN HO. To Load R1 VDT 3 6. SD/DT VS. SHUTDOWN. /DEAD TIME 4 COM LO 5. R2. VDT = Vdd*R2 / (R1+R2). Vdd is output voltage of Microcontroller. The operating range that allows a VDT range of ~ When pulled lower than VDT [Typ. ] the device is shutdown.

4 Care must be taken to avoid below threshold spikes on pin 3 that can cause undesired shut down of the IC. For this reason the connection of the components between pin 3 and ground has to be as short as possible. And a capacitor (Typ. F )between pin3 and COM can prevent this spike. This pin can not be left floating for the same reason. Figure 2. Typical Application Block Diagram VCC. VB. UVLO. R. vreg PULSE R Q HO. FILTER S. IN PULSE. DEADTIME GENERATOR. CONTROL VS. 500k . vreg VCC. VCC UVLO. SD/DT DELAY LO. 500k . COM. Figure 3. Block Diagram 2. FAN7080-GF085 half Bridge gate Driver Pin Configuration 1 8. VCC VB. 2 7. IN HO. 3 6. SD/DT VS. 4 COM LO 5. Figure 4. Pin Assignm ent (Top Through View ).

5 Pin Descriptions Pin # Name I/O Pin Function Description 1 V CC P Driver Supply Voltage 2 IN I Logic input for high and low side gate drive output 3 /SD/DT I Shutdow n Input and dead time setting 4 COM P Ground 5 LO A Low side gate drive output for MOSFET gate connection 6 VS A High side floating offset for MOSFET Source connection 7 HO A High side drive output for MOSFET gate connection 8 VB P Driver Output Stage Supply 3. FAN7080-GF085 half Bridge gate Driver Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

6 In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VS High-Side Floating Offset Voltage V B-25 V B+ V. VB High-Side Floating Supply Voltage 625 V. V HO High-Side Floating Output Voltage V V B+ V. V LO Low -Side Floating Output Voltage V cc+ V. V CC Supply Voltage 25 V. V IN Input Voltage for IN V CC+ V. (1). IIN Input Injection Current +1 mA. ( ). PD Pow er Dissipation W. (2). JA Thermal Resistance, Junction to Ambient 200 C/W. TJ Junction Temperature 150 C. TSTG Storage Temperature -55 150 C. Human Body Model (HBM) 1000. ESD V. Charge Device Model (CDM) 500.

7 Notes: 1. Guaranteed by design. Full function, no latchup. Tested at 10 V and 17 V. 2. The Thermal Resistance and pow er dissipation rating are measured per below conditions: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection/Still Air JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. 3. Do not exceed pow er dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings.

8 Symbol Parameter Min. Max. Unit (4). VB High-Side Floating Supply Voltage (DC) Transient: -10 V at S V S+6 V S+20 V. VS High-Side Floating Supply Offset Voltage (DC) -5 600 V. Transient: -25 V(max.) at S at V BS < 25 V. V HO High-Side Output Voltage VS VB V. V LO Low -Side Output Voltage 0 V CC V. V CC Supply Voltage for Logic Input 20 V. V IN Logic Input Voltage 0 V CC V. (5). dv/dt Allow able Offset Voltage Slew Rate 50 V/nS. (5,6). TPULSE Minimum Pulse Width 1100 nS. (6). FS Sw itching Frequency 200 KHz TA Operating Ambient Temperature -40 125 C. Notes: 4. The V S offset is tested w ith all supplies based at 15 V differential 5. Guaranteed by design. 6. When V DT = V. Refer to Figures 5, 6, 7 and 8.

9 4. FAN7080-GF085 half Bridge gate Driver Electrical Characteristics Unless otherw ise specified -40 C TA 125 C, V CC = 15 V, V BS=15 V, V S = 0 V, CL =1 nF. Symbol Parameter Conditions Min. Typ. Max. Unit V CC and V BS Supply Characteristics V CCUV+ V CC and V BS Supply Under-Voltage V. V BSUV+ Positive going Threshold V CCUV- V CC and V BS Supply Under-Voltage V. V BSUV- Negative going Threshold V CCUVH V CC and V BS Supply Under-Voltage V. V BSUVH Hysteresis tDUVCC V CC: 6 V V or V 6 V 20. Under-Voltage Lockout Response Time s tDUVBS V BS: 6 V V or V 6 V 20. ILK Offset Supply Leakage Current V B = V S = 600 V 20 50 A. IQBS Quiescent V BS Supply Current V IN = 0 or 5 V, V SDT = V 20 75 150 A. IQCC Quiescent V CC Supply Current VIN = 0 or 5 V, V SDT = V 350 1000 A.

10 Input Characteristics V IH High Logic level Input Voltage V. V IL Low Logic Level Input Voltage V. IIN+ Logic Input High Bias Current V IN = 5 V 10 50 A. IIN- Logic Input Low Bias Current V IN = 0 V 0 2 A. V DT V DT Dead Time Setting Range V. V SD V SD Shutdow n Threshold Voltage V. RSDT High Logic Level Resistance for /SD /DT V SDT = 5 V 100 500 1100 k . Low Logic Level Input bias Current for ISDT- V SDT = 0 V 1 2 A. /SD /DT. Output Characteristics V OH(HO) High Level Output Voltage (V CC - V HO) IO = 0 V. V OL(HO) Low Level Output Voltage (V HO) IO = 0 V. IO+(HO) Output High, Short-Circuit Pulse Current 250 300 mA. IO-(HO) Output Low , Short-Circuit Pulse Current 500 600 mA. ROP(HO) 60. Equivalent Output Resistance.