1N5820 and 1N5822 are Preferred Devices Axial …

1 Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 101 Publication Order Number: 1N5820 /D1N5820, 1N5821, 1N58221N5820 and 1N5822 are Preferred DevicesAxial Lead RectifiersThis series employs the Schottky Barrier principle in a large areametal-to-silicon power diode. State-of-the-art geometry featureschrome barrier metal, epitaxial construction with oxide passivationand metal overlap contact. Ideally suited for use as rectifiers inlow-voltage, high-frequency inverters, free wheeling diodes, andpolarity protection Extremely Low VF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction Shipped in plastic bags, 500 per bag Available in Tape and Reel, 1500 per reel, by adding a RL'' suffix tothe part number Pb-Free Packages are Available*Mechanical Characteristics: Case: Epoxy, Molded Weight: Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max.

2 For 10 Seconds Polarity: Cathode indicated by Polarity Band*For additional information on our Pb-Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, LEADCASE 267-05(DO-201AD)STYLE 1 SCHOTTKY AMPERES20, 30, 40 VOLTSP referred Devices are recommended choices for future useand best overall DIAGRAMSee detailed ordering and shipping information on page 3 ofthis data Assembly Location1N582x = Device Codex= 0, 1, or 2YY= YearWW= Work WeekG= Pb-Free Package(Note: Microdot may be in either location)A1N582xYYWWGG1N5820, 1N5821, 1N5822 RATINGSR atingSymbol1N58201N58211N5822 UnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR203040 VNon-Repetitive Peak Reverse VoltageVRSM243648 VRMS Reverse VoltageVR(RMS)142128 VAverage Rectified Forward Current (Note 1)VR(equiv) VR(dc), TL = 95 C(RqJA = 28 C/W, Board Mounting, see Note 5) TemperatureRated VR(dc), PF(AV) = 0 RqJA = 28 C/WTA908580 CNon-Repetitive Peak Surge Current(Surge applied at rated load conditions, half wave, single phase60 Hz, TL = 75 C)IFSM80 (for one cycle)AOperating and Storage Junction Temperature Range(Reverse Voltage applied)TJ, Tstg-65 to +125 CStresses exceeding Maximum Ratings may damage the device.

3 Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice reliability.* thermal CHARACTERISTICS (Note 5)CharacteristicSymbolMaxUnitThermal Resistance, Junction-to-AmbientRqJA28 C/W*ELECTRICAL CHARACTERISTICS (TL = 25 C unless otherwise noted) (Note 1)CharacteristicSymbol1N58201N58211N5822 UnitMaximum Instantaneous Forward Voltage (Note 2)(iF = Amp)(iF = Amp)(iF = Amp) Instantaneous Reverse Current@ Rated dc Voltage (Note 2)TL = 25 CTL = 100 Lead Temperature reference is cathode lead 1/32 from Pulse Test: Pulse Width = 300 ms, Duty Cycle = *Indicates JEDEC Registered Data for , 1N5821, 1N5822 INFORMATIOND evicePackageShipping 1N5820 Axial Lead500 Units/Bag1N5820 GAxial Lead(Pb-Free)500 Units/Bag1N5820 RLAxial Lead1500/Tape & Reel1N5820 RLGA xial Lead(Pb-Free)1500/Tape & Reel1N5821 Axial Lead500 Units/Bag1N5821 GAxial Lead(Pb-Free)500 Units/Bag1N5821 RLAxial Lead1500/Tape & Reel1N5821 RLGA xial Lead(Pb-Free)1500/Tape & Reel1N5822 Axial Lead500 Units/Bag1N5822 GAxial Lead(Pb-Free)500 Units/Bag1N5822 RLAxial Lead1500/Tape & Reel1N5822 RLGA xial Lead(Pb-Free)

4 1500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 , 1N5821, 1N5822 3 DETERMINING MAXIMUM RATINGSR everse power dissipation and the possibility of thermalrunaway must be considered when operating this rectifier atreverse voltages above VRWM. Proper derating may beaccomplished by use of equation (1).TA(max) = TJ(max) RqJAPF(AV) RqJAPR(AV)(1)where TA(max) = Maximum allowable ambient temperatureTJ(max) = Maximum allowable junction temperature(125 C or the temperature at which thermalrunaway occurs, whichever is lowest)PF(AV) = Average forward power dissipationPR(AV) = Average reverse power dissipationRqJA = Junction-to-ambient thermal resistanceFigures 1, 2, and 3 permit easier use of equation (1) bytaking reverse power dissipation and thermal runaway intoconsideration.

5 The figures solve for a reference temperatureas determined by equation (2).TR = TJ(max) RqJAPR(AV)(2)Substituting equation (2) into equation (1) yields:TA(max) = TR RqJAPF(AV)(3)Inspection of equations (2) and (3) reveals that TR is theambient temperature at which thermal runaway occurs orwhere TJ = 125 C, when forward power is zero. Thetransition from one boundary condition to the other isevident on the curves of Figures 1, 2, and 3 as a differencein the rate of change of the slope in the vicinity of 115 C. Thedata of Figures 1, 2, and 3 is based upon dc conditions. Foruse in common rectifier circuits, Table 1 indicates suggestedfactors for an equivalent dc voltage to use for conservativedesign, that is:VR(equiv) = V(FM) F(4)The factor F is derived by considering the properties of thevarious rectifier circuits and the reverse characteristics ofSchottky : Find TA(max) for 1N5821 operated in a12-volt dc supply using a bridge circuit with capacitive filtersuch that IDC = A (IF(AV) = A), I(FM)/I(AV) = 10, InputVoltage = 10 V(rms), RqJA = 40 1.

