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MC33153 - Single IGBT Gate Driver

Semiconductor Components Industries, LLC, 2013 August, 2013 Rev. 81 Publication Order Number: MC33153 /DMC33153 Single igbt Gate DriverThe MC33153 is specifically designed as an igbt Driver for highpower applications that include ac induction motor control, brushlessdc motor control and uninterruptable power supplies. Althoughdesigned for driving discrete and module IGBTs, this device offers acost effective solution for driving power MOSFETs and BipolarTransistors. Device protection features include the choice ofdesaturation or overcurrent sensing and undervoltage detection. Thesedevices are available in dual in line and surface mount High Current Output Stage: A A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for igbt s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors This i

• Undervoltage Lockout Optimized for IGBT’s • Negative Gate Drive Capability • Cost Effectively Drives Power MOSFETs and Bipolar Transistors • This is a Pb−Free and Halide−Free Device Figure 1. Representative Block Diagram This device contains 133 active transistors. Short Circuit Latch Overcurrent Latch Fault Output S Q R Current ...

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Transcription of MC33153 - Single IGBT Gate Driver

1 Semiconductor Components Industries, LLC, 2013 August, 2013 Rev. 81 Publication Order Number: MC33153 /DMC33153 Single igbt Gate DriverThe MC33153 is specifically designed as an igbt Driver for highpower applications that include ac induction motor control, brushlessdc motor control and uninterruptable power supplies. Althoughdesigned for driving discrete and module IGBTs, this device offers acost effective solution for driving power MOSFETs and BipolarTransistors. Device protection features include the choice ofdesaturation or overcurrent sensing and undervoltage detection. Thesedevices are available in dual in line and surface mount High Current Output Stage: A A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for igbt s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors This is a Pb Free and Halide Free DeviceFigure 1.

2 Representative Block DiagramThis device contains 133 active CircuitLatchOvercurrentLatchFaultOutputS QRC urrentSenseInputKelvinGNDF aultBlanking/DesaturationInputDriveOutpu tShort CircuitComparatorOvercurrentComparatorFa ult Blanking/DesaturationComparatorUnderVolt ageLockoutInputVEEVCCVCCVCCVEEVEEVCCVEEV CCVEEVCCVEEVCCSQRVCCVCC67453821130 mV65 mV270 VOutputStage12 V/11 V100 kPDIP 8P SUFFIXCASE 626 See detailed ordering and shipping information in the packagedimensions section on page 12 of this data 8D SUFFIXCASE 751 PIN CONNECTIONSMC33153 PYYWWG118 AWL33153 ALYWG181A= Assembly LocationL, WL= Wafer LotY, YY= YearW, WW = Work WeekG or G= Pb Free Package(Note.)

3 Microdot may be in either location)18765234(Top View)Current SenseInputKelvin GNDVEEI nputFault Blanking/Desaturation InputDrive OutputFault OutputVCCMC33153 RATINGSR atingSymbolValueUnitPower Supply VoltageVCC to VEEK elvin Ground to VEE (Note 1)VCC VEEKGND VEE20 VLogic InputVinVEE to VCCVC urrent Sense InputVS to VCCVB lanking/Desaturation InputVBD to VCCVGate Drive OutputSource CurrentSink CurrentDiode Clamp OutputSource CurrentSink CurrentIFO2510mAPower Dissipation and Thermal CharacteristicsD Suffix SO 8 Package, Case 751 Maximum Power Dissipation @ TA = 50 CThermal Resistance, Junction to AirP Suffix DIP 8 Package, Case 626 Maximum Power Dissipation @ TA = 50 CThermal Resistance, Junction to C/WW C/WOperating Junction TemperatureTJ+150 COperating Ambient TemperatureTA 40 to +105 CStorage Temperature RangeTstg 65 to +150 CElectrostatic Discharge Sensitivity (ESD) (Note 2)

4 Human Body Model (HBM)Machine Model (MM)Charged Device Model (CDM)ESD25002501500 VNOTE:ESD data available upon exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice Kelvin Ground must always be between VEE and ESD protection per JEDEC Standard JESD22 A114 F for HBMper JEDEC Standard JESD22 A115 A for MMper JEDEC Standard JESD22 C101D for CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25 C,for min/max values TA is the operating ambient temperature range that applies (Note 3), unless otherwise noted.)

