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LM321 - Single Channel Operational Amplifier

Semiconductor Components Industries, LLC, 2015 October, 2019 Rev. 41 Publication Order Number: LM321 /DSingle Channel OperationalAmplifierLM321LM321 is a general purpose, Single Channel op amp with internalcompensation and a true differential input stage. This op amp featuresa wide supply voltage ranging from 3 V to 32 V for Single supplies and to 16 V for split supplies, suiting a variety of is unity gain stable even with large capacitive loads up nF. LM321 is available in a space-saving TSOP 5/SOT23 Wide Supply Voltage Range: 3 V to 32 V Short Circuit Protected Outputs True Differential Input Stage Low Input Bias Currents Internally Compensated Single and Split Supply Operation Unity Gain Stable with nF Capacitive Load This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantTypical Applications Gain Stage Active Filter Signal ProcessingMARKING 5 CASE 483 PIN CONNECT

Single Channel Operational Amplifier LM321 LM321 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging from 3 V to 32 V for single supplies and ±1.5 to ±16 V for split supplies, suiting a variety of applications.

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Transcription of LM321 - Single Channel Operational Amplifier

1 Semiconductor Components Industries, LLC, 2015 October, 2019 Rev. 41 Publication Order Number: LM321 /DSingle Channel OperationalAmplifierLM321LM321 is a general purpose, Single Channel op amp with internalcompensation and a true differential input stage. This op amp featuresa wide supply voltage ranging from 3 V to 32 V for Single supplies and to 16 V for split supplies, suiting a variety of is unity gain stable even with large capacitive loads up nF. LM321 is available in a space-saving TSOP 5/SOT23 Wide Supply Voltage Range: 3 V to 32 V Short Circuit Protected Outputs True Differential Input Stage Low Input Bias Currents Internally Compensated Single and Split Supply Operation Unity Gain Stable with nF Capacitive Load This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantTypical Applications Gain Stage Active Filter Signal ProcessingMARKING 5 CASE 483 PIN CONNECTIONADY = Specific Device CodeA= Assembly LocationY= YearW= Work WeekG= Pb-Free Package15 ADYAYWGG(Note.)

2 Microdot may be in either location)15 VCCIN+VEEOUTIN 12354 DevicePackageShipping ORDERING INFORMATIONLM321SN3T1 GTSOP 5(Pb Free)3000 / Tape & Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 1. ABSOLUTE MAXIMUM RATINGS (Over operating free-air temperature, unless otherwise stated)ParameterRatingUnitSupply Voltage36 VINPUT AND OUTPUT PINSI nput VoltageVEE to 32 VInput Current 10 mAOutput Short Circuit Duration (Note 1)ContinuousTEMPERATUREO perating Temperature 40 to +125 CStorage Temperature 65 to +150 CJunction Temperature 65 to +150 CESD RATINGS (Note 2)Human Body Model (HBM)200 VCharged Device Model (CDM)800 VMachine Model (MM)100 VOTHER RATINGSL atch-Up Current (Note 3)100mAMSLL evel 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be Short circuits can cause excessive heating and eventual This device series incorporates ESD protection and is tested by the following methods:ESD Human Body Model tested per JEDEC standard: JESD22 A114 ESD Machine Model tested per JEDEC standard: JESD22 A1153. Latch-up Current tested per JEDEC standard: JESD78 Table 2. THERMAL INFORMATION (Note 4)ParameterSymbolPackageValueUnitJunctio n to AmbientqJATSOP 5/SOT23 5235 C/W4. As mounted on an 80 80 mm FR4 PCB with 650 mm2 and 2 oz ( mm) thick copper heat spreader.

4 Following JEDECJESD/EIA , , test 3. RECOMMENDED OPERATING CONDITIONSP arameterSymbolRangeUnitSupply Voltage (VCC VEE)VS3 to 32 VSpecified Operating RangeTA 40 to 85 CCommon Mode Input Voltage RangeVCMVEE to VCC operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyondthe Recommended Operating Ranges limits may affect device 4. ELECTRICAL CHARACTERISTICS VS = 5 V (At TA = +25 C, RL = 10 kW connected to mid-supply, VCM = VOUT = mid-supply, unless otherwise limits apply over the specified temperature range, TA = 40 C to 85 C, guaranteed by characterization and/or design.)

