TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, …

1 Semiconductor Components Industries, LLC, 2014 November, 2014 Rev. 81 Publication Order Number:TIP110/DTIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)Plastic Medium-PowerComplementary SiliconTransistorsDesigned for general purpose amplifier and low speed High DC Current Gain hFE= 2500 (Typ) @ IC = Adc Collector Emitter Sustaining Voltage @ 30 mAdc VCEO(sus)= 60 Vdc (Min) TIP110, TIP115= 80 Vdc (Min) TIP111, TIP116 = 100 Vdc (Min) TIP112 , TIP117 Low Collector Emitter Saturation Voltage VCE(sat)= Vdc (Max) @ IC = Adc Monolithic Construction with Built in Base Emitter Shunt Resistors Pb Free Packages are Available**For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 220 ABCASE 221 ASTYLE 1 MARKINGDIAGRAMDARLINGTON2 AMPERECOMPLEMENTARY SILICONPOWER TRANSISTORS60 80 100 VOLTS, 50 Device Codex= 0, 1, 2, 5, 6, or 7A= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageTIP11xGAYWWSee detailed ordering and shipping information on page 3 ofthis data INFORMATIONSTYLE 1:PIN 1.

2 BASE2. COLLECTOR3. EMITTER4. COLLECTORTIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) RATINGSR atingSymbolTIP110,TIP115 TIP111, TIP116 TIP112 ,TIP117 UnitCollector Emitter VoltageVCEO6080100 VdcCollector Base VoltageVCB6080100 VdcEmitter Base Current Continuous CurrentIB50mAdcTotal Power Dissipation @ TC = 25 CDerate above 25 CTotal Power Dissipation @ TA = 25 CDerate above 25 CUnclamped Inductive Load Energy Figure 13E25mJOperating and Storage JunctionTJ, Tstg 65 to + 150 CTHERMAL CHARACTERISTICSC haracteristicsSymbolMaxUnitThermal Resistance, Junction to C/WThermal Resistance, Junction to C/WStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS (TC = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage (Note 1)(IC = 30 mAdc, IB = 0)TIP110, TIP115 TIP111, TIP116 TIP112 , TIP117 VCEO(sus)6080100 VdcCollector Cutoff Current(VCE = 30 Vdc, IB = 0)TIP110, TIP115(VCE = 40 Vdc, IB = 0)TIP111, TIP116(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 ICEO Cutoff Current(VCB = 60 Vdc, IE = 0)TIP110, TIP115(VCB = 80 Vdc, IE = 0)TIP111, TIP116(VCB = 100 Vdc, IE = 0) TIP112 , TIP117 ICBO Cutoff Current(VBE = Vdc, IC = 0)IEBO CHARACTERISTICS (Note 1)DC Current Gain(IC = Adc, VCE = Vdc)(IC = Adc, VCE = Vdc)hFE1000500 Collector Emitter Saturation Voltage (IC = Adc, IB = mAdc)VCE(sat) Emitter On Voltage (IC = Adc, VCE = Vdc)VBE(on) CHARACTERISTICSS mall Signal Current Gain (IC = Adc, VCE = 10 Vdc, f = MHz)

3 Hfe25 Output Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 Cob 200100pFProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 1. Darlington Circuit SchematicBASEEMITTERCOLLECTOR k 120 BASEEMITTERCOLLECTOR k 120 ORDERING INFORMATIOND evicePackageShippingTIP110TO 22050 Units / RailTIP110 GTO 220(Pb Free)50 Units / RailTIP111TO 22050 Units / RailTIP111 GTO 220(Pb Free)50 Units / RailTIP112TO 22050 Units / RailTIP112 GTO 220(Pb Free)50 Units / RailTIP115TO 22050 Units / RailTIP115 GTO 220(Pb Free)50 Units / RailTIP116TO 22050 Units / RailTIP116 GTO 220(Pb Free)50 Units / RailTIP117TO 22050 Units / RailTIP117 GTO 220(Pb Free)50 Units / Rail0020406080100120160 Figure 2.

4 Power DeratingT, TEMPERATURE ( C)PD, POWER DISSIPATION (WATTS) , TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 3. Switching Times Test 4. Switching TimesIC, COLLECTOR CURRENT (AMP)t, TIME ( s) @ VBE(off) = 0V2approx+ VV1approx-12 Vtr, tf 10 nsDUTY CYCLE = ms0RB51D1+ VVCC- 30 VRCTUT k 60 SCOPEfor td and tr, D1 is disconnectedand V2 = 0, RB and RC are variedto obtain desired test NPN test circuit, reverse diode,polarities and input & RC VARIED TO OBTAIN DESIRED CURRENT LEVELSD1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mAVCC = 30 VIC/IB = = IB2TJ = 25 CFigure 5. Thermal Responset, TIME (ms) (t), TRANSIENT THERMAL RESISTANCE(NORMALIZED) k500 ZqJC(t) = r(t) RqJCRqJC = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)P(pk)t1t2 DUTY CYCLE, D = t1/t2D = , TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 6. TIP115, 116, 117 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 BONDING WIRE LIMITEDTHERMALLY LIMITED@ TC = 25 C (SINGLE PULSE)IC, COLLECTOR CURRENT (AMPS)TJ = 150 Cdc1 ms40 TIP115 TIP116 TIP117 SECONDARY BREAKDOWN LIMITED5 msCURVES APPLY BELOWRATED 7.

