FOD814 - 4-Pin DIP Phototransistor Optocouplers

1 DATA Semiconductor Components Industries, LLC, 2006 August, 2021 Rev. 71 Publication Order Number: FOD814 /D4-Pin DIP PhototransistorOptocouplersFOD814, FOD817 Introduction or DescriptionThe FOD814 consists of two gallium arsenide infrared emittingdiodes, connected in inverse parallel, driving a silicon phototransistoroutput in a 4 pin dual in line package. The FOD817 series consists ofa gallium arsenide infrared emitting diode driving a siliconphototransistor in a 4 pin dual in line AC Input Response ( FOD814 ) Current Transfer Ratio in Selected Groups FOD814 : 20 300% FOD814A: 50 150% FOD817: 50 600% FOD817A: 80 160% FOD817B: 130 260% FOD817C: 200 400% FOD817D: 300 600% Minimum BVCEO of 70 V Guaranteed Safety and Regulatory Approvals UL1577, 5,000 VACRMS for 1 Minute DIN EN/IEC60747 5 5 This Device is Pb FreeTypical Applications FOD814 series AC Line Monitor Unknown Polarity DC Sensor Telephone Line Interface FOD817 series Power Supply Regulators Digital Logic Inputs Microprocessor InputsSee detailed ordering and shipping information on page 8 ofthis data INFORMATIONMARKING DIAGRAMPDIP4 CASE 646 CDCASE 646 CAV= VDE MarkX= One Digit Year CodeZZ= Two Digit Work WeekY= Assembly Package Code$Y= Logo81x= Specific Device Codex = 4 or 7 VXZZY$Y 81xPDIP4 GWCASE 709 AHFOD814, BLOCK DIAGRAMF igure 1.

2 Schematic FOD814 Anode, CathodeCathode, AnodeCollectorEmitterAnodeCathodeCollect orEmitter11223344 Figure 2. Schematic FOD817 SAFETY AND INSULATION RATINGSP arameterCharacteristicsInstallation Classifications per DIN VDE0110 Table 1, For Rated Mains Voltage< 150 VRMSI IV< 300 VRMSI IIIC limatic Classification30/110/21 Pollution Degree (DIN VDE 0110 )2 Comparative Tracking Index175 SymbolParameterValueUnitVPRI nput to Output Test Voltage, Method A, VIORM x = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC1360 VpeakInput to Output Test Voltage, Method B, VIORM x = VPR,100% Production Test with tm = 1 s, Partial Discharge < 5 pC1594 VIORMM aximum Working Insulation Voltage850 VIOTMH ighest Allowable Over Voltage8000 External Creepage 7mmExternal Clearance 7 External Clearance (for Option W, Lead Spacing) 10 DTID istance Through Insulation (Insulation Thickness) Temperature (Note 1)175 CIS,INPUTI nput Current (Note 1)

3 400mAPS,OUTPUTO utput Power (Note 1)700mWRIOI nsulation Resistance at TS, VIO = 500 V (Note 1)> 1011 As per DIN EN/IEC 60747 5 5, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with thesafety ratings shall be ensured by means of protective Safety limit values maximum values allowed in the event of a MAXIMUM RATINGS TA = 25 C unless otherwise specified. SymbolParameterValueUnitFOD814 FOD817 TOTAL DEVICETSTGS torage Temperature 55 to +150 CTOPRO perating Temperature 55 to +105 55 to +110 TJJunction Temperature 55 to +125 TSOLLead Solder Temperature260 for 10 s JCJunction to Case Thermal Resistance210 C/WPTOTT otal Device Power Dissipation200mWFOD814, MAXIMUM RATINGS TA = 25 C unless otherwise specified. (continued)ValueSymbolUnitFOD817 FOD814 ParameterEMITTERIFC ontinuous Forward Current 5050mAVRR everse Voltage6 VPDP ower Dissipation70mWDerate Above 100 CDETECTORVCEOC ollector Emitter Voltage70 VVECOE mitter Collector Voltage6 ICContinuous Collector Current50mAPCC ollector Power Dissipation150mWDerate Above 90 CStresses exceeding those listed in the Maximum Ratings table may damage the device.

