MMBT2222LT1 - General Purpose Transistors

1 Semiconductor Components Industries, LLC, 1994 October, 2016 Rev. 111 Publication Order Number: MMBT2222LT1 /DMMBT2222L, MMBT2222AL,SMMBT2222 ALGeneral Purpose TransistorsNPN SiliconFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageMMBT2222 LMMBT2222AL, SMMBT2222 ALVCEO3040 VdcCollector Base VoltageMMBT2222 LMMBT2222AL, SMMBT2222 ALVCBO6075 VdcEmitter Base VoltageMMBT2222 LMMBT2222AL, Current ContinuousIC600mAdcCollector Current Peak (Note 3)ICM1100mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board(Note 1) TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation AluminaSubstrate (Note 2) TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be FR 5 = Alumina = in. Reference SOA 23 CASE 318 STYLE 6 MARKING DIAGRAMxxx = 1P or M1BM= Date Code*G= Pb Free PackageCOLLECTOR31 BASE2 EMITTER(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing detailed ordering and shipping information in the packagedimensions section on page 6 of this data INFORMATION1213xxx , MMBT2222AL, CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222AV(BR)CEO3040 VdcCollector Base Breakdown Voltage (IC = 10 mAdc, IE = 0)MMBT2222 MMBT2222AV(BR)CBO6075 VdcEmitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0)MMBT2222 MMBT2222AV(BR) VdcCollector Cutoff Current (VCE = 60 Vdc, VEB(off) = Vdc)MMBT2222A, SMMBT2222 AICEX 10nAdcCollector Cutoff Current (VCB = 50 Vdc, IE = 0)MMBT2222(VCB = 60 Vdc, IE = 0)MMBT2222A, SMMBT2222A(VCB = 50 Vdc, IE = 0, TA = 125 C)MMBT2222(VCB = 60 Vdc, IE = 0, TA = 125 C)

3 MMBT2222A, SMMBT2222 AICBO Cutoff Current (VEB = Vdc, IC = 0)MMBT2222A, SMMBT2222 AIEBO 100nAdcBase Cutoff Current (VCE = 60 Vdc, VEB(off) = Vdc) MMBT2222A, SMMBT2222 AIBL 20nAdcON CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = 10 Vdc)(IC = mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc, TA = 55 C)MMBT2222A only(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)(IC = 150 mAdc, VCE = Vdc) (Note 4)(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)MMBT2222 MMBT2222A, SMMBT2222 AhFE35507535100503040 300 Collector Emitter Saturation Voltage (Note 4)(IC = 150 mAdc, IB = 15 mAdc)MMBT2222 MMBT2222A, SMMBT2222A(IC = 500 mAdc, IB = 50 mAdc)MMBT2222 MMBT2222A, SMMBT2222 AVCE(sat) Emitter Saturation Voltage (Note 4)(IC = 150 mAdc, IB = 15 mAdc)MMBT2222 MMBT2222A, SMMBT2222A(IC = 500 mAdc, IB = 50 mAdc)MMBT2222 MMBT2222A, SMMBT2222 AVBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product (Note 5)(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)MMBT2222 MMBT2222A, SMMBT2222 AfT250300 MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Cobo Capacitance(VEB = Vdc, IC = 0, f = MHz)MMBT2222 MMBT2222A, SMMBT2222 ACibo 3025pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222A(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222A(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222 Ahre 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222A(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222 Ahfe5075300375 MMBT2222L, MMBT2222AL, CHARACTERISTICS (TA = 25 C unless otherwise noted)

4 CharacteristicUnitMaxMinSymbolSMALL SIGNAL CHARACTERISTICSO utput Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, SMMBT2222A(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)MMBT2222A, Base Time Constant(IE = 20 mAdc, VCB = 20 Vdc, f = MHz)MMBT2222A, SMMBT2222 Arb, Cc 150psNoise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = kW, f = kHz)MMBT2222A, SMMBT2222 ANF CHARACTERISTICS (MMBT2222A only)Delay Time(VCC = 30 Vdc, VBE(off) = Vdc,IC = 150 mAdc, IB1 = 15 mAdc)td 10nsRise Timetr 25 Storage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc)ts 225nsFall Timetf 60 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width v 300 ms, Duty Cycle v fT is defined as the frequency at which |hfe| extrapolates to 1.

5 Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSS cope rise time < 4 ns*Total shunt capacitance of test jig, connectors, and oscilloscope.+16 V- 2 V< 2 to 100 ms,DUTY CYCLE kW+ 30 V200CS* < 10 pF+16 V-14 V0< 20 to 100 ms,DUTY CYCLE k+ 30 V200CS* < 10 pF- 4 700IC, COLLECTOR CURRENT (mA)Figure 3. DC Current GainhFE, DC CURRENT GAINTJ = 125 C25 C-55 CVCE = VVCE = 10 VMMBT2222L, MMBT2222AL, , COLLECTOR-EMITTER VOLTAGE (VOLTS) , BASE CURRENT (mA)Figure 4. Collector Saturation RegionTJ = 25 CIC = mA10 mA150 mA500 mAFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020050t, TIME (ns) = 10TJ = 25 Ctr @ VCC = 30 Vtd @ VEB(off) = Vtd @ VEB(off) = , TIME (ns) 6. Turn Off TimeIC, COLLECTOR CURRENT (mA) = 30 VIC/IB = 10IB1 = IB2TJ = 25 Ct s = ts - 1/8 tftfFigure 7. Frequency Effectsf, FREQUENCY (kHz) 8. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)NF, NOISE FIGURE (dB) , NOISE FIGURE (dB) = OPTIMUMRS = SOURCERS = RESISTANCEIC = mA, RS = 150 W500 mA, RS = 200 W100 mA, RS = kW50 mA, RS = kWf = kHzIC = 50 mA100 mA500 k k 10 k 20 k50 k 100 kMMBT2222L, MMBT2222AL, 9.

6 CapacitancesREVERSE VOLTAGE (VOLTS) (pF) 10. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA)7010020030050500fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 20 VTJ = 25 CFigure 11. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 12. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 13. Base Emitter Voltage vs. CollectorCurrentIC, COLLECTOR CURRENT (A) (sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V)IC/IB = 10150 C 55 C25 = 10150 C 55 C25 = 1 V150 C 55 C25 CFigure 14. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)- + (mV/ C)- RqVC for VCE(sat)RqVB for VBE- 200500 MMBT2222L, MMBT2222AL, 15. Safe Operating AreaVCE (Vdc) (A)Single Pulse Test@ TA = 25 CThermal Limit100 ms1 s10 ms1 msORDERING INFORMATIOND eviceSpecific Marking CodePackageShipping MMBT2222LT1GM1 BSOT 23(Pb Free)3000 / Tape & ReelMMBT2222 ALT1G,SMMBT2222 ALT1G1 PSOT 23(Pb Free)3000 / Tape & ReelMMBT2222LT3GM1 BSOT 23(Pb Free)10,000 / Tape & ReelMMBT2222 ALT3G,SMMBT2222 ALT3G1 PSOT 23(Pb Free)10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

7 *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and , MMBT2222AL, DIMENSIONSSOT 23 (TO 236)CASE 318 08 ISSUE ARDA1312 NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINT*VIEW VIEW 100 10T T3 XTOP VIEWSIDE VIEWEND : *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, 6:PIN 1. BASE2. EMITTER3. COLLECTORON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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