P2N2222A Amplifier Transistors - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 92(Pb Free)5000 Units/BulkDevicePackageShipping P2N2222 AGTO 92(Pb Free)2000/Tape & AmmoORDERING INFORMATIONCOLLECTOR12 BASE3 EMITTER For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 17 MARKING DIAGRAMP2N2222 AAYWWGGA= Assembly LocationY= YearWW = Work WeekG= Pb Free Package(Note.)

2 Microdot may be in either location)P2N2222 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO75 VdcEmitter Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR) VdcCollector Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)ICEX 10nAdcCollector Cutoff Current(VCB = 60 Vdc, IE = 0)(VCB = 60 Vdc, IE = 0, TA = 150 C)ICBO Cutoff Current(VEB = Vdc, IC = 0)IEBO 10nAdcCollector Cutoff Current(VCE = 10 V)ICEO 10nAdcBase Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)IBEX 20nAdcON CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = 10 Vdc)(IC = mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc, TA = 55 C)(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)(IC = 150 mAdc, VCE = Vdc) (Note 1)(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)hFE355075351005040 300 Collector Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product (Note 2)(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)CfT300 MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Cobo Capacitance(VEB = Vdc, IC = 0, f = MHz)Cibo 25pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hre 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hfe5075300375 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Base Time Constant(IE = 20 mAdc, VCB = 20 Vdc, f = MHz)

3 Rb Cc 150psNoise Figure(IC = 100 mAdc, VCE = 10 Vdc, RS = kW, f = kHz)NF Pulse Test: Pulse Width v 300 ms, Duty Cycle v fT is defined as the frequency at which |hfe| extrapolates to CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued)CharacteristicSymbolMinMaxUni tSWITCHING CHARACTERISTICSD elay Time(VCC = 30 Vdc, VBE(off) = Vdc,IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)td 10nsRise Timetr 25nsStorage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) (Figure 2)ts 225nsFall Timetf 60nsFigure 1. Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSS cope rise time < 4 ns*Total shunt capacitance of test jig,connectors, and oscilloscope.+16 V- 2 V< 2 to 100 ms,DUTY CYCLE kW+ 30 V200CS* < 10 pF+16 V-14 V0< 20 to 100 ms,DUTY CYCLE k+ 30 V200CS* < 10 pF- 4 700IC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINTJ = 125 C25 C-55 CVCE = VVCE = 10 VFigure 3. DC Current GainP2N2222 , COLLECTOR-EMITTER VOLTAGE (VOLTS) , BASE CURRENT (mA)Figure 4.

4 Collector Saturation RegionTJ = 25 CIC = mA10 mA150 mA500 mAFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020050t, TIME (ns) = 10TJ = 25 Ctr @ VCC = 30 Vtd @ VEB(off) = Vtd @ VEB(off) = , TIME (ns) 6. Turn Off TimeIC, COLLECTOR CURRENT (mA) = 30 VIC/IB = 10IB1 = IB2TJ = 25 Ct s = ts - 1/8 tftfFigure 7. Frequency Effectsf, FREQUENCY (kHz) 8. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)NF, NOISE FIGURE (dB) , NOISE FIGURE (dB) = OPTIMUMRS = SOURCERS = RESISTANCEIC = mA, RS = 150 W500 mA, RS = 200 W100 mA, RS = kW50 mA, RS = kWf = kHzIC = 50 mA100 mA500 k k 10 k 20 k50 k 100 kP2N2222 9. CapacitancesREVERSE VOLTAGE (VOLTS) (pF) 10. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA)7010020030050500fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 20 VTJ = 25 CFigure 11. On VoltagesIC, COLLECTOR CURRENT (mA) , VOLTAGE (VOLTS)0TJ = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 VFigure 12.

5 Temperature CoefficientsIC, COLLECTOR CURRENT (mA)- + (mV/ C)- RqVC for VCE(sat)RqVB for 200500 V- 200500TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLES ON PAGE 2 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1:112312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3 NOTES:1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON Semiconductor STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository.

6 Printed versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 3TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLE 1:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 6:PIN 1. GATE2. SOURCE & SUBSTRATE3. DRAINSTYLE 11:PIN 1. ANODE2. CATHODE & ANODE3. CATHODESTYLE 16:PIN 1. ANODE2. GATE3. CATHODESTYLE 21:PIN 1. COLLECTOR2. EMITTER3. BASESTYLE 26:PIN 1. VCC2. GROUND 23. OUTPUTSTYLE 31:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. SOURCE2. DRAIN3. GATESTYLE 12:PIN 1. MAIN TERMINAL 12. GATE3. MAIN TERMINAL 2 STYLE 17:PIN 1. COLLECTOR2. BASE3. EMITTERSTYLE 22:PIN 1. SOURCE2. GATE3. DRAINSTYLE 27:PIN 1. MT2. SUBSTRATE3. MTSTYLE 32:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. ANODE3. CATHODESTYLE 8:PIN 1. DRAIN2. GATE3. SOURCE & SUBSTRATESTYLE 13:PIN 1. ANODE 12.

7 GATE3. CATHODE 2 STYLE 18:PIN 1. ANODE2. CATHODE3. NOT CONNECTEDSTYLE 23:PIN 1. GATE2. SOURCE3. DRAINSTYLE 28:PIN 1. CATHODE2. ANODE3. GATESTYLE 33:PIN 1. RETURN2. INPUT3. OUTPUTSTYLE 4:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 9:PIN 1. BASE 12. EMITTER3. BASE 2 STYLE 14:PIN 1. EMITTER2. COLLECTOR3. BASESTYLE 19:PIN 1. GATE2. ANODE3. CATHODESTYLE 24:PIN 1. EMITTER2. COLLECTOR/ANODE3. CATHODESTYLE 29:PIN 1. NOT CONNECTED2. ANODE3. CATHODESTYLE 34:PIN 1. INPUT2. GROUND3. LOGICSTYLE 5:PIN 1. DRAIN2. SOURCE3. GATESTYLE 10:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. ANODE 12. CATHODE3. ANODE 2 STYLE 20:PIN 1. NOT CONNECTED2. CATHODE3. ANODESTYLE 25:PIN 1. MT 12. GATE3. MT 2 STYLE 30:PIN 1. DRAIN2. GATE3. SOURCESTYLE 35:PIN 1. GATE2. COLLECTOR3. Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON Semiconductor STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository.

8 Printed versions are uncontrolled except when stamped CONTROLLED COPY in 2 OF 3 DOCUMENT NUMBER:98 ASB42022 BPAGE 3 OF 3 ISSUEREVISIONDATEAMADDED BENT LEAD TAPE & REEL VERSION. REQ. BY J. MAR 2007 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 11 AMCase Outline Number:29ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

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