MJE15032 - Complementary Silicon Plastic Power Transistors

1 Semiconductor Components Industries, LLC, 2014 December, 2014 Rev. 61 Publication Order Number: MJE15032 /DMJE15032 (NPN),MJE15033 (PNP) Complementary SiliconPlastic Power TransistorsDesigned for use as high frequency drivers in audio High DC Current Gain High Current Gain Bandwidth Product TO 220 Compact Package Epoxy Meets UL 94 V 0 @ in These Devices are Pb Free and are RoHS Compliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO250 VdcCollector Base VoltageVCB250 VdcEmitter Base Current Current PeakICM16 AdcBase Power Dissipation@ TC = 25_CDerate above Power Dissipation@ TA = 25_CDerate

2 Above and Storage JunctionTemperature RangeTJ, Tstg 65 to + 150_CESD Human Body ModelHBM3 BVESD Machine ModelMMCVS tresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance,Junction to Resistance,Junction to *For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual.

3 INFORMATIONTO 220 CASE 221 ASTYLE 1 MARKINGDIAGRAMMJE1503x = Specific Device Codex= 2 or 3A= Assembly LocationY= YearWW= Work WeekG= Pb Free AMPERESPOWER TRANSISTORSCOMPLEMENTARY SILICON250 VOLTS, 50 WATTS1234 MJE1503xGAYWWMJE15032 GTO 220(Pb Free)50 Units/RailMJE15033 GTO 220(Pb Free)50 Units/RailCOMPLEMENTARY1 BASE3 EMITTERCOLLECTOR2, 41 BASE3 EMITTERCOLLECTOR2, 4 MJE15032 (NPN), MJE15033 (PNP) CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage (Note 1)(IC = 10 mAdc, IB = 0)VCEO(sus)250 VdcCollector Cutoff Current(VCB = 250 Vdc, IE = 0)ICBO 10mAdcEmitter Cutoff Current(VBE = Vdc, IC = 0)IEBO 10mAdcON CHARACTERISTICS (Note 1)DC Current Gain(IC = Adc, VCE = Vdc)(IC = Adc, VCE = Vdc)(IC = Adc, VCE = Vdc)hFE705010 Collector Emitter Saturation Voltage(IC = Adc, IB = Adc)VCE(sat) Emitter On Voltage(IC = Adc, VCE = Vdc)VBE(on)

4 CHARACTERISTICSC urrent Gain Bandwidth Product (Note 2)(IC = 500 mAdc, VCE = 10 Vdc, ftest = MHz)fT30 MHzProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle fT = hfe (NPN), MJE15033 (PNP) , TIME (ms) (t), TRANSIENT THERMALZqJC(t) = r(t) RqJCRqJC = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)P(pk)t1t2 DUTY CYCLE, D = t1 PULSERESISTANCE (NORMALIZED)Figure 1.

5 Thermal = ms100 ms50 ms10 2. MJE15032 & MJE15033 Safe Operating AreaVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMPS) are two limitations on the Power handling ability ofa transistor : average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation, , the transistor must not be subjected to greaterdissipation then the curves data of Figures 2 and 4 is based on TJ(pk) = 150_C;TC is variable depending on conditions.

6 Second breakdownpulse limits are valid for duty cycles to 10% provided TJ(pk)< 150_C. TJ(pk) may be calculated from the data in Figure high case temperatures, thermal limitations will reducethe Power that can be handled to values less than thelimitations imposed by second 3. Power DeratingT, TEMPERATURE ( C)0406010012016040TC2060PD, Power DISSIPATION (WATTS) (NPN), MJE15033 (PNP) C150 C-55 4. NPN MJE15032 VCE = 5 V DC Current GainIC, COLLECTOR CURRENT (AMPS) , DC CURRENT 5. PNP MJE15033 VCE = 5 V DC Current GainFigure 6.

7 NPN MJE15032 VCE = 5 V VBE(on) CurveIC, COLLECTOR CURRENT (AMPS) , VOLTAGE (VOLTS) 7. PNP MJE15033 VCE = 5 V VBE(on) CurveIC, COLLECTOR CURRENT (AMPS)10V, VOLTAGE (VOLTS) MJE15032 PNP MJE1503325 C150 C-55 C25 C150 C-55 , COLLECTOR CURRENT (AMPS) , DC CURRENT C150 C-55 CIC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS)V, VOLTAGE (VOLTS)Figure 8. NPN MJE15032 VCE(sat) IC/IB = 10 Figure 9. PNP MJE15033 VCE(sat) IC/IB = , VOLTAGE (VOLTS) C150 C-55 C25 C150 C-55 CMJE15032 (NPN), MJE15033 (PNP) , COLLECTOR CURRENT (AMPS) , VOLTAGE (VOLTS)NPN MJE15032 PNP MJE15033V, VOLTAGE (VOLTS)Figure 10.

8 NPN MJE15032 VCE(sat) IC/IB = 20 Figure 11. PNP MJE15033 VCE(sat) IC/IB = , COLLECTOR CURRENT (AMPS) 12. NPN MJE15032 VBE(sat) IC/IB = 10 Figure 13. PNP MJE15033 VBE(sat) IC/IB = C150 C-55 CIC, COLLECTOR CURRENT (AMPS) C150 C-55 C, BASE EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMPS) , BASE EMITTER VOLTAGE (VOLTS)BE25 C150 C-55 C25 C150 C-55 CTO 220 CASE 221 AISSUE AKDATE 13 JAN 2022 SCALE 1:1 STYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 2:PIN 1. BASE2. EMITTER3.

9 COLLECTOR4. EMITTERSTYLE 3:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 4:PIN 1. MAIN TERMINAL 12. MAIN TERMINAL 23. GATE4. MAIN TERMINAL 2 STYLE 7:PIN 1. CATHODE2. ANODE3. CATHODE4. ANODESTYLE 10:PIN 1. GATE2. SOURCE3. DRAIN4. SOURCESTYLE 5:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 8:PIN 1. CATHODE2. ANODE3. EXTERNAL TRIP/DELAY4. ANODESTYLE 6:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 9:PIN 1. GATE2. COLLECTOR3.

10 EMITTER4. COLLECTORSTYLE 11:PIN 1. DRAIN2. SOURCE3. GATE4. SOURCESTYLE 12:PIN 1. MAIN TERMINAL 12. MAIN TERMINAL 23. GATE4. NOT CONNECTEDMECHANICAL CASE OUTLINEPACKAGE DIMENSIONS98 ASB42148 BDOCUMENT NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1TO 220onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries.