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NSIC2050JB - Constant Current Regulator and LED Driver

Semiconductor Components Industries, LLC, 2014 April, 2014 Rev. 11 Publication Order Number: NSIC2050JB /DNSIC2050 JBT3 GConstant Current Regulator & LED Driver for A/C off-lineApplications120 V, 50 mA + 15%, 3 W PackageThe linear Constant Current Regulator (CCR) is a simple, economicaland robust device designed to provide a cost effective solution forregulating Current in LEDs (similar to Constant Current Diode, CCD).The CCR is based on Self Biased Transistor (SBT) technology andregulates Current over a wide voltage range. It is designed with anegative temperature coefficient to protect LEDs from thermalrunaway at extreme voltages and CCR turns on immediately and is at 20% of regulation withonly V Vak.

The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost−effective solution for regulating current in LEDs (similar to Constant Current

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Transcription of NSIC2050JB - Constant Current Regulator and LED Driver

1 Semiconductor Components Industries, LLC, 2014 April, 2014 Rev. 11 Publication Order Number: NSIC2050JB /DNSIC2050 JBT3 GConstant Current Regulator & LED Driver for A/C off-lineApplications120 V, 50 mA + 15%, 3 W PackageThe linear Constant Current Regulator (CCR) is a simple, economicaland robust device designed to provide a cost effective solution forregulating Current in LEDs (similar to Constant Current Diode, CCD).The CCR is based on Self Biased Transistor (SBT) technology andregulates Current over a wide voltage range. It is designed with anegative temperature coefficient to protect LEDs from thermalrunaway at extreme voltages and CCR turns on immediately and is at 20% of regulation withonly V Vak.

2 It requires no external components allowing it to bedesigned as a high or low side 120 V anode cathode voltage rating is designed to withstandthe high peak voltage incurred in A/C offline applications. The highanode cathode voltage rating withstands surges common inAutomotive, Industrial and Commercial Signage Robust Power Package: W Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing Protecting LEDs UL94 V0 Certified SBT (Self Biased Transistor) Technology Negative Temperature Coefficient Also available in 30 mA (NSIC2030 JBT1G) and 20 mA(NSIC2020 JBT1G) NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements.

3 AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantTypical Applications and Reference/Design Documents Automobile: Chevron Side Mirror Markers, Cluster, Displays &Instruments Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, ChannelLettering Application Note AND8349/D Automotive CHMSL Application Notes AND8391/D, AND9008/D Power DissipationConsiderations Application Note AND8433/D A/C Application Application Note AND8492/D A/C Capacitive Drop Design Application Note AND9098/D Protecting a CCR from ISO 7637 2 Pulse 2A and Reverse Pulses Design Note DN05013 A/C Design Design Note DN06065 A/C Design with 403 AMARKING DIAGRAMD evicePackageShipping ORDERING INFORMATIONNSIC2050 JBT3 GSMB(Pb Free)2500 / Tape &Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

4 (Note: Microdot may be in either location)Ireg(SS) = 50 mA @ Vak = V2050J= Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageAYWW2050 JGGA node 2 Cathode 11212 NSVC2050 JBT3 GSMB(Pb Free)2500 / Tape &ReelNSIC2050 JBT3 RATINGS (TA = 25 C unless otherwise noted)RatingSymbolValueUnitAnode Cathode VoltageVak Max120 VReverse VoltageVR500mVOperating Junction and Storage Temperature RangeTJ, Tstg 55 to +175 CESD Rating:Human Body ModelMachine ModelESDC lass 3A (4000 V)Class C (400 V)Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitS teady State Current @ Vak = V (Note 1)Ireg(SS) Overhead (Note 2) Current @ Vak = V (Note 3)Ireg(P) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

5 Productperformance may not be indicated by the Electrical Characteristics if operated under different Ireg(SS) steady state is the voltage (Vak) applied for a time duration 80 sec, using 100 mm2 , 1 oz. Cu (or equivalent), in still Voverhead = Vin VLEDs. Voverhead is typical value for 80% Ireg(SS).3. Ireg(P) non repetitive pulse test. Pulse width t 360 1. CCR Voltage Current CharacteristicNSIC2050 JBT3 CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation (Note 1) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 1)R JA124 C/WThermal Reference, Junction to Tab (Note 1)R C/WTotal Device Dissipation (Note 2) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 2)R JA117 C/WThermal Reference, Junction to Tab (Note 2)R C/WTotal Device Dissipation (Note 3) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 3)R JA90 C/WThermal Reference, Junction to Tab (Note 3)

