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4 Semiconductor Components Industries, LLC, 2006 January, 2006 Rev. 31 Publication Order Number:MPF102/DMPF102 Preferred DevicesJFET VHF AmplifierN Channel DepletionFeatures Pb Free Package is Available*MAXIMUM RATINGSR atingSymbolValueUnitDrain Source VoltageVDS25 VdcDrain Gate VoltageVDG25 VdcGate Source VoltageVGS 25 VdcGate CurrentIG10mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CJunction Temperature RangeTJ125 CStorage Temperature RangeTstg 65 to +150 CMaximum ratings are those values beyond which device damage can ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.

5 *For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOURCE3 GATE1 DRAINTO 92 (TO 226AA)CASE 29 11 STYLE 5123 MARKING DIAGRAMMPF102 = Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageMPF102 AYWWGGP referred devices are recommended choices for future useand best overall INFORMATIONMPF1021000 Units/BulkMPF102 GTO 92(Pb Free)1000 Units/Bulk(Note: Microdot may be in either location)PackageTO 92 MPF102 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSGate Source Breakdown Voltage(IG = 10 mAdc, VDS = 0)V(BR)GSS 25 VdcGate Reverse Current(VGS = 15 Vdc, VDS = 0)(VGS = 15 Vdc, VDS = 0, TA = 100 C)IGSS Source Cutoff Voltage(VDS = 15 Vdc, ID = nAdc)VGS(off) Source Voltage(VDS = 15 Vdc, ID = mAdc)VGS CHARACTERISTICSZero Gate Voltage Drain Current (Note 1)(VDS = 15 Vdc, VGS = 0 Vdc) SIGNAL CHARACTERISTICSF orward Transfer Admittance (Note 1)(VDS = 15 Vdc, VGS = 0, f = kHz)(VDS = 15 Vdc, VGS = 0, f = 100 MHz) yfs 200016007500 mmhosInput Admittance(VDS = 15 Vdc, VGS = 0, f = 100 MHz)Re(yis)

6 800mmhosOutput Conductance(VDS = 15 Vdc, VGS = 0, f = 100 MHz)Re(yos) 200mmhosInput Capacitance(VDS = 15 Vdc, VGS = 0, f = MHz)Ciss Transfer Capacitance(VDS = 15 Vdc, VGS = 0, f = MHz)Crss Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.MPF102 , FREQUENCY (MHz)3010bis @ IDSSf, FREQUENCY (MHz) 1. Input Admittance (yis)Figure 2. Reverse Transfer Admittance (yrs)COMMON SOURCE CHARACTERISTICSADMITTANCE PARAMETERS(VDS = 15 Vdc, Tchannel = 25 C)f, FREQUENCY (MHz)20f, FREQUENCY (MHz)10 Figure 3. Forward Transfer Admittance (yfs)Figure 4. Output Admittance (yos)gis, INPUT CONDUCTANCE (mmhos) 70 100200 300500 7001000bis, INPUT SUSCEPTANCE (mmhos)gfs, FORWARD TRANSCONDUCTANCE (mmhos)|bfs|, FORWARD SUSCEPTANCE (mmhos)grs, REVERSE TRANSADMITTANCE (mmhos)brs, REVERSE SUSCEPTANCE (mmhos) , OUTPUT ADMITTANCE (mhos)bos, OUTPUT SUSCEPTANCE (mhos) 300500 700100010203050 70 100200 300500 70100200 300500 7001000bis @ IDSSgis @ IDSSgis @ IDSSbrs @ IDSSgrs @ IDSS, IDSSgfs @ IDSS|bfs| @ IDSS|bfs| @ IDSSbos @ IDSS and IDSSgos @ IDSSgos @ IDSSgfs @ IDSSMPF102 5.

7 S11sFigure 6. S12s0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 = IDSSID = IDSS100200300400600700800900500ID = IDSS, IDSS900500800700600500400300200100ID = IDSSID = IDSS100200300400900600700800900800600400 300200200100ID = IDSSID = IDSS900100500700300400500600700800 Figure 7.

8 S21sFigure 8. S22sCOMMON SOURCE CHARACTERISTICS S PARAMETERS(VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz)MPF102 , FREQUENCY (MHz)10gig @ IDSSf, FREQUENCY (MHz) 9. Input Admittance (yig)Figure 10. Reverse Transfer Admittance (yrg)COMMON GATE CHARACTERISTICSADMITTANCE PARAMETERS(VDG = 15 Vdc, Tchannel = 25 C)f, FREQUENCY (MHz)f, FREQUENCY (MHz)Figure 11. Forward Transfer Admittance (yfg)Figure 12. Output Admittance (yog)gig, INPUT CONDUCTANCE (mmhos) 70 100200 300500 7001000big, INPUT SUSCEPTANCE (mmhos)gfg, FORWARD TRANSCONDUCTANCE (mmhos)bfg, FORWARD SUSCEPTANCE (mmhos)grg, REVERSE TRANSADMITTANCE (mmhos)brg, REVERSE SUSCEPTANCE (mmhos) , OUTPUT ADMITTANCE (mmhos)bog, OUTPUT SUSCEPTANCE (mmhos) 300500 70010001020305070 100200 300500 100200 300500 7001000big @ IDSSbig @ IDSSgrg @ IDSSgfg @ IDSSgfg @ IDSSbrg @ IDSSbog @ IDSS, IDSSgog @ IDSSgog @ @ IDSSgig @ IDSS.

9 IDSSbfg @ IDSSMPF102 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 Figure 13. S11gFigure 14. S12gFigure 15. S21gFigure 16. = IDSSID = IDSS100200300400500600700800900900600700 800ID = IDSSID = IDSS100900100900ID = IDSSID = = IDSS, IDSSCOMMON GATE CHARACTERISTICS S PARAMETERS(VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz)MPF102 DIMENSIONSNOTES:1.

10 DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1 STYLE 5:PIN 1. DRAIN2. SOURCE3. GATETO 92 (TO 226)CASE 29 11 ISSUE ALON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.