6 Find VR(equiv). Read F = from Table 1, VR(equiv) = ( ) (10) ( ) = 2. Find TR from Figure 2. Read TR = 108 C@ VR = V and RqJA = 40 3. Find PF(AV) from Figure 6. **Read PF(AV) = W@I(FM)I(AV) 10 and IF(AV) 4. Find TA(max) from equation (3).TA(max) = 108 ( ) (40) = 74 C.**Values given are for the 1N5821. Power is slightly lowerfor the 1N5820 because of its lower forward voltage, andhigher for the 1N5822 . Variations will be similar for theMBR-prefix Devices , using PF(AV) from Figure 1. Values for Factor FCircuitHalf WaveFull Wave, BridgeFull Wave,Center Tapped* LoadResistiveCapacitive*ResistiveCapacit iveResistiveCapacitiveSine *Note that VR(PK) Vin(PK). Use line to center tap voltage for , 1N5821, 1N5822 1. Maximum Reference Temperature1N5820 Figure 2. Maximum Reference Temperature1N5821 Figure 3.

7 Maximum Reference Temperature1N5822 Figure 4. Steady-State thermal , REVERSE VOLTAGE (VOLTS) , REVERSE VOLTAGE (VOLTS)125115105958575L, LEAD LENGTH (INCHES)1 , REFERENCE TEMPERATURE ( C)TRJL, thermal ( C/W) BOTH LEADS TO HEATSINK,EQUAL LENGTHMAXIMUMTYPICAL, REFERENCE TEMPERATURE ( C)R RqJA ( C/W) = , REVERSE VOLTAGE (VOLTS)115105TR, REFERENCE TEMPERATURE ( C) RqJA ( C/W) = ( C/W) = (t), TRANSIENT thermal RESISTANCE(NORMALIZED) k10 , TIME (ms) LENGTH = 1/4 PpkPpktpt1 TIMEDUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of anequivalent square power = Ppk RqJL [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where:DTJL = the increase in junction temperature above the lead (t) = normalized value of transient thermal resistance at time, t, :r(t1 + tp) = normalized value of transient thermal resistance at timet1 + tp, 5.

8 thermal Response20 kThe temperature of the lead should be measured using a ther mocouple placed on the lead as close as possible to the tie thermal mass connected to the tie point is normally largeenough so that it will not significantly respond to heat surgesgenerated in the diode as a result of pulsed operation oncesteady-state conditions are achieved. Using the measuredvalue of TL, the junction temperature may be determined by:TJ = TL + DTJL1N5820, 1N5821, 1N5822 (AV), AVERAGE FORWARD CURRENT (AMP) , AVERAGE POWER DISSIPATION (WATTS)F(AV) 10 Figure 6. Forward Power Dissipation 1N5820 -22dcSQUARE WAVETJ 125 CSINE WAVEI(FM)I(AV) p (Resistive Load)CapacitiveLoads (A)TA(K)TL(A)TC(A)TJTC(K)TL(K)PDRqS(A)Rq L(A)RqJ(A)RqJ(K)RqL(K)RqS(K)NOTE 4 - APPROXIMATE thermal CIRCUIT MODELUse of the above model permits junction to lead thermalresistance for any mounting configuration to be found.

9 Fora given total lead length, lowest values occur when one sideof the rectifier is brought as close as possible to the heat in the model signify:TA = Ambient TemperatureTC = Case TemperatureTL = Lead TemperatureTJ = Junction TemperatureRqS = thermal Resistance, Heatsink to AmbientRqL = thermal Resistance, Lead-to-HeatsinkRqJ = thermal Resistance, Junction-to-CasePD = Total Power Dissipation = PF + PRPF = Forward Power DissipationPR = Reverse Power Dissipation(Subscripts (A) and (K) refer to anode and cathode sides,respectively.) Values for thermal resistance componentsare:RqL = 42 C/W/in typically and 48 C/W/in maximumRqJ = 10 C/W typically and 16 C/W maximumThe maximum lead temperature may be found as follows:TL = TJ(max) n TJLwhere n TJL RqJL PDTYPICAL VALUES FOR RqJA IN STILL AIRData shown for thermal resistance junction-to-ambient (RqJA)for the mountings shown is to be used as typical guideline valuesfor preliminary engineering, or in case the tie point temperaturecannot be Length, L (in)

10 1/81/41/23/4 RqJA50515355 C/W C/W C/W5859616328 NOTE 5 MOUNTING DATAM ounting Method Board where availablecopper surface is Method Board with2-1/2, x 2-1/2,copper GROUNDPLANEVECTOR PUSH-INTERMINALS T-28 Mounting Method 2 LL LL L = 1/2 1N5820 , 1N5821, 1N5822 C25 C100 CTJ = 125 CNOTE 6 HIGH FREQUENCY OPERATIONS ince current flow in a Schottky rectifier is the result ofmajority carrier conduction, it is not subject to junction di ode forward and reverse recovery transients due to minoritycarrier injection and stored charge. Satisfactory circuit ana lysis work may be performed by using a model consistingof an ideal diode in parallel with a variable capacitance.(See Figure 10.)Figure 7. Typical Forward VoltageFigure 8. Maximum Non-Repetitive SurgeCurrentFigure 9.