6 R C/WTotal Device Dissipation (Note 4) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 4)R JA85 C/WThermal Reference, Junction to Tab (Note 4)R C/WTotal Device Dissipation (Note 5) TA = 25 C Derate above 25 CPD194813mWmW/ CThermal Resistance, Junction to Ambient (Note 5)R JA77 C/WThermal Reference, Junction to Tab (Note 5)R C/WTotal Device Dissipation (Note 6) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 6)R JA73 C/WThermal Reference, Junction to Tab (Note 6)R C/WTotal Device Dissipation (Note 7) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 7)R C/WThermal Reference, Junction to Tab (Note 7)R C/WTotal Device Dissipation (Note 8) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 8)R C/WThermal Reference, Junction to Tab (Note 8)R C/WTotal Device Dissipation (Note 9) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 9)R C/WThermal Reference, Junction to Tab (Note 9)R C/WTotal Device Dissipation (Note 10) TA = 25 C Derate above 25 CThermal Resistance, Junction to Ambient (Note 10)

7 R JA60 C/WThermal Reference, Junction to Tab (Note 10)R JL16 C/WTotal Device Dissipation (Note 11) TA = 25 C Derate above 25 CPD300020mWmW/ CThermal Resistance, Junction to Ambient (Note 11)R JA50 C/WThermal Reference, Junction to Tab (Note 11)R JL16 C/WNOTE: Lead measurements are made by non contact methods such as IR with treated surface to increase emissivity to Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empiricalmeasurements and method of 100 mm2, 1 oz. Cu, still 100 mm2, 2 oz. Cu, still 300 mm2, 1 oz. Cu, still 300 mm2, 2 oz. Cu, still 500 mm2, 1 oz.

8 Cu, still 500 mm2, 2 oz. Cu, still 700 mm2, 1 oz. Cu, still 700 mm2, 2 oz. Cu, still 1000 mm2, 3 oz. Cu, still 400 mm2, PCB is DENKA K1, mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still 900 mm2, PCB is DENKA K1, mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still PERFORMANCE CURVES(Minimum FR 4 @ 100 mm2, 1 oz. Copper Trace, Still Air) mA/ CFigure 2. Steady State Current (Ireg(SS)) Cathode Voltage (Vak)Figure 3. Pulse Current (Ireg(P)) Cathode Voltage (Vak)Figure 4. Steady State Current vs. PulseCurrent TestingVak, ANODE CATHODE VOLTAGE (V)Ireg(P), PULSE Current (mA)Figure 5.

9 Current Regulation vs. TimeTIME (s)60504020100545658 Ireg, Current REGULATION (mA)30804952 Figure 6. Power Dissipation vs. AmbientTemperature @ TJ = 1755C: Small FootprintTA, AMBIENT TEMPERATURE ( C)PD, POWER DISSIPATION (mW)53555751 Vak, ANODE CATHODE VOLTAGE (V)9654310304050 Ireg(SS), STEADY STATE Current (mA)710DC Test Steady State, Still Air8202106070011 12 13 14 15109876542535406460424446 Ireg(P), PULSE Current (mA)Ireg(SS), STEADY STATE Current (mA)30485034550525448565658556521TA = 25 CNon Repetitive Pulse Test11 12 13 14 15526662505854 Vak @ VTA = 25 CVak @ VTA = 25 C606850TA = 55 CTA = 25 CTA = 85 C mA/ CTA = 125 C8060200 20 4050010002000250040500 mm2/2 oz300 mm2/1 oz100 mm2/2 oz150030000100 mm2/1 oz500 mm2/1 oz300 mm2/2 oz120100TJ(max)

10 , maximum die temperaturelimit 175 C (100 mm2, 1 oz Cu) mA/ C70FR 4 BoardFigure 7. Power Dissipation vs. AmbientTemperature @ TJ = 1755C: Large FootprintTA, AMBIENT TEMPERATURE ( C)8060200 20 40500100020002500 POWER DISSIPATION (mW)40 DENKA K1, 900 mm2/2 ozFR 4, 700 mm2/2 oz150030000FR 4, 1000 mm2/3 oz350040004500120100 DENKA K1, 400 mm2/2 ozFR 4, 700 mm2/1 ozNSIC2050 JBT3 INFORMATIONThe CCR is a self biased transistor designed to regulate thecurrent through itself and any devices in series with it. Thedevice has a slight negative temperature coefficient, asshown in Figure 2 Tri Temp. ( if the temperatureincreases the Current will decrease).


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