MMBT3904LT1DB - General Purpose Transistor

1 DATA Semiconductor Components Industries, LLC, 1994 August, 2021 Rev. 141 Publication Order Number:MMBT3904LT1/DGeneral Purpose TransistorNPN SiliconMMBT3904L, SMMBT3904 LFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC200mAdcCollector Current Peak (Note 3)ICM900mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board (Note 1) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage TemperatureTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be FR 5 = Alumina = in. Reference SOA For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 23 (TO 236)CASE 318 STYLE 6 MARKING DIAGRAM1AM = Specific Device CodeM= Date Code*G= Pb Free Package*Date Code orientation and/or overbar mayvary depending upon manufacturing location.(Note: Microdot may be in either location)12131AM MGGD evicePackageShipping ORDERING INFORMATIONMMBT3904LT3 GSMMBT3904LT3 GSOT 23(Pb Free)MMBT3904LT1 GSMMBT3904LT1 GSOT 23(Pb Free)3000 / Tape &Reel10,000 / Tape &ReelMMBT3904L, CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage (IC = mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage (IC = 10 mAdc, IE = 0)V(BR)CBO60 VdcEmitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0)V(BR) VdcBase Cutoff Current (VCE = 30 Vdc, VEB = Vdc)IBL 50nAdcCollector Cutoff Current (VCE = 30 Vdc, VEB = Vdc)ICEX 50nAdcON CHARACTERISTICS (Note 4)DC Current Gain(IC = mAdc, VCE = Vdc)

3 (IC = mAdc, VCE = Vdc)(IC = 10 mAdc, VCE = Vdc)(IC = 50 mAdc, VCE = Vdc)(IC = 100 mAdc, VCE = Vdc)HFE40701006030 300 Collector Emitter Saturation Voltage(IC = 10 mAdc, IB = mAdc)(IC = 50 mAdc, IB = mAdc)VCE(sat) Emitter Saturation Voltage(IC = 10 mAdc, IB = mAdc)(IC = 50 mAdc, IB = mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)fT300 MHzOutput Capacitance (VCB = Vdc, IE = 0, f = MHz)Cobo Capacitance (VEB = Vdc, IC = 0, f = MHz)Cibo Impedance (VCE = 10 Vdc, IC = mAdc, f = kHz) Feedback Ratio (VCE = 10 Vdc, IC = mAdc, f = kHz) 10 4 Small Signal Current Gain (VCE = 10 Vdc, IC = mAdc, f = kHz)hfe100400 Output Admittance (VCE = 10 Vdc, IC = mAdc, f = kHz) Figure (VCE = Vdc, IC = 100 mAdc, RS = k ohms, f = kHz)NF CHARACTERISTICSD elay Time(VCC = Vdc, VBE = Vdc,IC = 10 mAdc, IB1 = mAdc)td 35nsRise Timetr 35 Storage Time(VCC = Vdc,IC = 10 mAdc, IB1 = IB2 = mAdc)ts 200nsFall Timetf 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1. Delay and Rise TimeEquivalent Test CircuitFigure 2. Storage and Fall TimeEquivalent Test Circuit+3 V27510 k1N916CS < 4 pF*+3 V27510 kCS < 4 pF*< 1 ns- V+ V300 nsDUTY CYCLE = 2%< 1 ns- V + VDUTY CYCLE = 2%t1010 < t1 < 500 ms * Total shunt capacitance of test jig and connectorsMMBT3904L, TRANSIENT CHARACTERISTICSF igure 3. CapacitanceREVERSE BIAS VOLTAGE (VOLTS) 4. Charge DataIC, COLLECTOR CURRENT (mA) = 40 VIC/IB = 10Q, CHARGE (pC) 10203050 70 100200 CAPACITANCE (pF) 102030 = 25 CTJ = 125 CFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020030050050 Figure 6.

5 Rise TimeIC, COLLECTOR CURRENT (mA)TIME (ns) , RISE TIME (ns)Figure 7. Storage TimeIC, COLLECTOR CURRENT (mA)Figure 8. Fall TimeIC, COLLECTOR CURRENT (mA) , FALL TIME (ns)ft , STORAGE TIME (ns)s VCC = 40 VIC/IB = 10 VCC = 40 VIB1 = IB2IC/IB = 20IC/IB = 10IC/IB = 10tr @ VCC = Vtd @ VOB = 0 V40 V15 VIC/IB = 10IC/IB = 20IC/IB = 10IC/IB = 20t s = ts - 1/8 tfIB1 = IB2 MMBT3904L, AUDIO SMALL SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(VCE = Vdc, TA = 25 C, Bandwidth = Hz)Figure 9. f, FREQUENCY (kHz) 10. RS, SOURCE RESISTANCE (k OHMS)0NF, NOISE FIGURE (dB) , NOISE FIGURE (dB)f = kHzIC = mAIC = mAIC = 50 mAIC = 100 mASOURCE RESISTANCE = 200 WIC = mASOURCE RESISTANCE = 200 WIC = mASOURCE RESISTANCE = 500 WIC = 100 mASOURCE RESISTANCE = kIC = 50 mAh PARAMETERS(VCE = 10 Vdc, f = kHz, TA = 25 C)Figure 11.

6 Current GainIC, COLLECTOR CURRENT (mA)7010020030050 Figure 12. Output AdmittanceIC, COLLECTOR CURRENT (mA)h , CURRENT GAINh , OUTPUT ADMITTANCE ( mhos)Figure 13. Input ImpedanceIC, COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioIC, COLLECTOR CURRENT (mA) , VOLTAGE FEEDBACK RATIO (X 10 )reh , INPUT IMPEDANCE (k OHMS) , STATIC CHARACTERISTICSF igure 15. DC Current GainIC, COLLECTOR CURRENT (mA) , DC CURRENT = VTJ = +150 C+25 C- 55 CFigure 16. Collector Saturation RegionIB, BASE CURRENT (mA) , COLLECTOR EMITTER VOLTAGE (VOLTS) = mATJ = 25 mA30 mA100 mAMMBT3904L, 17. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 18. Base Emitter Saturation Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 19.

7 Base Emitter Voltage vs. CollectorCurrentIC, COLLECTOR CURRENT (A) (sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VBE(sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER VOLTAGE (V) = 10150 C25 C 55 CIC/IB = 10150 C25 C 55 CVCE = 1 V150 C25 C 55 CFigure 20. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)- (mV/ C)200- +25 C TO +125 C- 55 C TO +25 C+25 C TO +125 C- 55 C TO +25 CqVC FOR VCE(sat)qVB FOR VBE(sat)VCE (Vdc) (A)Single Pulse Test@ TA = 25 CThermal Limit100 ms1 s10 ms1 msFigure 21. Current Gain Bandwidth CurrentIC, COLLECTOR CURRENT (mA) , CURRENT GAIN BANDWIDTHPRODUCT (MHz)VCE = 1 VTA = 25 CFigure 22. Safe Operating AreaSOT 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic.

8 Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1. RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3.

9 ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2. CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2. SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1. GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1. CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2.

10 ANODE 3. ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular Purpose , nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 SOT 23 (TO 236) Semiconductor Components Industries, LLC, , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliatesand/or subsidiaries in the United States and/or other countries.