NVD6824NL - Power MOSFET - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2013 June, 2019 Rev. 21 Publication Order Number: NVD6824NL /DNVD6824 NLMOSFET Power , SingleN-Channel100 V, 20 mW, 41 AFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q101 Qualified These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TJ = 25 C unless otherwise noted)ParameterSymbolValueUnitDrain to Source VoltageVDSS100 VGate to Source VoltageVGS"20 VContinuous Drain Cur-rent RqJC (Note 1)SteadyStateTC = 25 CID41 ATC = 100 C29 Power Dissipation RqJC(Note 1)

2 TC = 25 CPD90 WTC = 100 C45 Continuous Drain Cur-rent RqJA (Notes 1 & 2)SteadyStateTA = 25 = 100 Dissipation RqJA(Notes 1 & 2)TA = 25 = 100 Drain CurrentTA = 25 C, tp = 10 msIDM238 ACurrent Limited byPackage (Note 3)TA = 25 CIDmaxpkg60 AOperating Junction and Storage TemperatureTJ, Tstg 55 to175 CSource Current (Body Diode)IS41 ASingle Pulse Drain to Source Avalanche Energy (TJ = 25 C, VGS = 10 V,IL(pk) = 40 A, L = mH, RG = 25 W)EAS80mJLead Temperature for Soldering Purposes(1/8 from case for 10 s)TL260 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

3 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be RESISTANCE MAXIMUM RATINGSP arameterSymbolValueUnitJunction to Case Steady State (Drain) C/WJunction to Ambient Steady State (Note 2)RqJA391. The entire application environment impacts the thermal resistance valuesshown, they are not constants and are only valid for the particular Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu Continuous DC current rating. Maximum current for pulses as long as 1second is higher but is dependent on pulse duration and duty 369 CSTYLE 2 MARKING DIAGRAMS& PIN ASSIGNMENT100 V20 mW @ 10 VRDS(on)41 AIDV(BR)DSS23 mW @ ChannelDSG1 Gate2 Drain3 Source4 DrainYWW6824 LGY= YearWW= Work Week6824L = Device CodeG= Pb Free PackageDevicePackageShipping ORDERING INFORMATIONNVD6824 NLT4 GDPAK(Pb Free)

4 2500/Tape& Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 VF01 DPAK(Pb Free)2500/Tape& CHARACTERISTICS (TJ = 25 C unless otherwise noted)ParameterSymbolTest ConditionMinTypMaxUnitOFF CHARACTERISTICSD rain to Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 250 mA100 VDrain to Source Breakdown VoltageTemperature CoefficientV(BR)DSS/TJ92mV/ CZero Gate Voltage Drain CurrentIDSSVGS = 0 V,VDS = 100 VTJ = 25 = 125 C100 Gate to Source Leakage CurrentIGSSVDS = 0 V, VGS = "20 V"100nAON CHARACTERISTICS (Note 4)Gate Threshold VoltageVGS(TH)VGS = VDS, ID = 250 Threshold Temperature Co-efficientVGS(TH)/TJ CDrain to Source On ResistanceRDS(on)

5 VGS = 10 V, ID = 20 = V, ID = 20 TransconductancegFSVDS = 15 V, ID = 20 A18 SCHARGES, CAPACITANCES AND GATE RESISTANCESI nput CapacitanceCissVGS = 0 V, f = MHz,VDS = 25 V3468pFOutput CapacitanceCoss187 Reverse Transfer CapacitanceCrss133 Total Gate ChargeQG(TOT)VGS = V, VDS = 80 V,ID = 20 A34nCVGS = 10 V, VDS = 80 V,ID = 20 A66 Threshold Gate ChargeQG(TH)VGS = 10 V, VDS = 80 V,ID = 20 to Source to Drain ChargeQGD18 SWITCHING CHARACTERISTICS (Note 5)Turn On Delay Timetd(on)VGS = 10 V, VDD = 80 V,ID = 20 A, RG = W15nsRise Timetr55 Turn Off Delay Timetd(off)31 Fall Timetf42 DRAIN SOURCE DIODE CHARACTERISTICSF orward Diode VoltageVSDVGS = 0 V, IS = 20 ATJ = 25 = 125 Recovery TimetRRVGS = 0 V, dIs/dt = 100 A/ms,IS = 20 A38nsCharge Timeta28 Discharge Timetb10 Reverse Recovery ChargeQRR59nCProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

