Transcription of NTE180 (PNP) & NTE181 (NPN) Silicon Power …
1 NTE180 (PNP) & NTE181 (NPN) Silicon Power TransistorHigh Power Audio AmplifierDescription:The NTE180 (PNP) and NTE181 (NPN) are Silicon complementary transistors in a TO3 type casedesigned for use as output devices in complementary audio amplifiers to 100 watts music Power :DHigh DC Current Gain: hFE = 25 100 @ IC = Safe Operating AreaAbsolute Maximum Ratings:Collector Emitter Voltage, VCER100V.. Collector Base Voltage, VCB100V.. Collector Emitter Voltage, VCEO90V.. Emitter Base Voltage, VEB4V.. Collector Current, IC30A.. Base Current.
2 Total Device Dissipation (TC = +25 C), PD200W.. Derate Above 25 C.. Operating Junction Temperature Range, TJ 65 to +200 C.. Storage Temperature Range, Tstg 65 to +200 C.. Thermal Resistance, Junction to Case, C/W.. Electrical Characteristics: (TC =+25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitOFF CharacteristicsCollector Emitter Breakdown VoltageV(BR)CERIC = 200mA, RBE = 100 , Note 1100 VCollector Emitter Sustaining VoltageVCEO(sus)IC = 200mA, Note 190 VCollector Base Cutoff CurrentICBOVCB = 100V, IE = 0 = 100V, IE = 0, TC = +150 C Base Cutoff CurrentIEBOVBE = 4V, IC = 0 1.
3 Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Cont d): (TC =+25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitON Characteristics (Note 1)DC Current GainhFEIC = , VCE = 2V25 100 Base Emitter ON VoltageVBE(on)IC = , VCE = 2V Emitter Saturation VoltageVCE(sat)IC = , IB = 750mA Emitter Saturation VoltageVBE(sat)IC = , IB = 750mA CharacteristicsCurrent Gain Bandwidth ProductfTIC = 1A, VCE = 10V, f = MHzNote 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Note 2.
4 NTE181MP is a matched pair of NTE181 with their DC Current Gain (hFE) matched to within10% of each 3. NTE180 MCP is a matched complementary pair containing 1 each of NTE180 (PNP) andNTE181 (NPN). ( ).875 ( )Dia ( ).430( ) ( ).312 ( ) ( ) ( ) ( ).525 ( ) R ( ) Dia(2 Holes).188 ( ) R Max
