Axial Lead Rectifiers

1 DATA Semiconductor Components Industries, LLC, 2006 August, 2021 Rev. 111 Publication Order Number:1N5817/DAxial Lead RectifiersSCHOTTKY BARRIER AMPERE 20, 30 and 40 VOLTS1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large areametal to silicon power diode. State of the art geometry featureschrome barrier metal, epitaxial construction with oxide passivationand metal overlap contact. Ideally suited for use as Rectifiers inlow voltage, high frequency inverters, free wheeling diodes, andpolarity protection Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb Free Devices*Mechanical Characteristics: Case: Epoxy, Molded Weight: Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V)Human Body Model = 3B (>8000 V)*For additional information on our Pb Free strategy and soldering details, pleasedownload the onsemi Soldering and Mounting Techniques Reference Manual, detailed ordering and shipping information on page 6 ofthis data INFORMATIONMARKING DIAGRAMA=Assembly Location1N581x =Device Numberx= 7, 8, or 9YY=YearWW=Work WeekG=Pb Free PackageA1N581xYYWWGG(Note.)

2 Microdot may be in either location) Axial LEADCASE 59 STYLE 11N5817, 1N5818, RATINGSR atingSymbol1N58171N58181N5819 UnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR203040 VNon Repetitive Peak Reverse VoltageVRSM243648 VRMS Reverse VoltageVR(RMS)142128 VAverage Rectified Forward Current (Note 1), (VR(equiv) VR(dc), TL = 90 C,RqJA = 80 C/W, Board Mounting, see Note 2, TA = 55 C) Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80 C/W)TA858075 CNon Repetitive Peak Surge Current, (Surge applied at rated load conditions,half wave, single phase 60 Hz, TL = 70 C)IFSM25 (for one cycle)AOperating and Storage Junction Temperature Range (Reverse Voltage applied)TJ, Tstg 65 to +125 CPeak Operating Junction Temperature (Forward Current applied)TJ(pk)150 CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS (Note 1)CharacteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA80 C/WELECTRICAL CHARACTERISTICS (TL = 25 C unless otherwise noted) (Note 1)CharacteristicSymbol1N58171N58181N5819 UnitMaximum Instantaneous Forward Voltage (Note 2)(iF = A)(iF = A)(iF = A) Instantaneous Reverse Current @ Rated dc Voltage (Note 2)(TL = 25 C)(TL = 100 C) Lead Temperature reference is cathode lead 1/32 in from Pulse Test: Pulse Width = 300 ms, Duty Cycle = , REFERENCE TEMPERATURE ( C)VR, DC REVERSE VOLTAGE (VOLTS)Figure 1.

3 Maximum Reference Temperature1N58174030236080 RqJA ( C/W) = ( C/W) = 1108060 Figure 2. Maximum Reference ( C/W) = 1106080 Figure 3. Maximum Reference Temperature1N5819403023TR, REFERENCE TEMPERATURE ( C) VR, DC REVERSE VOLTAGE (VOLTS)VR, DC REVERSE VOLTAGE (VOLTS)TR, REFERENCE TEMPERATURE ( C)1N5817, 1N5818, 3. DETERMINING MAXIMUM RATINGSR everse power dissipation and the possibility of thermalrunaway must be considered when operating this rectifier atreverse voltages above VRWM. Proper derating may beaccomplished by use of equation (1).TA(max) =where TA(max) =TJ(max) =PF(AV) =PR(AV) =RqJA =TJ(max) RqJAPF(AV) RqJAPR(AV)Maximum allowable ambient temperatureMaximum allowable junction temperature(1)Average forward power dissipation(125 C or the temperature at which thermalrunaway occurs, whichever is lowest)Average reverse power dissipationJunction to ambient thermal resistanceFigures 1, 2, and 3 permit easier use of equation (1) bytaking reverse power dissipation and thermal runaway intoconsideration.

