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MBRS320T3G, SBRS8320T3G, MBRS330T3G, …

Semiconductor Components Industries, LLC, 2013 August, 2017 Rev. 141 Publication Order Number:MBRS340T3/DMBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G,MBRS340T3G, SBRS8340T3 GSurface MountSchottky Power RectifierThese devices employ the schottky Barrier principle in a large areametal-to-silicon power diode. State-of-the-art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes, in surface mountapplications where compact size and weight are critical to the Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop( V Max @ A, TJ = 25 C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 SBRS8 and NRVB Prefix for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements.

Title: MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G - SURFACE MOUNT SCHOTTKY POWER RECTIFIER Author: ffgztc Subject: These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode.

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Transcription of MBRS320T3G, SBRS8320T3G, MBRS330T3G, …

1 Semiconductor Components Industries, LLC, 2013 August, 2017 Rev. 141 Publication Order Number:MBRS340T3/DMBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G,MBRS340T3G, SBRS8340T3 GSurface MountSchottky Power RectifierThese devices employ the schottky Barrier principle in a large areametal-to-silicon power diode. State-of-the-art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes, in surface mountapplications where compact size and weight are critical to the Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop( V Max @ A, TJ = 25 C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 SBRS8 and NRVB Prefix for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements.

2 AEC Q101 Qualified and PPAP Capable* These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V 0 Weight: 217 mg (Approximately) Finish: All External surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes:260 C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V)DevicePackageShipping ORDERING INFORMATIONSCHOTTKY AMPERES20, 30, 40 VOLTSMBRS320T3 GSMC(Pb Free)2,500 / Tape & ReelMARKING DIAGRAMB3x= Device Codex= 2, 3 or 4A= Assembly Location**Y= YearWW = Work WeekG= Pb Free For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 (Pb Free)2,500 / Tape & ReelMBRS340T3 GSMC(Pb Free)2,500 / Tape & Reel(Note.)

3 Microdot may be in either location)SBRS8320T3G*SMC(Pb Free)2,500 / Tape & ReelNRVBS330T3 GSMC(Pb Free)2,500 / Tape & ReelSBRS8340T3G*SMC(Pb Free)2,500 / Tape & ReelSMC 2 LEADCASE 403 ACAYWWB3xGG**The Assembly Location code (A) is front sideoptional. In cases where the Assembly Location isstamped in the package, the front side assembly codemay be , SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, RATINGSR atingSymbolMBRS320T3G,SBRS8320T3 GMBRS330T3G,NRVBRS330T3 GMBRS340T3G,SBRS8340T3 GUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR203040 VAverage Rectified Forward CurrentIF(AV) @ TL = 110 @ TL = 105 CANonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)IFSM80 AOperating Junction TemperatureTJ 65 to +150 CISO 7637 Pulse #1(100 V, 10W)5000 PulsesESD Ratings: Machine Model = CHuman Body Model = 3B> 400> 8000 VStresses exceeding those listed in the Maximum Ratings table may damage the device.

4 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICST hermal Resistance, Junction to LeadRqJL11 C/WELECTRICAL CHARACTERISTICSM aximum Instantaneous Forward Voltage (Note 1)(iF = A, TJ = 25 C) Instantaneous Reverse Current (Note 1)(Rated dc Voltage, TJ = 25 C)(Rated dc Voltage, TJ = 100 C) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width = 300 ms, Duty Cycle ELECTRICAL , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 1. Typical Forward VoltageFigure 2. Maximum Forward , INSTANTANEOUS FORWARDCURRENT (AMPS)TJ = 25 CTJ = 125 CTJ = 100 CTJ = 65 CVF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)iF, INSTANTANEOUS FORWARDCURRENT (AMPS) = 25 CTJ = 125 CTJ = 100 CTJ = 65 = 40 CTJ = 40 CMBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, ELECTRICAL CHARACTERISTICS (continued)020251030VR, REVERSE VOLTAGE (V)Figure 3.

5 Typical Reverse CurrentFigure 4. Maximum Reverse Current3540IR, REVERSE CURRENT (AMPS)TJ = 25 CTJ = 125 CTJ = 100 01020251030VR, REVERSE VOLTAGE (V)3540IR, MAXIMUM REVERSE CURRENT (AMPS)TJ = 25 CTJ = 125 CTJ = 100 01015090100110120TL, LEAD TEMPERATURE ( C)Figure 5. Current DeratingFigure 6. Forward Power Dissipation130140IO, AVERAGE FORWARD CURRENT (AMPS)0401 23IO, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)12345 SQUARE = 5 IPK/IO = 05 Freq = 20 kHzRqJL = 11 C/WFigure 7. Typical Capacitance7000360162024VR, REVERSE VOLTAGE (V)100283240C, CAPACITANCE (pF)TJ = 25 C2003004005006004812 TYPICAL CAPACITANCE AT 0 V = 658 pFMBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, DIMENSIONSJSMC 2 LEADCASE 403 ACISSUE BJ*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, :1.

6 DIMENSIONING AND TOLERANCING PER ANME , CONTROLLING DIMENSION: DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLDFLASH SHALL NOT EXCEED PER DIMENSIONS D AND E TO BE DETERMINED AT DATUM DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION VIEWSIDE VIEWEND VIEWHDETAIL ADETAIL ASOLDERING FOOTPRINT* mminches SCALE 4 Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coveragemay be accessed at ON Semiconductor reserves the right to make changes without further notice to any products Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

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