5 TIP110, 111, 112 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100IC, COLLECTOR CURRENT (AMPS)60 TIP110 TIP111 TIP112 BONDING WIRE LIMITEDTHERMALLY LIMITED@ TC = 25 C (SINGLE PULSE)TJ = 150 CSECONDARY BREAKDOWN LIMITEDCURVES APPLY BELOWRATED VCEOdcACTIVE REGION SAFE OPERATING AREAT here are two limitations on the power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; , the transistor must not be subjected to greaterdissipation than the curves data of Figures 6 and 7 is based on TJ(pk) = 150 C;TC is variable depending on conditions. Second breakdownpulse limits are valid for duty cycles to 10% provided TJ(pk)< 150 C. TJ(pk) may be calculated from the data in Figure high case temperatures, thermal limitations will reducethe power that can be handled to values less than thelimitations imposed by second , REVERSE VOLTAGE (VOLTS) , CAPACITANCE (pF)7030TC = 25 CCib50 CobPNPNPNF igure 8.

6 1020 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) , COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 9. DC Current GainIC, COLLECTOR CURRENT (AMP) , DC CURRENT kVCE = , 111, 112 PNPTIP115, 116, 117 Figure 10. Collector Saturation , BASE CURRENT (mA) = ATJ = 25 , COLLECTOR CURRENT (AMP) = 25 CVBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250V, VOLTAGE (VOLTS)Figure 11. On VoltagesVBE @ VCE = kTJ = 125 C25 C- 55 C50IC, COLLECTOR CURRENT (AMP)hFE, DC CURRENT GAINVCE = VTJ = 125 C25 C- 55 AIB, BASE CURRENT (mA)TJ = 25 CIC, COLLECTOR CURRENT (AMP)V, VOLTAGE (VOLTS)TJ = 25 CVBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 VBE @ VCE = = , TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 12. Temperature CoefficientsNPNTIP110, 111, 112 PNPTIP115, 116, 117 Figure 13. Collector Cut-Off RegionIC, COLLECTOR CURRENT (AMP)+ , TEMPERATURE COEFFICIENTS (mV/ C) 0- *APPLIES FOR IC/IB hFE/3* qVC for VCE(sat)qVC for C to 150 C- 55 C to 25 C to 150 C- 55 C to 25 CIC, COLLECTOR CURRENT (AMP)+ , TEMPERATURE COEFFICIENTS (mV/ C) 0- *APPLIES FOR IC/IB hFE/3* qVC for VCE(sat)qVC for C to 150 C- 55 C to 25 C to 150 C- 55 C to 25 C105- , BASE EMITTER VOLTAGE (VOLTS)- - + + + + + + = 30 VTJ = 150 C100 C25 CREVERSEFORWARD+ , COLLECTOR CURRENT ( A) IC105- , BASE EMITTER VOLTAGE (VOLTS)- + + + + + + = 30 VTJ = 150 C100 C25 CREVERSEFORWARD+ , COLLECTOR CURRENT ( A) ICFigure 14.

7 Inductive Load SwitchingNote A: Input pulse width is increased until ICM = A,NPN test shown; for PNP testreverse all polarity and use MJE224 A0 V- 5 Vtw ms (SEE NOTE A)INPUTVOLTAGECOLLECTORCURRENTCOLLECTORV OLTAGEVCER0 V20 V100 msVCE(sat)INPUTMJE25450 W50 WRBB12 kWRBB2100 WVBB2 = 0 TUTVCE MONITOR100 mHVCC = 20 VICMONITORRS = WTEST CIRCUITVOLTAGE AND CURRENT WAVEFORMS+-VBB1 = 10 V+-TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) DIMENSIONSTO 220 CASE 221A 09 ISSUE AHNOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES MINMAXMIN T CSTURJSTYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

8 A listing of SCILLC s product/patent coverage may be accessedat SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representationor guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheetsand/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for eachcustomer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whichthe failure of the SCILLC product could create a situation where personal injury or death may occur.

9 Should Buyer purchase or use SCILLC products for any such unintended orunauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicablecopyright laws and is not for resale in any ORDERING INFORMATIONN. American Technical Support: 800 282 9855 Toll FreeUSA/CanadaEurope, Middle East and Africa Technical Support:Phone: 421 33 790 2910 Japan Customer Focus CenterPhone: 81 3 5817 1050 TIP110/DLITERATURE FULFILLMENT:Literature Distribution Center for ON Box 5163, Denver, Colorado 80217 USAP hone: 303 675 2175 or 800 344 3860 Toll Free USA/CanadaFax: 303 675 2176 or 800 344 3867 Toll Free USA/CanadaEmail: Semiconductor Website: Literature: additional information, please contact your localSales Representativ