DTC114E - Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ

1 DATA Semiconductor Components Industries, LLC, 2000 August, 2021 Rev. 91 Publication Order Number: DTC114E /DDigital Transistors (BRT)R1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasResistor NetworkMUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3 This series of Digital Transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components byintegrating them into a single device. The use of a BRT can reduceboth system cost and board Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TA = 25 C)RatingSymbolMaxUnitCollector Base VoltageVCBO50 VdcCollector Emitter VoltageVCEO50 VdcCollector Current ContinuousIC100mAdcInput Forward VoltageVIN(fwd)40 VdcInput Reverse VoltageVIN(rev)10 VdcStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be 3 COLLECTOR(OUTPUT)PIN 2 EMITTER(GROUND)PIN 1 BASE(INPUT)R1R2 See detailed ordering, marking, and shipping information inthe package dimensions section on page 2 of this data INFORMATIONSC 75 CASE 463 STYLE 1 MARKING DIAGRAMSXXX= Specific Device CodeM= Date Code*G=Pb Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending uponmanufacturing 59 CASE 318 DSTYLE 1 SOT 23 CASE 318 STYLE 6SC 70/SOT 323 CASE 419 STYLE 3 SOT 723 CASE 631 AASTYLE 1 SOT 1123 CASE 524 AASTYLE 1XX MGG11 XXX MGGXX MGG1XX M1X MXX M11 PIN CONNECTIONSMUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, 1. ORDERING INFORMATIOND evicePart MarkingPackageShipping MUN2211T1G, SMUN2211T1G8 ASC 59(Pb Free)3000 / Tape & ReelMUN2211T3G, SMUN2211T3G8 ASC 59(Pb Free)10000 / Tape & ReelMMUN2211LT1G, SMMUN2211LT1GA8 ASOT 23(Pb Free)3000 / Tape & ReelMMUN2211LT3G, SMMUN2211LT3GA8 ASOT 23(Pb Free)10000 / Tape & ReelMUN5211T1G, SMUN5211T1G8 ASC 70/SOT 323(Pb Free)3000 / Tape & ReelSMUN5211T3G8 ASC 70/SOT 323(Pb Free)10000 / Tape & ReelDTC114 EET1G, SDTC114 EET1G8 ASC 75(Pb Free)3000 / Tape & ReelDTC114EM3T5G8 ASOT 723(Pb Free)8000 / Tape & ReelNSBC114EF3T5 GASOT 1123(Pb Free)8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 1.

3 Derating CurveAMBIENT TEMPERATURE ( C)1251007550250 25 50050100150200250300PD, POWER DISSIPATION (mW)150(1) (2) (3) (4) (5)(1) SC 75 and SC 70/SOT323; Minimum Pad(2) SC 59; Minimum Pad(3) SOT 23; Minimum Pad(4) SOT 1123; 100 mm2, 1 oz. copper trace(5) SOT 723; Minimum PadMUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, 2. THERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTHERMAL CHARACTERISTICS (SC 59) (MUN2211)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA540370 C/WThermal Resistance,(Note 1)Junction to Lead (Note 2)RqJL264287 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SOT 23) (MMUN2211L)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA508311 C/WThermal Resistance,(Note 1)Junction to Lead (Note 2)RqJL174208 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SC 70/SOT 323) (MUN5211)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA618403 C/WThermal Resistance,(Note 1)

4 Junction to Lead (Note 2)RqJL280332 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SC 75) (DTC114EE)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA600400 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SOT 723) (DTC114EM3)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA480205 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 C1. FR 4 @ Minimum FR 4 @ x Inch FR 4 @ 100 mm2, 1 oz. copper traces, still FR 4 @ 500 mm2, 1 oz. copper traces, still , MMUN2211L, MUN5211, DTC114EE, DTC114EM3, 2. THERMAL CHARACTERISTICSC haracteristicUnitMaxSymbolTHERMAL CHARACTERISTICS (SOT 1123) (NSBC114EF3)Total Device DissipationTA = 25 C(Note 3)(Note 4)Derate above 25 C(Note 3)(Note 4) CThermal Resistance,(Note 3)Junction to Ambient(Note 4)RqJA493421 C/WThermal Resistance, Junction to Lead(Note 3)RqJL193 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 C1.

