2N3019 - Low Power Transistors

1 Semiconductor Components Industries, LLC, 2012 August, 2012 Rev. 21 Publication Order Number: 2N3019 /D2N3019, 2N3019S, 2N3700 Low Power TransistorsNPN SiliconFeatures MIL PRF 19500/391 Qualified Available as JAN, JANTX, and JANTXVMAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO80 VdcCollector Base VoltageVCBO140 VdcEmitter Base Current Device Dissipation @ TA = 25 C2N3019, 2N3019S2N3700PT800500mWTotal Device Dissipation @ TC = 25 C2N3019, and Storage JunctionTemperature RangeTJ, Tstg 65 to+200 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to Ambient2N3019, 2N3019S2N3700 RqJA195325 C/WThermal Resistance, Junction to Case2N3019, 2N3019S2N3700 RqJC30150 C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied.

2 Extended exposure to stresses above theRecommended Operating Conditions may affect device 5 CASE 205 AASTYLE 12N3019 DevicePackageShippingORDERING INFORMATIONJAN2N3019 JANTX2N3019TO 5 BulkJANTXV2N3019 JAN2N3019 SJANTX2N3019 STO 39 BulkJANTXV2N3019 STO 39 CASE 205 ABSTYLE 12N3019 STO 18 CASE 206 AASTYLE 12N3700 JAN2N3700 JANTX2N3700TO 18 BulkJANTXV2N37002N3019, 2N3019S, 2N3700 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = 30 mAdc)V(BR)CEO80 VdcEmitter Base Cutoff Current(VEB = Vdc)(VEB = Vdc)IEBO 1010nAdcmAdcCollector Emitter Cutoff Current(VCE = 90 Vdc)ICEO 10nAdcCollector Base Cutoff Current(VCB = 140 Vdc)ICBO 10mAdcON CHARACTERISTICS (Note 1)DC Current Gain(IC = mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)(IC = 150 mAdc, VCE = 10 Vdc)(IC = 500 mAdc, VCE = 10 Vdc)(IC = Adc, VCE = 10 Vdc)hFE50901005015300 300300 Collector Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc)VBE(sat) SIGNAL CHARACTERISTICSM agnitude of Small Signal Current Gain(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)|hfe| Small Signal Current Gain(IC = mAdc, VCE = 5 Vdc, f = 1 kHz)hfe80400 Output Capacitance(VCB = 10 Vdc, IE = 0, 100 kHz f MHz)Cobo 12pFInput Capacitance(VEB = Vdc, IC = 0, 100 kHz f MHz)Cibo 60pFNoise Figure(VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz)NF Base Time Constant(VCB = 10 Vdc, IC = 10 mAdc, f = MHz)r b,CC 400psSWITCHING CHARACTERISTICSP ulse Response(Reference Figure in MIL PRF 19500/391)ton + toff 30ns1.

3 Pulse Test: Pulse Width = 300 ms, Duty Cycle , 2N3019S, 2N3700 DIMENSIONSTO 5 3 LeadCASE 205 AAISSUE BSTYLE 1:PIN 1. EMITTER2. BASE3. ( )CMANDIM MINMAXMIN BSC45 :1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: DIMENSION J MEASURED FROM DIAMETER A TO LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGEPLANE DEFINED BY DIMENSION DIMENSION F APPLIES BETWEEN DIMENSION P AND DIMENSION D APPLIES BETWEEN DIMENSION L AND BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND DIMENSION B SHALL NOT VARY MORE THAN IN ZONE XUNOTE 5 NOTES 4 & 6 CUE231 DETAIL XNOTE 7 TLEAD IDENTIFICATIONDETAILTO 39 3 LeadCASE 205 ABISSUE ASTYLE 1:PIN 1. EMITTER2. BASE3. ( )CMANDIM MINMAXMIN BSC45 :1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: DIMENSION J MEASURED FROM DIAMETER A TO LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGEPLANE DEFINED BY DIMENSION DIMENSION F APPLIES BETWEEN DIMENSION P AND DIMENSION D APPLIES BETWEEN DIMENSION L AND BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND DIMENSION B SHALL NOT VARY MORE THAN IN ZONE XUNOTE 5 NOTES 4 & 6 CUE231 DETAIL XNOTE 7 TLEAD IDENTIFICATIONDETAIL2N3019, 2N3019S, 2N3700 DIMENSIONSTO 18 3 LeadCASE 206 AAISSUE ASTYLE 1:PIN 1.

4 EMITTER2. BASE3. ( )CMANDIM MINMAXMIN BSC45 :1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: DIMENSION J MEASURED FROM DIAMETER A TO LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGEPLANE DEFINED BY DIMENSION DIMENSION F APPLIES BETWEEN DIMENSION P AND DIMENSION D APPLIES BETWEEN DIMENSION L AND BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND XUNOTE 5 NOTES 4 & 6 CUE231 DETAIL XNOTE 7 TLEAD IDENTIFICATIONDETAILON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein.

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