5 CharacteristicSymbolMinTypMaxUnitLOGIC INPUTI nput Threshold VoltageHigh State (Logic 1)Low State (Logic 0)VIHVIL VInput CurrentHigh State (VIH = V)Low State (VIL = V)IIHIIL 13050500100mADRIVE OUTPUTO utput VoltageLow State (ISink = A)High State (ISource = 500 mA)VOLVOH VOutput Pull Down ResistorRPD 100200kWFAULT OUTPUTO utput VoltageLow State (ISink = mA)High State (ISource = 20 mA)VFLVFH V3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as = 40 C for MC33153 Thigh = +105 C for MC33153MC33153 CHARACTERISTICS (continued) (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE.)

6 For typical values TA = 25 C,for min/max values TA is the operating ambient temperature range that applies (Note 4), unless otherwise noted.)CharacteristicSymbolMinTypMaxUnit SWITCHING CHARACTERISTICSP ropagation Delay (50% Input to 50% Output CL = nF)Logic Input to Drive Output RiseLogic Input to Drive Output FalltPLH(in/out)tPHL (in/out) 80120300300nsDrive Output Rise Time (10% to 90%) CL = nFtr 1755nsDrive Output Fall Time (90% to 10%) CL = nFtf 1755nsPropagation DelayCurrent Sense Input to Drive OutputFault Blanking/Desaturation Input to Drive OutputtP(OC)tP(FLT) VoltageVCC VoltageVCC Threshold Voltage (VPin8 > V)VSOC506580mVShort Circuit Threshold Voltage (VPin8 > V)VSSC100130160mVFault Blanking/Desaturation Threshold (VPin1 > 100 mV)Vth(FLT)

7 Sense Input Current (VSI = 0 V)ISI 10mAFAULT BLANKING/DESATURATION INPUTC urrent Source (VPin8 = 0 V, VPin4 = 0 V)Ichg 200 270 300mADischarge Current (VPin8 = 15 V, VPin4 = V) mATOTAL DEVICEP ower Supply CurrentStandby (VPin 4 = VCC, Output Open)Operating (CL = nF, f = 20 kHz)ICC Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as = 40 C for MC33153 Thigh = +105 C for , OUTPUT VOLTAGE (V)Vin, INPUT VOLTAGE (V)Iin, INPUT CURRENT (mA)Figure 2. Input Current versus Input VoltageVin, INPUT VOLTAGE (V)Figure 3. Output Voltage versus Input VoltageVCC = 15 VTA = 25 CVCC = 15 VTA = 25 , DRIVE OUTPUT HIGH STATE VOLTAGE (V)VOH, DRIVE OUTPUT HIGH STATE VOLTAGE (V) , OUTPUT SOURCE CURRENT (A)VCC = 15 VTA = 25 CISink, OUTPUT SINK CURRENT (A)TA = 25 CVCC = 15 VVCC, SUPPLY VOLTAGE (V)TA, AMBIENT TEMPERATURE ( C)VCC = 15 VISource = 500 mAVOL, OUTPUT LOW STATE VOLTAGE (V)TA, AMBIENT TEMPERATURE ( C)ISink = AFigure 4.

