MJE13003 - SWITCHMODE Series NPN Silicon Power …

1 Semiconductor Components Industries, LLC, 2006 January, 2006 Rev. 21 Publication Order Number: MJE13003 /DMJE13003 SWITCHMODEt Series NPNS ilicon Power TransistorThese devices are designed for high voltage, high speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection Reverse Biased SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix to A, 25 and 100_Ctc @ 1 A, 100_C is 290 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information Pb Free Package is Available*MAXIMUM RATINGSR atingSymbolValueUnit Collector Emitter Voltage VCEO(sus)

2 400 Vdc Collector Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current Continuous Peak (Note 1) ICICM Adc Base Current Continuous Peak (Note 1) IBIBM Adc Emitter Current Continuous Peak (Note 1) IEIEM Adc Total Power Dissipation @ TA = 25_CDerate above 25_C PD WmW/_C Total Power Dissipation @ TC = 25_CDerate above 25_C PD 40320 WmW/_C Operating and Storage Junction Temperature Range TJ, Tstg 65 to+ 150 _CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnit Thermal Resistance.

3 Junction to Case RqJC _C/W Thermal Resistance, Junction to Ambient RqJA 89 _C/W Maximum Load Temperature for SolderingPurposes: 1/8 from Case for 5 Seconds TL 275 _CMaximum ratings are those values beyond which device damage can ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

4 *For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, INFORMATIONMJE13003TO 225500 AMPERESNPN Silicon POWERTRANSISTORS300 AND 400 VOLTS40 225(Pb Free)500 Units/BoxTO 225 CASE 77 STYLE 3213 MARKING DIAGRAMYWWJE13003GY= YearWW= Work WeekJE13003= Device CodeG= Pb Free Package1 BASE2 COLLECTOR3 EMITTERMJE13003 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2)

5 Collector Emitter Sustaining Voltage (IC = 10 mA, IB = 0) VCEO(sus) 400 Vdc Collector Cutoff Current(VCEV = Rated Value, VBE(off) = Vdc)(VCEV = Rated Value, VBE(off) = Vdc, TC = 100_C) ICEV 15 mAdc Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO 1 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased IS/b See Figure 11 Clamped Inductive SOA with base reverse biased RBSOA See Figure 12 ON CHARACTERISTICS (Note 2)

6 DC Current Gain(IC = Adc, VCE = 2 Vdc)(IC = 1 Adc, VCE = 2 Vdc) hFE 85 4025 Collector Emitter Saturation Voltage(IC = Adc, IB = Adc)(IC = 1 Adc, IB = Adc)(IC = Adc, IB = Adc)(IC = 1 Adc, IB = Adc, TC = 100_C) VCE(sat) Vdc Base Emitter Saturation Voltage(IC = Adc, IB = Adc)(IC = 1 Adc, IB = Adc)(IC = 1 Adc, IB = Adc, TC = 100_C) VBE(sat) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz)

7 FT 4 10 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = MHz) Cob 21 pF SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time (VCC = 125 Vdc, IC = 1 A,IB1 = IB2 = A, tp = 25 ms,Duty Cycle v 1%) td ms Rise Time tr 1 ms Storage Time ts 2 4 ms Fall Time tf ms Inductive Load, Clamped (Table 1, Figure 13) Storage Time (IC = 1 A, Vclamp = 300 Vdc,IB1 = A, VBE(off) = 5 Vdc, TC = 100_C)

8 Tsv 4 ms Crossover Time tc ms Fall Time tfi ms2. Pulse Test: PW = 300 ms, Duty Cycle v 2%. MJE13003 , CAPACITANCE (pF)VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMP) , COLLECTOR CURRENT (AMP) 1. DC Current GainIC, COLLECTOR CURRENT (AMP) 2. Collector Saturation , BASE CURRENT (AMP) , DC CURRENT GAINVCE = 2 VVCE = 5 3. Base Emitter VoltageFigure 4. Collector Emitter Saturation RegionFigure 5.

9 Collector Cutoff , BASE EMITTER VOLTAGE (VOLTS)10 10TJ = 25 CTJ = 150 6. Capacitance500VR, REVERSE VOLTAGE (VOLTS) , COLLECTOR CURRENT ( A) + + + = 250 V7010220500 25 C 55 AIC = ATJ = 55 AVBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 , VOLTAGE (VOLTS)V, VOLTAGE (VOLTS)IC/IB = A 25 C 25 CCobTJ = 55 C 25 C150 CTJ = 150 C125 C100 C75 C50 C25 CTJ = 25 CMJE13003 BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHINGRESISTIVESWITCHINGOUTPUT WAVEFORMSTEST CIRCUITSCIRCUITVALUESTEST WAVEFORMSNOTEPW and VCC Adjusted for Desired ICRB Adjusted for Desired IB15 VPWDUTY CYCLE 10%tr, tf 10 ns681 mF1N4933270+ 5 V1k2N2905471/2 W100 VBE(off) + 5 VLICMR826*Vclamp*SELECTED FOR 1 k51+125 VRCSCOPE Data.

10 Ferroxcube Core #6656 Full Bobbin (~200 Turns) #20 GAP for 30 mH/2 ALcoil = 50 mHVCC = 20 VVclamp = 300 VdcVCC = 125 VRC = 125 WD1 = 1N5820 or = 47 WICVCEIC(pk)tt2tf CLAMPEDt1 Adjusted toObtain ICt1 Lcoil (ICpk)VCCt2 Lcoil (ICpk)VclampTest EquipmentScope Tektronics475 or Equivalent+ V25 ms0 Vtr, tf < 10 nsDuty Cycle = and RC adjustedfor desired IB and ICtVCE orVclampTIMEt1tfTable 1. Test Conditions for Dynamic PerformanceMJE13003 IB1tsvICPKV clamp90% Vclamp90% IC10% Vclamp10%ICPK2% ICIB tfittitcFigure 7. Inductive Switching MeasurementsTable 2.