DTC144E - Digital Transistors (BRT) R1 = 47 kΩ, R2 = 47 kΩ

1 Semiconductor Components Industries, LLC, 2012 March, 2019 Rev. 51 Publication Order Number: DTC144E /DMUN2213, MMUN2213L,MUN5213, DTC144EE,DTC144EM3, NSBC144EF3 Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasResistor NetworkThis series of Digital Transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components byintegrating them into a single device. The use of a BRT can reduceboth system cost and board Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101 Qualifiedand PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TA = 25 C)RatingSymbolMaxUnitCollector Base VoltageVCBO50 VdcCollector Emitter VoltageVCEO50 VdcCollector Current ContinuousIC100mAdcInput Forward VoltageVIN(fwd)40 VdcInput Reverse VoltageVIN(rev)10 VdcStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be 3 COLLECTOR(OUTPUT)PIN 2 EMITTER(GROUND)PIN 1 BASE(INPUT)R1R2 See detailed ordering, marking, and shipping information inthe package dimensions section on page 2 of this data INFORMATIONSC 75 CASE 463 STYLE 1 MARKING DIAGRAMSXXX= Specific Device CodeM= Date Code*G=Pb Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing 59 CASE 318 DSTYLE 1 SOT 23 CASE 318 STYLE 6SC 70/SOT 323 CASE 419 STYLE 3 SOT 723 CASE 631 AASTYLE 1 SOT 1123 CASE 524 AASTYLE 1(Rotated 0 ClockwiseXX MGG11 XXX MGGXX MGG1XX M1X MXX M11 PIN , MMUN2213L, MUN5213, DTC144EE, DTC144EM3, 1.)

3 ORDERING INFORMATIOND evicePart MarkingPackageShipping MUN2213T1G, SMUN2213T1G*8 CSC 59(Pb Free)3000 / Tape & ReelMMUN2213LT1G, SMMUN2213LT1G*A8 CSOT 23(Pb Free)3000 / Tape & ReelSMMUN2213LT3GA8 CSOT 23(Pb Free)10000 / Tape & ReelMUN5213T1G, SMUN5213T1G*8 CSC 70/SOT 323(Pb Free)3000 / Tape & ReelDTC144 EET1G, SDTC144 EET1G*8 CSC 75(Pb Free)3000 / Tape & ReelDTC144EM3T5G, NSVDTC144EM3T5G*8 CSOT 723(Pb Free)8000 / Tape & ReelNSBC144EF3T5 GDSOT 1123(Pb Free)8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified andPPAP 1.

4 Derating CurveAMBIENT TEMPERATURE ( C)1251007550250 25 50050100150200250300PD, POWER DISSIPATION (mW)150(1) (2) (3) (4) (5)(1) SC 75 and SC 70/SOT323; Minimum Pad(2) SC 59; Minimum Pad(3) SOT 23; Minimum Pad(4) SOT 1123; 100 mm2, 1 oz. copper trace(5) SOT 723; Minimum PadMUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, 2. THERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTHERMAL CHARACTERISTICS (SC 59) (MUN2213)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA540370 C/WThermal Resistance,(Note 1)Junction to Lead (Note 2)RqJL264287 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SOT 23) (MMUN2213L)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA508311 C/WThermal Resistance,(Note 1)Junction to Lead (Note 2)RqJL174208 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SC 70/SOT 323)

5 (MUN5213)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA618403 C/WThermal Resistance,(Note 1)Junction to Lead (Note 2)RqJL280332 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SC 75) (DTC144EE, SDTC144EE)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA600400 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (SOT 723) (DTC144EM3)Total Device DissipationTA = 25 C(Note 1)(Note 2)Derate above 25 C(Note 1)(Note 2) CThermal Resistance,(Note 1)Junction to Ambient(Note 2)RqJA480205 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 C1.