4 The figures solve for a reference temperatureas determined by equation (2).TR = TJ(max) RqJAPR(AV)(2)Substituting equation (2) into equation (1) yields:TA(max) = TR RqJAPF(AV)(3)Inspection of equations (2) and (3) reveals that TR is theambient temperature at which thermal runaway occurs orwhere TJ = 125 C, when forward power is zero. Thetransition from one boundary condition to the other isevident on the curves of Figures 1, 2, and 3 as a differencein the rate of change of the slope in the vicinity of 115 C. Thedata of Figures 1, 2, and 3 is based upon dc conditions. Foruse in common rectifier circuits, Table 1 indicates suggestedfactors for an equivalent dc voltage to use for conservativedesign, that is:(4)VR(equiv) = Vin(PK) x FThe factor F is derived by considering the properties of thevarious rectifier circuits and the reverse characteristics ofSchottky : Find TA(max) for 1N5818 operated in a12 volt dc supply using a bridge circuit with capacitive filtersuch that IDC = A (IF(AV) = A), I(FM)/I(AV) = 10, InputVoltage = 10 V(rms), RqJA = 80 1.

5 Find VR(equiv). Read F = from Table 1,Step 1. Find VR(equiv) = ( )(10)( ) = 2. Find TR from Figure 2. Read TR = 109 CStep 1. Find @ VR = V and RqJA = 80 3. Find PF(AV) from Figure 4. **Read PF(AV) = W@I(FM)I(AV)= 10 and IF(AV) = 4. Find TA(max) from equation (3).Step 4. Find TA(max) = 109 (80) ( ) = 69 C.**Values given are for the 1N5818. Power is slightly lower for the1N5817 because of its lower forward voltage, and higher for WaveResistiveCapacitive*Full Wave, BridgeResistiveCapacitiveFull Wave, Center Tapped* ResistiveCapacitiveSine WaveSquare **Note that VR(PK) Vin(PK). Use line to center tap voltage for 1. Values for Factor F1N5817, 1N5818, JL, THERMAL RESISTANCE, JUNCTION-TO-LEAD ( C/W)BOTH LEADS TO HEATSINK,EQUAL LENGTHMAXIMUMTYPICALL, LEAD length (INCHES)Figure 4. Steady State Thermal (AV), AVERAGE POWER DISSIPATION (WATTS)IF(AV), AVERAGE FORWARD CURRENT (AMP)dcSQUARE WAVETJ 125 (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)ZqJL(t) = ZqJL r(t)PpkPpktpt1 TIMEDUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak ofanequivalent square power = Ppk RqJL [D + (1 D) r(t1 + tp) + r(tp) r(t1)] whereDTJL = the increase in junction temperature above the lead temperaturer(t) = normalized value of transient thermal resistance at time, t, from Figure 6, :r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + , TIME (ms)NOTE 4.

6 MOUNTING DATAData shown for thermal resistance, junction to ambient(RqJA) for the mountings shown is to be used as typical guide-line values for preliminary engineering, or in case the tiepoint temperature cannot be VALUES FOR RqJA IN STILL AIRM ountingMethod1/81/41/23/4 Lead length , L (in)RqJA12352676580728785100 C/W C/W C/W50 Mounting Method Board with1 1/2 x 1 1/2 copper Method Board with1 1/2 x 1 1/2 copper = 3/8 BOARD GROUNDPLANEVECTOR PIN MOUNTINGLLM ounting Method 251020 Sine WaveI(FM)I(AV)= (Resistive Load)CapacitiveLoads{Figure 5. Forward Power Dissipation1N5817 19 Figure 6. Thermal Response1N5817, 1N5818, 5. THERMAL CIRCUIT MODEL(For heat conduction through the leads)TA(A)TA(K)RqS(A)RqL(A)RqJ(A)RqJ(K) RqL(K)RqS(K)PDTL(A)TC(A)TJTC(K)TL(K)vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)iF, INSTANTANEOUS FORWARD CURRENT (AMP)Figure 7. Typical Forward VoltageIFSM, PEAK SURGE CURRENT (AMP)NUMBER OF CYCLESF igure 8. Maximum Non Repetitive Surge CurrentIR, REVERSE CURRENT (mA)VR, REVERSE VOLTAGE (VOLTS)Figure 9.}