6 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.5. Switching characteristics are independent of operating junction CHARACTERISTICSF igure 1. On Region CharacteristicsFigure 2. Transfer CharacteristicsVDS, DRAIN TO SOURCE (V)VGS, GATE TO SOURCE VOLTAGE (V) 3. On Resistance vs. Gate VoltageFigure 4. On Resistance vs. Drain Current andGate VoltageVGS, GATE TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A) 5. On Resistance Variation withTemperatureFigure 6.

7 Drain to Source Leakage Currentvs. VoltageTJ, JUNCTION TEMPERATURE ( C)VDS, DRAIN TO SOURCE (V)15012510050250 25 k10 k100 kID, DRAIN CURRENT (A)ID, DRAIN CURRENT (A)RDS(on), DRAIN TO SOURCE RESISTANCE (W)RDS(on), DRAIN TO SOURCERESISTANCE (Normalized)IDSS, LEAKAGE (nA)RDS(on), DRAIN TO SOURCE RESISTANCE (W)305060801007517580100 VGS = 10 VTJ = 25 VVDS 10 VTJ = 25 CTJ = 125 CTJ = 55 CID = 20 ATJ = 25 CTJ = 25 CVGS = 10 VVGS = VID = 20 AVGS = 10 VVGS = 0 VTJ = 125 CTJ = 150 CHARACTERISTICSCrssFigure 7.

8 Capacitance VariationFigure 8. Gate to Source Voltage vs. TotalChargeVDS, DRAIN TO SOURCE VOLTAGE (V)QG, TOTAL GATE CHARGE (nC)807060403020100010002000300040005000 7060504030201000246810 Figure 9. Resistive Switching Time Variationvs. Gate ResistanceFigure 10. Diode Forward Voltage vs. CurrentRG, GATE RESISTANCE (W)VSD, SOURCE TO DRAIN VOLTAGE (V) 11. Maximum Rated Forward BiasedSafe Operating AreaVDS, DRAIN TO SOURCE VOLTAGE (V) , CAPACITANCE (pF)VGS, GATE TO SOURCE VOLTAGE (V)t, TIME (ns)IS, SOURCE CURRENT (A)ID, DRAIN CURRENT (A)5090100 VGS = 0 VTJ = 25 CCissCossVDS = 80 VID = 20 AVGS = 10 Vtrtftd(off)td(on)VGS = 0 VTJ = 25 CVGS = 10 VSingle PulseTC = 25 CRDS(on) LimitThermal LimitPackage Limitdc10 ms1 ms100 ms10 msQTQgdQgsVDS = 80 VID = 20 ATJ = 25 CHARACTERISTICSF igure 12.

9 Thermal ResponsePULSE TIME (sec) (t) ( C/W) PulseDuty Cycle = DIMENSIONSDPAK (SINGLE GAUGE)CASE 369 CISSUE mminches SCALE 3:1*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* ( ) NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: THERMAL PAD CONTOUR OPTIONAL WITHIN DI-MENSIONS b3, L3 and DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS, OR BURRS.

10 MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALLNOT EXCEED INCHES PER DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC DATUMS A AND B ARE DETERMINED AT DATUMPLANE OPTIONAL MOLD BSCA1 HDETAIL ASEATINGPLANEABCL1 LHL2 GAUGEPLANEDETAIL AROTATED 90 CW5eBOTTOM VIEWZBOTTOM VIEWSIDE VIEWTOP VIEWALTERNATECONSTRUCTIONSNOTE 7 ZON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.