NTS4001N - Small Signal MOSFET - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2011 June, 2019 Rev. 51 Publication Order Number: NTS4001N /DNTS4001N, NVS4001 NMOSFET Single,N-Channel, Small Signal ,SC-7030 V, 270 mAFeatures Low Gate Charge for Fast Switching Small Footprint 30% Smaller than TSOP 6 ESD Protected Gate AEC Q101 Qualified and PPAP Capable NVS4001N These Devices are Pb Free and are RoHS CompliantApplications Low Side Load Switch Li Ion Battery Supplied Devices Cell Phones, PDAs, DSC Buck Converters Level ShiftsMAXIMUM RATINGS (TJ = 25 C unless otherwise stated)

2 ParameterSymbolValueUnitsDrain to Source VoltageVDSS30 VGate to Source VoltageVGS 20 VContinuous Drain Current (Note 1)SteadyStateTA = 25 CID270mATA = 85 C200 Power Dissipation(Note 1)SteadyStateTA = 25 CPD330mWPulsed Drain Currentt =10 msIDM800mAOperating Junction and Storage TemperatureTJ, TSTG 55 to150 CSource Current (Body Diode)IS270mALead Temperature for Soldering Purposes (1/8 from case for 10 s)TL260 CStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only.

3 Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device Surface mounted on FR4 board using 1 in sq. pad size (Cu area = in sq. [1 oz] including traces).DevicePackageShipping ORDERING INFORMATION(Top View)SC 70 / SOT 323 CASE 419 STYLE 8 MARKING DIAGRAM &PIN ASSIGNMENT21 Device CodeM= Date Code*G= Pb Free PackageSC 70/SOT 323 (3 LEADS)DrainGate312V(BR)DSSRDS(on) TYPID Max30 W @ W @ V270 mANTS4001NT1 GSC 70(Pb Free)3000 / Tape & ReelTD MGGS ource3123 GSD(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.

4 For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 70(Pb Free)3000 / Tape & ReelNTS4001N, NVS4001 CHARACTERISTICS (TJ = 25 C unless otherwise stated)ParameterSymbolTest ConditionMinTypMaxUnitOFF CHARACTERISTICSD rain to Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 100 mA30 VDrain to Source Breakdown Voltage Temperature CoefficientV(BR)DSS/TJ60mV/ CZero Gate Voltage Drain CurrentIDSSVGS = 0 V, VDS = 30 to Source Leakage CurrentIGSSVDS = 0 V, VGS = 10 V CHARACTERISTICS (Note 2)Gate Threshold VoltageVGS(TH)VGS = VDS, ID = 100 Threshold Temperature CoefficientVGS(TH)/TJ CDrain to Source On ResistanceRDS(on)

5 VGS = V, ID = 10 = V, ID = 10 TransconductancegFSVDS = V, ID = 10 mA80mSCHARGES AND CAPACITANCESI nput CapacitanceCISSVGS = 0 V, f = MHz, VDS = V2033pFOutput CapacitanceCOSS1932 Reverse Transfer Gate ChargeQG(TOT)VGS = V, VDS = 24 V, ID = Gate ChargeQG(TH) to Source to Drain CHARACTERISTICS (Note 3)Turn On Delay Timetd(ON)VGS = V, VDD = V, ID = 10 mA, RG = 50 W17nsRise Timetr23 Turn Off Delay Timetd(OFF)94 Fall Timetf82 DRAIN SOURCE DIODE CHARACTERISTICSF orward Diode VoltageVSDVGS = 0 V, IS = 10 mATJ = 25 = 125 Recovery TimetRRVGS = 0 V, dIS/dt = A/ms, IS = 10 Pulse Test: pulse width 300 ms, duty cycle 2%.

6 3. Switching characteristics are independent of operating junction , NVS4001 PERFORMANCE CURVES (TJ = 25 C unless otherwise noted) , DRAIN TO SOURCE VOLTAGE (VOLTS)ID, DRAIN CURRENT (AMPS) 1. On Region 2. Transfer CharacteristicsVGS, GATE TO SOURCE VOLTAGE (VOLTS) 3. On Resistance vs. Drain Current andTemperatureID, DRAIN CURRENT (AMPS)RDS(on), DRAIN TO SOURCE RESISTANCE (W)ID, DRAIN CURRENT (AMPS)Figure 4. On Resistance vs. Drain Current andGate Voltage 500 5. On Resistance Variation withTemperatureTJ, JUNCTION TEMPERATURE ( C)TJ = 25 = 55 CTJ = 125 C75150ID = AVGS = 10 VRDS(on), DRAIN TO SOURCERESISTANCE (NORMALIZED) 6.

7 Drain to Source Leakage Currentvs. V2 = 5 = VVGS = 10 V to 3 = 125 CVGS = 10 VTJ = 55 CTJ = 25 , DRAIN TO SOURCE VOLTAGE (VOLTS)1000010 IDSS, LEAKAGE (nA)10001001015TJ = 150 CTJ = 125 C5 VGS = 0 , DRAIN CURRENT (AMPS)RDS(on), DRAIN TO SOURCE RESISTANCE (W) = 10 VTJ = 25 = VNTS4001N, NVS4001 TYPICAL PERFORMANCE CURVES (TJ = 25 C unless otherwise noted)VDS = 0 VVGS = 0 V01010302010025 GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS)C, CAPACITANCE (pF) , TOTAL GATE CHARGE (nC)VGS, GATE TO SOURCE VOLTAGE (VOLTS)

8 TJ = 25 CCossCissCrssID = ATJ = 25 , SOURCE TO DRAIN VOLTAGE (VOLTS)IS, SOURCE CURRENT (AMPS)VGS = 0 VTJ = 25 7. Capacitance VariationFigure 8. Gate to Source Voltage vs. TotalGate ChargeFigure 9. Diode Forward Voltage vs. 70 (SOT 323)CASE 419 04 ISSUE NDATE 11 NOV 2008 SCALE 4:1 STYLE 3:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 4:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 2:PIN 1. ANODE2. CATHODESTYLE 1:CANCELLEDSTYLE 5:PIN 1. ANODE 2. ANODE 3. CATHODESTYLE 6:PIN 1. EMITTER 2. BASE 3. COLLECTORSTYLE 7:PIN 1.

9 BASE 2. EMITTER 3. COLLECTORAA2De1beEA1cL312 NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI , CONTROLLING DIMENSION: ( )STYLE 8:PIN 1. GATE 2. SOURCE 3. DRAINSTYLE 9:PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODESTYLE 10:PIN 1. CATHODE 2. ANODE 3. mminches SCALE 10:1XX MGGXX= Specific Device CodeM= Date CodeG= Pb Free PackageGENERICMARKING DIAGRAM*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* 11:PIN 1.

10 CATHODE2. CATHODE3. CATHODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.