MUR8100E, MUR880E SWITCHMODE Power Rectifiers

1 Semiconductor Components Industries, LLC, 2008 June, 2008 Rev. 41 Publication Order Number:MUR8100E/DMUR8100E, MUR880 EMUR8100E is a Preferred DeviceSWITCHMODEtPower RectifiersUltrafast E Series with High ReverseEnergy CapabilityThe MUR8100 and MUR880E diodes are designed for use inswitching Power supplies, inverters and as free wheeling 20 mJ Avalanche Energy Guaranteed Excellent Protection Against Voltage Transients in SwitchingInductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175 C Operating Junction Temperature Popular TO 220 Package Epoxy Meets UL 94 V 0 @ in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V Pb Free Packages are Available*Mechanical Characteristics: Case: Epoxy, Molded Weight: Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max. for 10 Seconds*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, INFORMATIONMUR8100 ETO 22050 Units / RailULTRAFAST A, 800 V 1000 V50 Units / RailPreferred devices are recommended choices for future useand best overall 220(Pb Free)50 Units / 22050 Units / RailMUR880 EGTO 220(Pb Free)TO 220 ACCASE 221B431 MARKING DIAGRAMAY WWGU8xxxEKAA= Assembly LocationY= YearWW= Work WeekG=Pb Free PackageU8xxxE = Device Codexxx = 100 or 80KA= Diode PolarityMUR8100E, MUR880 RATINGSR atingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageMUR880 EMUR8100 EVRRMVRWMVR8001000 VAverage Rectified Forward Current(Rated VR, TC = 150 C) Total DeviceIF(AV) Repetitive Forward Current(Rated VR, Square Wave, 20 kHz, TC = 150 C)

2 IFM16 ANon Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM100 AOperating Junction and Storage Temperature RangeTJ, Tstg 65 to +175 CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice CHARACTERISTICSC haracteristicSymbolValueUnitMaximum Thermal Resistance, Junction to C/WELECTRICAL CHARACTERISTICSC haracteristicSymbolValueUnitMaximum Instantaneous Forward Voltage (Note 1)(iF = A, TC = 150 C)(iF = A, TC = 25 C) Instantaneous Reverse Current (Note 1)(Rated DC Voltage, TC = 100 C)(Rated DC Voltage, TC = 25 C)iR50025mAMaximum Reverse Recovery Time(IF = A, di/dt = 50 A/ms)(IF = A, iR = A, IREC = A)trr10075nsControlled Avalanche Energy(See Test Circuit in Figure 6)WAVAL20mJ1. Pulse Test: Pulse Width = 300 ms, Duty Cycle , MUR880 * The curves shown are typical for the highest voltage device in the voltage* grouping.

3 Typical reverse current for lower voltage selections can be* estimated from these same curves if VR is sufficiently below rated 1. Typical Forward VoltageFigure 2. Typical Reverse Current*Figure 3. Current Derating, CaseFigure 4. Current Derating, AmbientFigure 5. Power , INSTANTANEOUS VOLTAGE (VOLTS) , REVERSE VOLTAGE (VOLTS) , CASE TEMPERATURE ( C) , AMBIENT TEMPERATURE ( C) (AV), AVERAGE FORWARD CURRENT (AMPS) , INSTANTANEOUS FORWARD CURRENT (AMPS) ,000170180, AVERAGE FORWARD CURRENT (AMPS)IF(AV) (AV), AVERAGE Power DISSIPATION (WATTS) , REVERSE CURRENT ( A)R160140160200180m, AVERAGE FORWARD CURRENT (AMPS)F(AV) = 175 CSQUARE WAVEdcRATED VR APPLIEDSQUARE WAVEdcTJ = 25 C100 C150 CTJ = 175 C25 C100 = 16 C/WRqJA = 60 C/W(No Heat Sink)SQUARE WAVEdcSQUARE CMUR8100E, MUR880 6. Test CircuitFigure 7. Current Voltage Waveforms+VDDDUT40 mH COILVDILS1 IDThe unclamped inductive switching circuit shown inFigure 6 was used to demonstrate the controlled avalanchecapability of the new E series Ultrafast Rectifiers .

4 Amercury switch was used instead of an electronic switch tosimulate a noisy environment when the switch was S1 is closed at t0 the current in the inductor IL rampsup linearly; and energy is stored in the coil. At t1 the switchis opened and the voltage across the diode under test beginsto rise rapidly, due to di/dt effects, when this induced voltagereaches the breakdown voltage of the diode, it is clamped atBVDUT and the diode begins to conduct the full load currentwhich now starts to decay linearly through the diode, andgoes to zero at solving the loop equation at the point in time when S1is opened; and calculating the energy that is transferred tothe diode it can be shown that the total energy transferred isequal to the energy stored in the inductor plus a finite amountof energy from the VDD Power supply while the diode is inbreakdown (from t1 to t2) minus any losses due to finitecomponent resistances. Assuming the component resistiveelements are small Equation (1) approximates the totalenergy transferred to the diode.

5 It can be seen from thisequation that if the VDD voltage is low compared to thebreakdown voltage of the device, the amount of energycontributed by the supply during breakdown is small and thetotal energy can be assumed to be nearly equal to the energystored in the coil during the time when S1 was closed,Equation (2).The oscilloscope picture in Figure 8, shows theMUR8100E in this test circuit conducting a peak current ofone ampere at a breakdown voltage of 1300 V, and usingEquation (2) the energy absorbed by the MUR8100E isapproximately 20 it is not recommended to design for thiscondition, the new E series provides added protectionagainst those unforeseen transient viruses that can produceunexplained random failures in unfriendly [12LI2 LPK BVDUTBVDUTVDD WAVAL[12LI2 LPKF igure 8. Current Voltage WaveformsCHANNEL 2 1:VDUT500 BASE:20 (1):EQUATION (2):CH1CH2 REFREFCH1CH2 ACQUISITIONSSAVEREF SOURCE1217:33 HRSSTACKA20ms953 VVERT500V50mVMUR8100E, MUR880 , TIME (ms) , REVERSE VOLTAGE (VOLTS) , CAPACITANCE (pF) (t), TRANSIENT THERMAL = 25 C(NORMALIZED)Figure 9.]]

6 Thermal ResponseFigure 10. Typical CapacitanceD = PULSEZqJC(t) = r(t) RqJCRqJC = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)P(pk)t1t2 DUTY CYCLE, D = t1/t2 MUR8100E, MUR880 DIMENSIONSTO 220 TWO LEADCASE 221B 04 ISSUE EBRJDGLHQTUAKCS413 DIM MINMAXMIN :1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

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