NJD2873 Power Transistors - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2017 January, 2017 Rev. 181 Publication Order Number:NJD2873T4/DNJD2873 Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high gain audio amplifier High DC Current Gain Low Collector Emitter Saturation Voltage High Current Gain Bandwidth Product Epoxy Meets UL 94 V 0 @ in NJV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSR atingSymbolValueUnitCollector Base VoltageVCB50 VdcCollector Emitter VoltageVCEO50 VdcEmitter Base VoltageVEB5 VdcCollector Current ContinuousIC2 AdcCollector Current PeakICM3 AdcBase Device Dissipation@ TC = 25 CDerate above 25 CTotal Device Dissipation @ TA = 25 C*Derate above 25 COperating and Storage JunctionTemperature RangeTJ.

2 Tstg 65 to +175 CESD Human Body ModelHBM3 BVESD Machine ModelMMCVS tresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be ORDERING INFORMATIONSILICONPOWER TRANSISTORS2 AMPERES50 VOLTS15 WATTS For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 DIAGRAMA= Assembly LocationY= YearWW= Work WeekG= Pb Free DeviceDPAKCASE 369 CSTYLE (Pb Free)2,500 Units / ReelNJVNJD2873T4 GDPAK(Pb Free)

3 2,500 Units / Reel11 BASE3 EMITTERCOLLECTOR2, CHARACTERISTICSC haracteristicSymbolMaxUnitThermal ResistanceJunction to CaseJunction to Ambient (Note 1) C/W1. These ratings are applicable when surface mounted on the minimum pad sizes CHARACTERISTICS (TC = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage (Note 2)(IC = 10 mAdc, IB = 0)VCEO(sus)50 VdcCollector Cutoff Current(VCB = 50 Vdc, IE = 0)ICBO 100nAdcEmitter Cutoff Current (VBE = 5 Vdc, IC = 0)IEBO 100nAdcON CHARACTERISTICSDC Current Gain (Note 2)(IC = A, VCE = 2 V)(IC = 2 Adc, VCE = 2 Vdc)(IC = Adc, VCE = Vdc, 40 C TJ 150 C)

4 HFE1204080360 360 Collector Emitter Saturation Voltage (Note 2)(IC = 1 A, IB = A)VCE(sat) Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = Adc)VBE(sat) Emitter On Voltage (Note 2)(IC = 1 Adc, VCE = 2 Vdc)(IC = Adc, VCE = Vdc, 40 C TJ 150 C)VBE(on) CHARACTERISTICSC urrent Gain Bandwidth Product (Note 3)(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)fT65 MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Cob 80pFProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

5 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.3. fT = hfe CHARACTERISTICS 40 , COLLECTOR CURRENT (AMPS)VCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)Ic/Ib = 20 40 , COLLECTOR CURRENT (AMPS)VBE(sat), BASE EMITTER SATURATIONVOLTAGE (V)100 C25 CIc/Ib = 40 , COLLECTOR CURRENT (AMPS)hFE, DC CURRENT GAIN100 CVCE = V102525 Figure 1. Power DeratingT, TEMPERATURE ( C)050751001251501510520PD, Power DISSIPATION (WATTS)Figure 2. DC Current GainFigure 3.]

6 Collector Emitter Saturation VoltageFigure 4. Base Emitter Saturation VoltageFigure 5. Base Emitter Voltage25 C150 C175 C25 C100 C150 C175 C175 C150 C 40 CIC, COLLECTOR CURRENT (AMPS)VBE(on), BASE EMITTER VOLTAGE (V)100 C25 CVCE = V175 C150 6. Saturation RegionIB, BASE CURRENT (mA)VCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V) = 25 C10 mA100 mA500 mA1 AIC = 2 7. CapacitanceVR, REVERSE VOLTAGE (V)C, CAPACITANCE (pF)CiboCoboTA = 25 CFigure 8. Saturation RegionIC, COLLECTOR CURRENT (mA)ftau, CURRENT GAIN BANDWIDTHPRODUCT (MHz)1001101001000100010000 VCE = 10 VTA = 25 C1101001000100101 Figure 9.

7 CapacitanceVCE, COLLECTOR EMITTER VOLTAGE (V)IC, COLLECTOR CURRENT100001 mS10 mS100 mS1 St, TIME (ms) (t), TRANSIENT THERMALRqJC(t) = r(t) qJCRqJC = 10 C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) qJC(t)P(pk)t1t2 DUTY CYCLE, D = t1 (SINGLE PULSE)RESISTANCE (NORMALIZED)Figure 10. Thermal = DIMENSIONSDPAK (SINGLE GAUGE)CASE 369 CISSUE FSTYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. ( ) NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: THERMAL PAD CONTOUR OPTIONAL WITHIN DI-MENSIONS b3, L3 and DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS, OR BURRS.

8 MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALLNOT EXCEED INCHES PER DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC DATUMS A AND B ARE DETERMINED AT DATUMPLANE OPTIONAL MOLD mminches SCALE 3:1*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* BSCA1 HDETAIL ASEATINGPLANEABCL1 LHL2 GAUGEPLANEDETAIL AROTATED 90 CW5eBOTTOM VIEWZBOTTOM VIEWSIDE VIEWTOP VIEWALTERNATECONSTRUCTIONSNOTE 7 ZON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents.

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10 Consequential or incidental is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor . Typical parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customerapplication by customer s technical experts.