5 FR 4 @ Minimum FR 4 @ x Inch FR 4 @ 100 mm2, 1 oz. copper traces, still FR 4 @ 500 mm2, 1 oz. copper traces, still 3. ELECTRICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSC ollector Base Cutoff Current(VCB = 50 V, IE = 0)ICBO 100nAdcCollector Emitter Cutoff Current(VCE = 50 V, IB = 0)ICEO 500nAdcEmitter Base Cutoff Current(VEB = V, IC = 0)IEBO Base Breakdown Voltage(IC = 10 mA, IE = 0)V(BR)CBO50 VdcCollector Emitter Breakdown Voltage (Note 5)(IC = mA, IB = 0)V(BR)CEO50 VdcON CHARACTERISTICSDC Current Gain (Note 5)(IC = mA, VCE = 10 V)hFE3560 Collector Emitter Saturation Voltage (Note 5)(IC = 10 mA, IB = mA)VCE(sat) Voltage (off)(VCE = V, IC = 100 mA)Vi(off) Voltage (on)(VCE = V, IC = 10 mA)Vi(on) VdcOutput Voltage (on)(VCC = V, VB = V, RL = kW)VOL Voltage (off)(VCC = V, VB = V, RL = kW) VdcInput RatioR1 parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

6 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, CHARACTERISTICSMUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3 Figure 2. VCE(sat) vs. IC1002030IC, COLLECTOR CURRENT (mA) 3. DC Current GainFigure 4. Output , COLLECTOR CURRENT (mA)100010010110100IC, COLLECTOR CURRENT (mA)Figure 5. Output Current vs. Input 34 Vin, INPUT VOLTAGE (V)56 78 910 Figure 6. Input Voltage vs. Output Current50010 , REVERSE VOLTAGE (V)VCE(sat), COLLECTOR EMITTER VOLTAGE (V)IC/IB = 10TA = 25 C75 C25 CVCE = 10 VTA = 75 C 25 C25 ChFE, DC CURRENT GAINf = 10 kHzIE = 0 ATA = 25 , OUTPUT CAPACITANCE (pF)VO = 5 VTA = 75 C 25 C25 CIC, COLLECTOR CURRENT (mA)VO = VVin, INPUT VOLTAGE (V)TA = 75 C 25 C25 C40 MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, CHARACTERISTICS NSBC114EF3 Figure 7. VCE(sat) vs.

7 ICFigure 8. DC Current GainIC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA) 9. Output CapacitanceFigure 10. Output Current vs. Input VoltageVR, REVERSE VOLTAGE (V)Vin, INPUT VOLTAGE (V) 11. Input Voltage vs. Output CurrentIC, COLLECTOR CURRENT (mA) (sat), COLLECTOR EMITTERVOLTAGE (V)hFE, DC CURRENT GAINCob, OUTPUT CAPACITANCE (pF)IC, COLLECTOR CURRENT (mA)Vin, INPUT VOLTAGE (V)IC/IB = 10150 C 55 C25 CVCE = 10 V150 C 55 C25 Cf = 10 kHzIE = 0 ATA = 25 CVO = 5 V150 C 55 C25 CVO = V150 C 55 C25 CSOT 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1.

8 RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2. CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2. SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1. GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1.

9 CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2. ANODE 3. ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 SOT 23 (TO 236) Semiconductor Components Industries, LLC, 59 CASE 318D 04 ISSUE HDATE 28 JUN 2012 SCALE 2:1 STYLE 3:PIN 1.

10 ANODE2. ANODE3. CATHODESTYLE 1:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 2:PIN 1. ANODE2. CATHODESTYLE 4:PIN 1. CATHODE2. ANODESTYLE 5:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 6:PIN 1. ANODE2. CATHODE3. ANODE/CATHODEeA1bAED231 CLNOTES:1. DIMENSIONING AND TOLERANCING PER ANSI , CONTROLLING DIMENSION: mminches SCALE 10:1 XXX MGGXXX= Specific Device CodeM= Date CodeG= Pb Free Package*GENERICMARKING DIAGRAM*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* (*Note: Microdot may be in either location)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.