BSS138L, BVSS138L Power MOSFET 200 mA, 50 V

1 Semiconductor Components Industries, LLC, 2016 January, 2018 Rev. 111 Publication Order Number:BSS138LT1/DBSS138L, BVSS138 LPower MOSFET200 mA, 50 VN Channel SOT 23 Typical applications are DC DC converters, Power management inportable and battery powered products such as computers, printers,PCMCIA cards, cellular and cordless Low Threshold Voltage (VGS(th): V V) Makes it Ideal forLow Voltage Applications Miniature SOT 23 Surface Mount Package Saves Board Space BVSS Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements.

2 AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TA = 25 C unless otherwise noted)RatingSymbolValueUnitDrain to Source VoltageVDSS50 VdcGate to Source Voltage ContinuousVGS 20 VdcDrain Current Continuous @ TA = 25 C Pulsed Drain Current (tp 10 ms)IDIDM200800mATotal Power Dissipation @ TA = 25 CPD225mWOperating and Storage TemperatureRangeTJ, Tstg 55 to 150 CThermal Resistance,Junction to AmbientRqJA556 C/WMaximum Lead Temperature forSoldering Purposes, for 10 secondsTL260 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

3 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be ORDERING INFORMATIONN ChannelSOT 23 CASE 318 STYLE 21J1 MGGMARKINGDIAGRAM213200 mA, 50 VRDS(on) = WBSS138LT1 GSOT 23(Pb Free)3000 / Tape & ReelBVSS138LT1 GSOT 23(Pb Free)3000 / Tape & Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 Device CodeM= Date Code*G= Pb Free Package*Date Code orientation and/or overbar mayvary depending upon manufacturing 23(Pb Free)10,000 / Tape & Reel(Note.)

4 Microdot may be in either location)BVSS138LT3 GSOT 23(Pb Free)10,000 / Tape & ReelBSS138L, CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSD rain to Source Breakdown Voltage(VGS = 0 Vdc, ID = 250 mAdc)V(BR)DSS50 VdcZero Gate Voltage Drain Current(VDS = 25 Vdc, VGS = 0 Vdc, 25 C)(VDS = 50 Vdc, VGS = 0 Vdc, 25 C)(VDS = 50 Vdc, VGS = 0 Vdc, 150 C)IDSS Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)IGSS CHARACTERISTICS (Note 1)Gate Source Threshold Voltage(VDS = VGS, ID = mAdc)VGS(th) Drain to Source On Resistance(VGS = Vdc, ID < 200 mAdc, TA = 40 C to +85 C)(VGS = Vdc, ID = 200 mAdc)rDS(on) Transconductance(VDS = 25 Vdc, ID = 200 mAdc, f = kHz)gfs100 mmhosDYNAMIC CHARACTERISTICSI nput Capacitance(VDS = 25 Vdc, VGS = 0, f = 1 MHz)Ciss 4050pFOutput Capacitance(VDS = 25 Vdc, VGS = 0, f = 1 MHz)Coss 1225 Transfer Capacitance(VDG = 25 Vdc, VGS = 0, f = 1 MHz)Crss CHARACTERISTICS (Note 2)

5 Turn On Delay Time(VDD = 30 Vdc, ID = Adc,)td(on) 20nsTurn Off Delay Timetd(off) 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.2. Switching characteristics are independent of operating junction , ELECTRICAL CHARACTERISTICSRDS(on), DRAIN-TO-SOURCE RESISTANCE(NORMALIZED)Figure 1.

6 On Region Characteristics1TJ, JUNCTION TEMPERATURE ( C)Figure 2. Transfer CharacteristicsFigure 3. On Resistance Variation withTemperatureVGS = 10 VID = A- , GATE-TO-SOURCE VOLTAGE (VOLTS)040QT, TOTAL GATE CHARGE (pC)8500 VDS = 40 VTJ = 25 C1000ID = 200 = VID = A20001026 Vgs(th), VARIANCE (VOLTS)1TJ, JUNCTION TEMPERATURE ( C)ID = mA- 4. Threshold Voltage Variation with , DRAIN CURRENT (AMPS)VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)Figure 5. Gate ChargeVDS = 10 V150 C25 C-55 , DRAIN-TO-SOURCE VOLTAGE (VOLTS)ID, DRAIN CURRENT (AMPS) = VVGS = VVGS = VVGS = VVGS = = 25 , DRAIN-TO-SOURCE VOLTAGE (V)125 CFigure 6.

7 CIDSS, DRAIN-TO-SOURCE LEAKAGE (A) bss138l , ELECTRICAL CHARACTERISTICSRDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)Figure 7. On Resistance versus Drain 8. On Resistance versus Drain CurrentID, DRAIN CURRENT (AMPS)Figure 9. On Resistance versus Drain 10. On Resistance versus DrainCurrentVSD, DIODE FORWARD VOLTAGE (VOLTS)Figure 11. Body Diode Forward VoltageID, DIODE CURRENT (AMPS)25 CVGS = VTJ = 150 C25 (on), DRAIN-TO-SOURCE RESISTANCE (OHMS) , DRAIN CURRENT (AMPS)VGS = C-55 C25 C-55 C8971002060 Figure 12.

8 CapacitanceRDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) , DRAIN CURRENT (AMPS)25 CVGS = (on), DRAIN-TO-SOURCE RESISTANCE (OHMS) , DRAIN CURRENT (AMPS)VGS = 10 C-55 C25 C-55 = VTJ = 25 Cf = 1 MHzVDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)C, CAPACITANCE (pF) bss138l , ELECTRICAL CHARACTERISTICSRDS(on) 13. Safe Operating AreaVDS, DRAIN TO SOURCE VOLTAGE (V)IDS, DRAIN TO SOURCE CURRENT (A) = 25 CVGS 10 V1 ms10 LIMITPACKAGE LIMIT100 bss138l , DIMENSIONSSOT 23 (TO 236)CASE 318 08 ISSUE ARSTYLE 21:PIN 1. GATE2.

9 SOURCE3. DRAINDA1312 NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 100 10T T3 XTOP VIEWSIDE VIEWEND : Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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