6 FR 4 @ Minimum FR 4 @ x Inch FR 4 @ 100 mm2, 1 oz. copper traces, still FR 4 @ 500 mm2, 1 oz. copper traces, still , MMUN2213L, MUN5213, DTC144EE, DTC144EM3, 2. THERMAL CHARACTERISTICSC haracteristicUnitMaxSymbolTHERMAL CHARACTERISTICS (SOT 1123) (NSBC144EF3)Total Device DissipationTA = 25 C(Note 3)(Note 4)Derate above 25 C(Note 3)(Note 4) CThermal Resistance,(Note 3)Junction to Ambient(Note 4)RqJA493421 C/WThermal Resistance, Junction to Lead(Note 3)RqJL193 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 C1. FR 4 @ Minimum FR 4 @ x Inch FR 4 @ 100 mm2, 1 oz. copper traces, still FR 4 @ 500 mm2, 1 oz. copper traces, still 3. ELECTRICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSC ollector Base Cutoff Current(VCB = 50 V, IE = 0)ICBO 100nAdcCollector Emitter Cutoff Current(VCE = 50 V, IB = 0)ICEO 500nAdcEmitter Base Cutoff Current(VEB = V, IC = 0)IEBO Base Breakdown Voltage(IC = 10 mA, IE = 0)V(BR)CBO50 VdcCollector Emitter Breakdown Voltage (Note 5)(IC = mA, IB = 0)V(BR)CEO50 VdcON CHARACTERISTICSDC Current Gain (Note 5)(IC = mA, VCE = 10 V)hFE80140 Collector Emitter Saturation Voltage (Note 5)(IC = 10 mA, IB = mA)VCE(sat) Voltage (off)(VCE = V, IC = 100 mA)Vi(off) Voltage (on)(VCE = V, IC = mA)Vi(on) VdcOutput Voltage (on)(VCC = V, VB = V, RL = kW)

7 VOL Voltage (off)(VCC = V, VB = V, RL = kW) VdcInput RatioR1 parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, CHARACTERISTICSMUN2213, MMUN2213L, MUN5213, DTC144EE, SDTC144EE, DTC144EM3 Figure 2. VCE(sat) vs. , INPUT VOLTAGE (V)TA= 25 C75 C25 CFigure 3. DC Current GainFigure 4. Output 203040 50IC, COLLECTOR CURRENT (mA)Figure 5. Output Current vs. Input Voltage100010IC, COLLECTOR CURRENT (mA)TA=75 C25 C 25 C10010110025 C75 C500 , REVERSE VOLTAGE (V)Figure 6.

8 Input Voltage vs. Output , COLLECTOR CURRENT (mA)25 C75 CVCE = 10 Vf = 10 kHzIE = 0 ATA = 25 CVO = 5 VVO = VIC/IB = 10TA= 25 CTA= 25 CVCE(sat), COLLECTOR EMITTER VOLTAGE (V)hFE, DC CURRENT , OUTPUT CAPACITANCE (pF)IC, COLLECTOR CURRENT (mA)Vin, INPUT VOLTAGE (V)MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, CHARACTERISTICS NSBC144EF3 Figure 7. VCE(sat) vs. IC1002030IC, COLLECTOR CURRENT (mA) 8. DC Current GainFigure 9. Output , COLLECTOR CURRENT (mA) , COLLECTOR CURRENT (mA)Figure 10. Output Current vs. Input 8 Vin, INPUT VOLTAGE (V)28 Figure 11. Input Voltage vs. Output Current50010 , REVERSE VOLTAGE (V)30 VCE(sat), COLLECTOR EMITTER VOLTAGE (V)IC/IB = 10 55 C25 CVCE = 10 VhFE, DC CURRENT GAINf = 10 kHzIE = 0 ATA = 25 , OUTPUT CAPACITANCE (pF)VO = 5 VIC, COLLECTOR CURRENT (mA)VO = VVin, INPUT VOLTAGE (V)10150 C 55 C25 C150 C11010 55 C25 C150 C 55 C25 C150 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic.

9 Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1. RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3.

10 ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2. CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2. SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1. GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1. CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2.