5 ParameterSymbolConditionsMinTypMaxUnitIN PUT CHARACTERISTICSO ffset VoltageVOSVS=5V, VCM=VEE to VCC VTA = 25 CTA = 40 C to 85 C 79mVOffset Voltage Drift vs TempDVOS/DTTA = 40 C to 85 C 7 mV/ CInput Bias CurrentIIBTA = 25 CTA = 40 C to 85 C 10 500nAInput Offset CurrentIOSTA = 25 CTA = 40 C to 85 C 1 150nACommon Mode Rejection RatioCMRRVCM = VEE to VCC V6585 dBInput ResistanceRIND ifferentialCommon Mode 85300 GWInput CapacitanceCIND ifferentialCommon Mode pFOUTPUT CHARACTERISTICSOpen Loop Voltage GainAVOL 100 dBOpen Loop Output ImpedanceZOUT_OLf = UGBW, IO = 0 mA 1,200 WOutput Voltage HighVOHRL = 2 kW to VEERL = 10 kW to VEEVCC VOutput Voltage LowVOLRL = 10 kW to VCC VEE+ + Current CapabilityIOSinking CurrentVS = 5 VVS = 15 V10102020 mAOutput Current CapabilityIOSourcing CurrentVS = 5 VVS = 15 V20204040 mACapacitive Load DriveCLPhase Margin = 15 1,500 pFNOISE PERFORMANCEV oltage Noise DensityeNfIN = 1 kHz 40 nV/ HzDYNAMIC PERFORMANCEGain Bandwidth ProductGBWPCL = 25 pF, RL to VCC 750 kHzGain MarginAMCL = 25 pF, RL to VCC 14 dBPhase MarginaMCL = 25 pF, RL to VCC 60 Slew Rate SRCL = 25 pF.

6 RL = V/msPOWER SUPPLYP ower Supply Rejection RatioPSRRVS = 5 V to 32 V62100 dBQuiescent CurrentIQNo Load parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different 5. ELECTRICAL CHARACTERISTICS VS = 32 V (At TA = +25 C, RL = 10 kW connected to mid-supply, VCM = VOUT = mid-supply, unless otherwise limits apply over the specified temperature range, TA = 40 C to 85 C, guaranteed by characterization and/or design.)ParameterSymbolConditionsMinTypM axUnitINPUT CHARACTERISTICSO ffset VoltageVOSVS=32V, VCM=VEE to VCC VTA = 25 CTA = 40 C to 85 C 79mVOffset Voltage Drift vs TempDVOS/DTTA = 40 C to 85 C 7 mV/ CCommon Mode Rejection RatioCMRRVCM = VEE to VCC V 100 dBOUTPUT CHARACTERISTICSOpen Loop Voltage GainAVOLTA = 25 CTA = 40 C to 85 C 84100 dBOpen Loop Output ImpedanceZOUT_OLf = UGBW, IO = 0 mA 2,000 WOutput Voltage HighVOHRL = 2 kW to VEERL = 10 kW to VEEVCC VOutput Voltage LowVOLRL = 10 kW to VCC VEE+ + Load DriveCLPhase Margin = 15 1.

7 500 pFNOISE PERFORMANCEV oltage Noise DensityeNfIN = 1 kHz 40 nV/ HzTotal Harmonic Distortion +NoiseTHD+NVS=30V, fIN = 1 kHz, RL to VCC %DYNAMIC PERFORMANCEGain Bandwidth ProductGBWPCL = 25 pF, RL to VCC 900 kHzGain MarginAMCL = 25 pF, RL to VCC 18 dBPhase MarginaMCL = 25 pF, RL to VCC 66 Slew Rate SRCL = 25 pF, RL = V/msPOWER SUPPLYP ower Supply Rejection RatioPSRRVS = 5 V to 32 V62100 dBQuiescent CurrentIQNo Load, VS=32V parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different CHARACTERISTICSF igure 1.

