P2N2222A - Amplifier Transistors

1 Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.

2 *For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 92(Pb Free)5000 Units/BulkDevicePackageShipping P2N2222 AGTO 92(Pb Free)2000/Tape & AmmoORDERING INFORMATIONCOLLECTOR12 BASE3 EMITTER For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 17 MARKING DIAGRAMP2N2222 AAYWWGGA= Assembly LocationY= YearWW = Work WeekG= Pb Free Package(Note: Microdot may be in either location)P2N2222 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO75 VdcEmitter Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR) VdcCollector Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)ICEX 10nAdcCollector Cutoff Current(VCB = 60 Vdc, IE = 0)(VCB = 60 Vdc, IE = 0, TA = 150 C)ICBO Cutoff Current(VEB = Vdc, IC = 0)IEBO 10nAdcCollector Cutoff Current(VCE = 10 V)ICEO 10nAdcBase Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)IBEX 20nAdcON CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = 10 Vdc)(IC = mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc, TA = 55 C)(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)(IC = 150 mAdc, VCE = Vdc) (Note 1)

3 (IC = 500 mAdc, VCE = 10 Vdc) (Note 1)hFE355075351005040 300 Collector Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product (Note 2)(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)CfT300 MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Cobo Capacitance(VEB = Vdc, IC = 0, f = MHz)Cibo 25pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hre 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hfe5075300375 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Base Time Constant(IE = 20 mAdc, VCB = 20 Vdc, f = MHz)rb Cc 150psNoise Figure(IC = 100 mAdc, VCE = 10 Vdc, RS = kW, f = kHz)NF Pulse Test: Pulse Width v 300 ms, Duty Cycle v fT is defined as the frequency at which |hfe| extrapolates to CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued)CharacteristicSymbolMinMaxUni tSWITCHING CHARACTERISTICSD elay Time(VCC = 30 Vdc, VBE(off) = Vdc,IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)td 10nsRise Timetr 25nsStorage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) (Figure 2)ts 225nsFall Timetf 60nsFigure 1.

4 Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSS cope rise time < 4 ns*Total shunt capacitance of test jig,connectors, and oscilloscope.+16 V- 2 V< 2 to 100 ms,DUTY CYCLE kW+ 30 V200CS* < 10 pF+16 V-14 V0< 20 to 100 ms,DUTY CYCLE k+ 30 V200CS* < 10 pF- 4 700IC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINTJ = 125 C25 C-55 CVCE = VVCE = 10 VFigure 3. DC Current GainP2N2222 , COLLECTOR-EMITTER VOLTAGE (VOLTS) , BASE CURRENT (mA)Figure 4. Collector Saturation RegionTJ = 25 CIC = mA10 mA150 mA500 mAFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020050t, TIME (ns) = 10TJ = 25 Ctr @ VCC = 30 Vtd @ VEB(off) = Vtd @ VEB(off) = , TIME (ns) 6. Turn Off TimeIC, COLLECTOR CURRENT (mA) = 30 VIC/IB = 10IB1 = IB2TJ = 25 Ct s = ts - 1/8 tftfFigure 7. Frequency Effectsf, FREQUENCY (kHz) 8. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)NF, NOISE FIGURE (dB) , NOISE FIGURE (dB) = OPTIMUMRS = SOURCERS = RESISTANCEIC = mA, RS = 150 W500 mA, RS = 200 W100 mA, RS = kW50 mA, RS = kWf = kHzIC = 50 mA100 mA500 k k 10 k 20 k50 k 100 kP2N2222 9.

5 CapacitancesREVERSE VOLTAGE (VOLTS) (pF) 10. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA)7010020030050500fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 20 VTJ = 25 CFigure 11. On VoltagesIC, COLLECTOR CURRENT (mA) , VOLTAGE (VOLTS)0TJ = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 VFigure 12. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)- + (mV/ C)- RqVC for VCE(sat)RqVB for 200500 V- 200500P2N2222 DIMENSIONSTO 92 (TO 226)CASE 29 11 ISSUE AMNOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN :1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKSTYLE 17:PIN 1.

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