8 Input Threshold Voltageversus TemperatureTA, AMBIENT TEMPERATURE ( C)Figure 5. Input Threshold Voltageversus Supply VoltageFigure 6. Drive Output Low State Voltageversus TemperatureFigure 7. Drive Output Low State Voltageversus Sink CurrentFigure 8. Drive Output High State Voltageversus TemperatureFigure 9. Drive Output High State Voltageversus Source CurrentTA = 25 CVCC = 15 VVIHVILVIHVIL- VIL, INPUT THRESHOLD VOLTAGE (V)VIH- VIL, INPUT THRESHOLD VOLTAGE (V)VIHVOL, OUTPUT LOW STATE VOLTAGE (V)= 500 mA= 250 mAVCC = 15 , SHORT CIRCUIT THRESHOLD VOLTAGE (mV)VSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)12135127010014-60135-60705016 VCC, SUPPLY VOLTAGE (V)TA = 25 CVCC, SUPPLY VOLTAGE (V)TA = 25 CVPin 7, FAULT OUTPUT VOLTAGE (V)VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)TA, AMBIENT TEMPERATURE ( C)VCC = 15 VVSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)TA, AMBIENT TEMPERATURE ( C)VCC = 15 VVO, DRIVE OUTPUT VOLTAGE (V)Figure 10.

9 Drive Output Voltageversus Current Sense Input VoltageVPin 1, CURRENT SENSE INPUT VOLTAGE (mV)Figure 11. Fault Output Voltageversus Current Sense Input VoltageFigure 12. Overcurrent Protection ThresholdVoltage versus TemperatureFigure 13. Overcurrent Protection ThresholdVoltage versus Supply VoltageFigure 14. Short Circuit Comparator ThresholdVoltage versus TemperatureFigure 15. Short Circuit Comparator ThresholdVoltage versus Supply VoltageVCC = 15 VVPin 4 = 0 VVPin 8 > VTA = 25 CVCC = 15 VVPin 4 = 0 VVPin 8 > VTA = 25 , CURRENT SOURCE ( A)Ichg , CURRENT SOURCE ( A)VBDT, FAULT , SUPPLY VOLTAGE (V)VPin 4 = 0 VVPin 8 = 0 VTA = 25 CVCC, SUPPLY VOLTAGE (V)VPin 4 = 0 VVPin 1 > 100 mVTA = 25 CVO, DRIVE OUTPUT VOLTAGE (V)VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)VCC = 15 VVPin 4 = 0 VVPin 1 > 100 mVTA = 25 CIchg TA, AMBIENT TEMPERATURE ( C)VCC = 15 VVPin 8 = 0 VVBDT, FAULT BLANKING/DESATURATIONTA, AMBIENT TEMPERATURE ( C)VCC = 15 VVPin 4 = 0 VVPin 1 > 100 mVISI, CURRENT SENSE INPUT CURRENT ( A) Figure 16.

10 Current Sense Input Currentversus VoltageVPin 1, CURRENT SENSE INPUT VOLTAGE (V)Figure 17. Drive Output Voltage versus FaultBlanking/Desaturation Input VoltageVCC = 15 VTA = 25 CFigure 18. Fault Blanking/Desaturation ComparatorThreshold Voltage versus TemperatureFigure 19. Fault Blanking/Desaturation ComparatorThreshold Voltage versus Supply VoltageFigure 20. Fault Blanking/Desaturation CurrentSource versus TemperatureFigure 21. Fault Blanking/Desaturation CurrentSource versus Supply VoltageTHRESHOLD VOLTAGE (V)THRESHOLD VOLTAGE (V) , DISCHARGE CURRENT (mA) (UVLO), UNDERVOLTAGETA, AMBIENT TEMPERATURE ( C)Startup ThresholdVCC IncreasingISource, OUTPUT SOURCE CURRENT (mA)VCC = 15 VVPin 4 = 0 VVPin 1 = VPin 8 = OpenTA = 25 CVPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)VO, DRIVE OUTPUT VOLTAGE (V)VCC, SUPPLY VOLTAGE (V)VPin 4 = 0 VTA = 25 CVPin 7, FAULT OUTPUT VOLTAGE (V)ISink, OUTPUT SINK CURRENT (mA)VCC = 15 VVPin 4 = VTA = 25 CFigure 22.


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