4 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS TA = 25 C unless otherwise specified. INDIVIDUAL COMPONENT CHARACTERISTICSS ymbolParameterDeviceTest ConditionsMinTypMaxUnitEmmiterVFForward VoltageFOD814IF = 20 mA = 20 mA CurrentFOD817VR = V 10 ACtTerminal CapacitanceFOD814V = 0, f = 1 kHz 50250pFFOD817 30250 DetectorICEOC ollector Dark CurrentFOD814 VCE = 20 V, IF = 0 100nAFOD817 100 BVCEOC ollector Emitter Breakdown VoltageFOD814IC = mA, IF = 070 VFOD81770 BVECOE mitter Collector Breakdown VoltageFOD814IE = 10 A, IF = 06 FOD8176 DC TRANSFER CHARACTERISTICSS ymbolParameterDeviceTest ConditionsMinTypMaxUnitCTRC urrent Transfer Ratio (Note 2)FOD814IF = 1 mA, VCE = 5 V20 300%FOD814A50 150 FOD817IF = 5 mA, VCE = 5 V50 600 FOD817A80 160 FOD817B130 260 FOD817C200 400 FOD817D300 600 VCE(SAT)Collector Emitter Saturation VoltageFOD814IF = 20 mA, IC = 1 mA = 20 mA, IC = 1 mA , CHARACTERISTICS TA = 25 C unless otherwise specified.

5 (continued)AC TRANSFER CHARACTERISTICSS ymbolParameterDeviceTest ConditionsMinTypMaxUnitfCCut Off FrequencyFOD814 VCE = 5 V, IC = 2 mA,RL = 100 , 3 dB1580 kHztrResponse Time (Rise) FOD814 ,FOD817 VCE = 2 V, IC = 2 mA,RL = 100 (Note 3) 418 stfResponse Time (Fall) FOD814 ,FOD817 318 ISOLATION CHARACTERISTICSS ymbolParameterDeviceTest ConditionsMinTypMaxUnitVISOI nput Output Isolation Voltage(Note 4) FOD814 ,FOD817f = 60 Hz, t = 1 min,II O 2 A5000 VACRMSRISOI solation ResistanceFOD814,FOD817VI O = 500 VDC5x10101x1011 CISOI solation CapacitanceFOD814,FOD817VI O = 0, f = 1 MHz parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Current Transfer Ratio (CTR) = IC / IF x 100%3. For test circuit setup and waveforms, refer to page For this test, Pins 1 and 2 are common, and Pins 3 and 4 are ELECTRICAL/OPTICAL CHARACTERISTICS CURVES TA = 25 C unless otherwise 3.

6 Collector Power Dissipation Temperature ( FOD814 ) 55 40 20020406080100 120050100150200TA, Ambient Temperature (5C)PC, Collector Power Dissipation (mW)050100150200 55 40 20020406080100 120 Figure 4. Collector Power Dissipation Temperature (FOD817)PC, Collector Power Dissipation (mW)TA, Ambient Temperature (5C) FOD814 , ELECTRICAL/OPTICAL CHARACTERISTICS CURVES TA = 25 C unless otherwise specified. (continued)Figure 5. Collector Emitter Saturation Voltagevs. Forward , Forward Current (mA)VCE(sat), Collector Emitter SaturationVoltage (V) 6. Forward Current vs. Forward Voltage( FOD814 )VF, Forward Voltage (V)IF, Forward Current (mA)561 mA3 mA5 mA7 mAIC = mATA = 105 C75 C50 C25 C0 C 30 C 55 , Forward Current (mA)Current Transfer Ratio CTR (%) = 110 C75 C50 C25 C0 C 30 C 55 7. Forward Current vs. Forward Voltage(FOD817)VF, Forward Voltage (V)IF, Forward Current (mA) 8.