7 Typical Reverse CurrentTC = 100 C25 C1 CycleTL = 70 Cf = 60 HzSurge Applied atRated Load Conditions1N58171N58181N5819TJ = 125 C100 C25 CUse of the above model permits junction to lead thermal re-sistance for any mounting configuration to be found. For agiven total lead length , lowest values occur when one side ofthe rectifier is brought as close as possible to the in the model signify:TA = Ambient TemperatureTC = Case TemperatureTL = Lead TemperatureTJ = Junction TemperatureRqS = Thermal Resistance, Heatsink to AmbientRqL = Thermal Resistance, Lead to HeatsinkRqJ = Thermal Resistance, Junction to CasePD = Power Dissipation(Subscripts A and K refer to anode and cathode sides, re-spectively.) Values for thermal resistance components are:RqL = 100 C/W/in typically and 120 C/W/in maximumRqJ = 36 C/W typically and 46 C/W C1N5817, 1N5818, 6. HIGH FREQUENCY OPERATIONS ince current flow in a Schottky rectifier is the result ofmajority carrier conduction, it is not subject to junctiondiode forward and reverse recovery transients due tominority carrier injection and stored charge.

8 Satisfactorycircuit analysis work may be performed by using a modelconsisting of an ideal diode in parallel with a variablecapacitance. (See Figure 10.)Rectification efficiency measurements show thatoperation will be satisfactory up to several megahertz. Forexample, relative waveform rectification efficiency isapproximately 70 percent at MHz, , the ratio of dcpower to RMS power in the load is at this frequency,whereas perfect rectification would yield for sinewave inputs. However, in contrast to ordinary junctiondiodes, the loss in waveform efficiency is not indicative ofpower loss: it is simply a result of reverse current flowthrough the diode capacitance, which lowers the dc , CAPACITANCE (pF)VR, REVERSE VOLTAGE (VOLTS)Figure 10. Typical CapacitanceTJ = 25 Cf = MHz1N58191N58181N5817 ORDERING INFORMATIOND evicePackageShipping 1N5817 Axial Lead*1000 Units / Bag1N5817 GAxial Lead*1000 Units / Bag1N5817 RLAxial Lead*5000 / Tape & Reel1N5817 RLGA xial Lead*5000 / Tape & Reel1N5818 Axial Lead*1000 Units / Bag1N5818 GAxial Lead*1000 Units / Bag1N5818 RLAxial Lead*5000 / Tape & Reel1N5818 RLGA xial Lead*5000 / Tape & Reel1N5819 Axial Lead*1000 Units / Bag1N5819 GAxial Lead*1000 Units / Bag1N5819 RLAxial Lead*5000 / Tape & Reel1N5819 RLGA xial Lead*5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

9 *This package is inherently Pb Free. AxxxxxxYYWWSCALE 1 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: ALL RULES AND NOTES ASSOCIATED WITHJEDEC DO 41 OUTLINE SHALL APPLY4. POLARITY DENOTED BY CATHODE LEAD DIAMETER NOT CONTROLLED WITHIN LEADCASE 59 10 ISSUE UDATE 15 FEB 2005 GENERICMARKING DIAGRAM*xxx= Specific Device CodeA= Assembly LocationYY= YearWW= Work Week AxxxxxxYYWWSTYLE 1:PIN 1. CATHODE (POLARITY BAND)2. ANODESTYLE 2:NO POLARITYSTYLE 1 STYLE 2 STYLE 1 STYLE 2*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be INDICATOROPTIONAL AS NEEDED(SEE STYLES)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

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