8 Open Loop Gain and Phase Margin vs. FrequencyFigure 2. CMRR vs. FrequencyFigure 3. Inverting Large Signal Step ResponseFigure 4. Inverting Small Signal Step ResponseFigure 5. Phase Margin vs. Load CapacitanceFigure 6. Voltage Noise Density vs. FrequencyFrequency (Hz)Phase Margin (5)AVOL (dB)100 601001k10k100k1M10M 40 2002040608010012030609012015018021024027 0RL = 10 kWCL = 25 pFVS = 3 V, GainVS = 5 V, GainVS = 32 V, GainVS = 3 V, PhaseVS = 5 V, PhaseVS = 32 V, PhasePHASE MARGINF requency (Hz)CMRR (dB)1001020304050607080901001101001k10k1 00k1 MVS = 3 VVS = 5 VVS = 32 VTime (ms)Voltage (V) 10 40 102030405060708090100 3 2 101234VS = 10 VRL = 10 kWCL = 15 pFInputOutputTime (ms)Voltage (V) 2 = VRL = 10 kWCL = 15 pF Capacitance (pF)Phase Margin (5)100020030050010001500102030405060VS = 3 VVS = 5 VVS = 32 VFrequency (Hz)Voltage Noise Density (nV//Hz)

9 110101001k10k100k1001000VS = 3 VVS = 5 VVS = 32 VAV = 11 V/VRL = 10 CHARACTERISTICSF igure 7. THD+N vs. FrequencyFigure 8. Quiescent Current vs. TemperatureFigure 9. Input Offset Voltage vs. CommonMode Voltage at 3 V SupplyFigure 10. Input Offset Voltage vs. CommonMode Voltage at 5 V SupplyFigure 11. Input Offset Voltage vs. CommonMode Voltage at 32 V SupplyFigure 12. Input Bias and Offset Current (Hz)THD+N (%)10101001k10k100k1001000 Temperature (5C)Quiescent Current (mA) 40 = 3 VVS = 5 VVS = 32 VCommon Mode Voltage (V)Input Offset Voltage (mV) 40 CT= 25 CT= 85 = 3 VCommon Mode Voltage (V)Input Offset Voltage (mV) 40 CT= 25 CT= 85 CVS = 5 VCommon Mode Voltage (V)Input Offset Voltage (mV) 40 CT= 25 CT= 85 CVS = 32 VTemperature (5C)Current (nA) 10 40 20020406080 8 6 4 2024 IIB IIB+IOSVCM = CHARACTERISTICSF igure 13.

10 High Level Output Voltage Swing vs. Output Current at 3 V SupplyFigure 14. Low Level Output Voltage Swing vs. Output Current at 3 V SupplyFigure 15. High Level Output Voltage Swing vs. Output Current at 5 V SupplyFigure 16. Low Level Output Voltage Swing vs. Output Current at 5 V SupplyFigure 17. High Level Output Voltage Swing vs. Output Current at 32 V SupplyFigure 18. Low Level Output Voltage Swing vs. Output Current at 32 V SupplyOutput Source Current (mA)VCC VOH (V) 40 CT= 25 CT= 85 CVS = 3 VOutput Sink Current (mA)VOL VEE (mV)00510152020040060080010001200T= 40 CT= 25 CT= 85 CVS = 3 V1400 Output Source Current (mA)VCC VOH (V) 40 CT= 25 CT= 85 CVS = 5 Sink Current (mA)VOL VEE (mV)00510152020040060080010001200T= 40 CT= 25 CT= 85 CVS = 5 V140016001800 Output Source Current (mA)VCC VOH (V) 40 CT= 25 CT= 85 CVS = 32 Sink Current (mA)VOL VEE (V)


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