7 Current Transfer Ratio vs. 100 VCE = 5 VTA = 25 CFOD817 FOD8140201050 Figure 9. Collector Current Emitor Voltage ( FOD814 ) VCE, Collector Emitor Voltage (V)IC, Collector Current (mA)0103040PC(max)TA = 25 CIF = 30 mA20 mA10 mA5 mA1 mA2030405060708090 100015105 Figure 10. Collector Current Emitor Voltage (FOD817)VCE, Collector Emitor Voltage (V)IC, Collector Current (mA)0102025203040506070809030TA = 25 CPC(max)IF = 30 mA20 mA10 mA5 mA10TA = 25 CFOD814, ELECTRICAL/OPTICAL CHARACTERISTICS CURVES TA = 25 C unless otherwise specified. (continued)02040 Figure 11. Relative Current Transfer Ratio TemperatureTA, Ambient Temperature (5C)Relative Current Transfer Ratio (%) 60 4080100 20020406080100 12. Collector Emitter Saturation Voltagevs. Ambient TemperatureVCE(sat), Collector Emitter SaturationVoltage (V) = 1 mAVCE = 5 vFOD817IF = 5 mAVCE = 5 v60120140160TA, Ambient Temperature (5C)IF = 20 mAIC = 1 mA 60 40 20020406080100 12002040 Figure 13.

8 Led Power Dissipation vs. AmbientTemperature ( FOD814 )TA, Ambient Temperature (5C)PLED, Led Power Dissipation (mW) 55 4080100 200204060801001206002040 Figure 14. Led Power Dissipation vs. AmbientTemperature (FOD817)TA, Ambient Temperature (5C)PLED, Led Power Dissipation (mW) 55 4080100 15. Response Time vs. Load ResistanceRL, Load Resistance (kW)Response Time (ms) 20 10 Figure 16. Frequency Responsef, Frequency (kHz)AV, Voltage Gain (dB) 2101001000 VCE = 2 VIC = 2 mATA = 25 Ctrtftdts1 k 100 k 102050100 VCE = 2 VIC = 2 mATA = 25 CRL = 10 k FOD814 , ELECTRICAL/OPTICAL CHARACTERISTICS CURVES TA = 25 C unless otherwise specified. (continued) 17. Collector Dark Current vs. AmbientTemperatureTA, Ambient Temperature (5C)ICEO, Collector Dark Current (nA) 60 401000100 200204060801001201010000 Figure 18. Test Circuit for Response TimeFigure 19. Test Circuit for Frequency ResponseInputOutputtdtrtstf10%90%OutputV ccRLRDI nputOutputVccRLRDVCE = 20 VFOD814, PROFILEF igure 20.

9 Reflow ProfileTime (s)Temperature (5C)020406080100120140160180200220240260 120240360 TPTLMax. Ramp up Rate = 3 C/sMax. Ramp down Rate = 6 C/sTsmaxTsminPreheat AreatstLtPTime 25 C to PeakREFLOW PROFILEP rofile FeaturePb Free Assembly ProfileTemperature Min. (Tsmin)150 CTemperature Max. (Tsmax)200 CTime (tS) from (Tsmin to Tsmax)60 120 sRamp up Rate (tL to tP)3 C/s Temperature (TL)217 CTime (tL) Maintained Above (TL)60 150 sPeak Body Package Temperature260 C +0 C / 5 CTime (tP) within 5 C of 260 C30 sRamp down Rate (TP to TL)6 C/s 25 C to Peak Temperature8 min INFORMATION Part NumberPackageShipping FOD817 XDIP 4 PinTube (100 units per tube)FOD817 XSSMT 4 Pin (Lead Bend)Tube (100 units per tube)FOD817 XSDSMT 4 Pin (Lead Bend)Tape and Reel (1,000 units per reel)FOD817X300 DIP 4 Pin, DIN EN/IEC60747 5 5 optionTube (100 units per tube)FOD817X3 SSMT 4 Pin (Lead Bend), DIN EN/IEC60747 5 5 optionTube (100 units per tube)FOD817X3 SDSMT 4 Pin (Lead Bend), DIN EN/IEC60747 5 5 optionTape and Reel (1,000 units per reel)FOD817X300 WDIP 4 Pin, Lead Spacing, DIN EN/IEC60747 5 5 optionTape and Reel (1,000 units per reel)

10 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 :The product orderable part number system listed in this table also applies to the FOD814 products. X denotes the Current Transfer Ratio (CTR) , 646 CAISSUE ODATE 31 JUL 2016 MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.