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2N7002L, 2V7002L Small Signal MOSFET

Semiconductor Components Industries, LLC, 2013 October, 2016 Rev. 81 Publication Order Number: 2n7002l /D2N7002L, 2V7002 LSmall Signal MOSFET60 V, 115 mA, N Channel SOT 23 Features 2V Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP Capable ( 2V7002L ) These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSR atingSymbolValueUnitDrain Source VoltageVDSS60 VdcDrain Gate Voltage (RGS = MW)VDGR60 VdcDrain Current Continuous TC = 25 C (Note 1) Continuous TC = 100 C (Note 1) Pulsed (Note 2)IDIDIDM 115 75 800mAdcGate Source Voltage Continuous Non repetitive (tp 50 ms)VGSVGSM 20 40 VdcVpkTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR

2n7002l, 2v7002l www.onsemi.com 3 typical electrical characteristics i d, drain current (amps) r ds(on), static drain-source on-resistance (normalized)

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Transcription of 2N7002L, 2V7002L Small Signal MOSFET

1 Semiconductor Components Industries, LLC, 2013 October, 2016 Rev. 81 Publication Order Number: 2n7002l /D2N7002L, 2V7002 LSmall Signal MOSFET60 V, 115 mA, N Channel SOT 23 Features 2V Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP Capable ( 2V7002L ) These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSR atingSymbolValueUnitDrain Source VoltageVDSS60 VdcDrain Gate Voltage (RGS = MW)VDGR60 VdcDrain Current Continuous TC = 25 C (Note 1) Continuous TC = 100 C (Note 1) Pulsed (Note 2)IDIDIDM 115 75 800mAdcGate Source Voltage Continuous Non repetitive (tp 50 ms)VGSVGSM 20 40 VdcVpkTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board(Note 3)

2 TA = 25 CDerate above 25 CThermal Resistance, Junction to C C/WTotal Device Dissipation(Note 4) Alumina Substrate, TA = 25 CDerate above 25 CThermal Resistance, Junction to C C/WJunction and Storage TemperatureTJ, Tstg 55 to+150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be The Power Dissipation of the package may result in a lower continuous Pulse Test.

3 Pulse Width 300 ms, Duty Cycle FR 5 = x x Alumina = x x in ORDERING INFORMATION2N7002LT1 GSOT 23(Pb Free)3000 Tape & ReelN ChannelSOT 23 CASE 318 STYLE 21 MARKINGDIAGRAM2132N7002LT3G10,000 Tape & 23(Pb Free)3000 Tape & Reel2V7002LT3G10,000 Tape & Reel60 W @ 10 V,500 mARDS(on) MAX115 mAID MAXV(BR)DSS For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.*Not for new MGG(Note: Microdot may be in either location)*Date Code orientation and/or position mayvary depending upon manufacturing Device CodeM= Date Code*G= Pb Free Package2N7002LT1H*3000 Tape & Reel2N7002L, CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSD rain Source Breakdown Voltage(VGS = 0, ID = 10 mAdc)V(BR)DSS60 VdcZero Gate Voltage Drain CurrentTJ = 25 C(VGS = 0, VDS = 60 Vdc)TJ = 125 CIDSS Body Leakage Current, Forward(VGS = 20 Vdc)

4 IGSSF 100nAdcGate Body Leakage Current, Reverse(VGS = 20 Vdc)IGSSR 100nAdcON CHARACTERISTICS (Note 5)Gate Threshold Voltage(VDS = VGS, ID = 250 mAdc)VGS(th) State Drain Current(VDS VDS(on), VGS = 10 Vdc)ID(on)500 mAStatic Drain Source On State Voltage(VGS = 10 Vdc, ID = 500 mAdc)(VGS = Vdc, ID = 50 mAdc)VDS(on) Drain Source On State Resistance(VGS = 10 V, ID = 500 mAdc)TC = 25 CTC = 125 C(VGS = Vdc, ID = 50 mAdc)TC = 25 CTC = 125 CrDS(on) Transconductance(VDS VDS(on), ID = 200 mAdc)gFS80 mSDYNAMIC CHARACTERISTICSI nput Capacitance(VDS = 25 Vdc, VGS = 0, f = MHz)Ciss 50pFOutput Capacitance(VDS = 25 Vdc, VGS = 0, f = MHz)Coss 25pFReverse Transfer Capacitance(VDS = 25 Vdc, VGS = 0, f = MHz)Crss CHARACTERISTICS (Note 5)Turn On Delay Time(VDD = 25 Vdc, ID ^ 500 mAdc,RG = 25 W, RL = 50 W, Vgen = 10 V)td(on) 20nsTurn Off Delay Timetd(off) 40nsBODY DRAIN DIODE RATINGSD iode Forward On Voltage(IS = mAdc, VGS = 0 V)VSD Current Continuous(Body Diode)

5 IS 115mAdcSource Current PulsedISM 800mAdc5. Pulse Test: Pulse Width 300 ms, Duty Cycle , ELECTRICAL CHARACTERISTICSID, DRAIN CURRENT (AMPS)rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE(NORMALIZED)VGS(th), THRESHOLD VOLTAGE (NORMALIZED)ID, DRAIN CURRENT (AMPS) , DRAIN SOURCE VOLTAGE (VOLTS)Figure 1. Ohmic , GATE SOURCE VOLTAGE (VOLTS)Figure 2. Transfer 60- 20+ 20+ 60+ 100+ 140- 60- 20+ 20+ 60+ 100+ 140T, TEMPERATURE ( C)Figure 3. Temperature versus StaticDrain Source On ResistanceT, TEMPERATURE ( C)Figure 4.

6 Temperature versus GateThreshold VoltageTA = 25 CVGS = 10 V9 V8 V7 V6 V4 V3 V5 VVDS = 10 V- 55 C25 C125 CVGS = 10 VID = 200 mAVDS = VGSID = mA2N7002L, DIMENSIONSSOT 23 (TO 236)CASE 318 08 ISSUE ARSTYLE 21:PIN 1. GATE2. SOURCE3. DRAINDA1312 NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE VIEW 100 10T T3 XTOP VIEWSIDE VIEWEND VIEWSOLDERING.

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