MBR2045CT - Switch-mode Power Rectifier

1 Semiconductor Components Industries, LLC, 2016 July, 2020 Rev. 131 Publication Order Number: MBR2045CT /DSwitch-modePower RectifierMBR2045 CTG,MBRF2045 CTGF eatures and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) These Devices are Pb Free and are RoHS CompliantApplications Power Supply Output Rectification Power Management InstrumentationMechanical Characteristics Case: Epoxy, Molded Epoxy Meets UL 94, V 0 @ in Weight: Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max. for 10 Seconds ESD Rating:Human Body Model = 3 BMachine Model = BARRIERRECTIFIER20 AMPERES, 45 VOLTS132, 4TO 220 ABCASE 221 ASTYLE 63412 See detailed ordering and shipping information on page 3 ofthis data INFORMATIONTO 220 FULLPAK]CASE 221 DSee general marking information in the device markingsection on page 2 of this data MARKING INFORMATION312 MBR2045 CTG, 220 ABFigure 1.

2 Marking DiagramsAYWWMBR2045 CTGAKATO 220 FULLPAKtAYWWB2045 GAKAA= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageAKA= Diode PolarityMAXIMUM RATINGSR atingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR45 VAverage Rectified Forward CurrentPer DevicePer Diode (TC = 165 C)IF(AV)2010 APeak Repetitive Forward Currentper Diode Leg (Square Wave, 20 kHz, TC = 163 C)IFRM20 ANon Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM150 APeak Repetitive Reverse Surge Current ( ms, kHz)See Figure Temperature RangeTstg 65 to +175 COperating Junction Temperature (Note 1)TJ 65 to +175 CVoltage Rate of Change (Rated VR)dv/dt10,000V/msStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1 CHARACTERISTICSC haracteristicSymbolValueUnitMaximum Thermal Resistance(MBR2045 CTG) Junction to Case Junction to Ambient(MBRF2045 CTG) Junction to Case Junction to C/WMBR2045 CTG, CHARACTERISTICSC haracteristicSymbolMinTypMaxUnitInstanta neous Forward Voltage (Note 2)(iF = 10 A, TJ = 125 C)(iF = 20 A, TJ = 125 C)(iF = 20 A, TJ = 25 C)vF Reverse Current (Note 2)(Rated dc Voltage, TJ = 125 C)(Rated dc Voltage, TJ = 25 C)iR parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

3 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width = 300 ms, Duty Cycle INFORMATIOND evice Order NumberPackage TypeShipping MBR2045 CTGTO 220(Pb Free)50 Units / RailMBRF2045 CTGTO 220FP(Pb Free)50 Units / RailFigure 1. Typical Forward , INSTANTANEOUS VOLTAGE (VOLTS) , INSTANTANEOUS FORWARD CURRENT (AMPS) = 150 CFigure 2. Maximum Forward , INSTANTANEOUS VOLTAGE (VOLTS) , INSTANTANEOUS FORWARD CURRENT (AMPS) = 150 C25 C125 C25 , , REVERSE VOLTAGE (VOLTS) , REVERSE CURRENT (mA)IR20302510035405045 Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse CurrentTJ = 150 C125 C100 C75 C25 , REVERSE VOLTAGE (VOLTS) , REVERSE CURRENT (mA)IR20302510035405045TJ = 150 C125 C100 C25 C140TC, CASE TEMPERATURE ( C) , AVERAGE FORWARD CURRENT (AMPS)IF(AV)15015518160165 Figure 5. Maximum Surge CapabilityFigure 6.

4 Current Derating, Case, Per Leg40IF(AV), AVERAGE FORWARD CURRENT (AMPS)16108408, AVERAGE FORWARD Power DISSIPATION (WATTS)PF(AV)12201628243028 Figure 7. Current Derating, Ambient, Per LegFigure 8. Forward Power Dissipation16141262181412dcTJ = 175 CSQUAREWAVEdcSQUAREWAVENUMBER OF CYCLES AT 60 , PEAK HALF-WAVE CURRENT (AMPS) , AMBIENT TEMPERATURE ( C) (AV), AVERAGE FORWARD CURRENT (AMPS) WAVEdcRqJA = 16 C/W(With TO-220 Heat Sink)RqJA = 60 C/W(No Heat Sink)15016182017017518020222426261018142 226 MBR2045 CTG, (t), TRANSIENT THERMAL RESISTANCE(NORMALIZED) , TIME (ms) CYCLE, D = tp/t1 PEAK Power , Ppk, is peak of anequivalent square Power = Ppk RqJL [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where:DTJL = the increase in junction temperature above the lead (t) = normalized value of transient thermal resistance at time, t, :r(t1 + tp) = normalized value of transient thermal resistance at time,t1 + tp, 9.

5 Thermal Response for 10. Thermal Response Junction to Ambient for = (t), TRANSIENT THERMAL RESISTANCEt1, TIME (sec)P(pk)t1t2 DUTY CYCLE, D = t1/t2R(t), TRANSIENT THERMAL RESISTANCEF igure 11. Thermal Response Junction to Case for MBRF2045 CTt1, TIME (sec) = (pk)t1t2 DUTY CYCLE, D = t1/t2 MBR2045 CTG, FREQUENCY OPERATIONS ince current flow in a Schottky Rectifier is the result ofmajority carrier conduction, it is not subject to junction di-ode forward and reverse recovery transients due to minoritycarrier injection and stored charge. Satisfactory circuit ana-lysis work may be performed by using a model consistingof an ideal diode in parallel with a variable capacitance.(See Figure 12.)Rectification efficiency measurements show that opera-tion will be satisfactory up to several megahertz. For ex-ample, relative waveform rectification efficiency is ap-proximately 70 percent at MHz, , the ratio of dcpower to RMS Power in the load is at this frequency,whereas perfect rectification would yield for sinewave inputs.

6 However, in contrast to ordinary junction di-odes, the loss in waveform efficiency is not indicative ofpower loss; it is simply a result of reverse current flowthrough the diode capacitance, which lowers the dc kHz12 V100 VCC12 Vdc2N2222 CURRENTAMPLITUDEADJUST0-10 kW+150 V, 10 mF+VR, REVERSE VOLTAGE (VOLTS)10005003000050700C, CAPACITANCE (pF)Figure 12. Typical Capacitance10203020040 Figure 13. Test Circuit for dv/dt and Reverse Surge CurrentTJ = 25 Cf = 1 MHz100600400800900 FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other 220 FULLPAKCASE 221D 03 ISSUE KDATE 27 FEB 2009 STYLE 4:PIN 1. CATHODE2. ANODE3. CATHODESTYLE 1:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. CATHODE3. 5:PIN 1.

7 CATHODE 2. ANODE 3. GATESTYLE 6:PIN 1. MT 1 2. MT 2 3. GATESEATINGPLANE T UCSJRSCALE 1:1 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: INCH3. 221D-01 THRU 221D-02 OBSOLETE, NEWSTANDARD = Specific Device CodeG= Pb Free PackageA= Assembly LocationY= YearWW= Work WeekxxxxxxGAYWWA= Assembly LocationY= YearWW= Work Weekxxxxxx= Device CodeG= Pb Free PackageAKA= Polarity DesignatorAYWW xxxxxxGAKAB ipolarRectifier B Y GNDLKHAFQ3 ( )YMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

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