FDN340P - MOSFET - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2007 May, 2021 Rev. 71 Publication Order Number: FDN340P /DMOSFET Single, P-Channel,POWERTRENCH), LogicLevelFDN340 PGeneral DescriptionThis P Channel Logic Level MOSFET is produced usingON Semiconductor advanced POWERTRENCH process that hasbeen especially tailored to minimize the on state resistance and yetmaintain low gate charge for superior switching devices are well suited for portable electronics applications:load switching and power management, battery charging circuits, anddc dc 2 A, 20 V RDS(ON) = 70 mW @ VGS = V RDS(ON) = 110 mW @ VGS = V Low Gate Charge ( nC Typical) High Performance Trench Technology for Extremely Low RDS(ON) High Power Version of Industry Standard SOT 23 Package.

2 IdenticalPin Out to SOT 23 with 30% Higher Power Handling Capability These devices are Pb Free, Halogen Free/BFR Free and are detailed ordering and shipping information on page 3 ofthis data INFORMATIONMARKING DIAGRAMSOT 23 CASE 527 AGM = Date MAXIMUM RATINGSTA = 25 C unless otherwise notedSymbolParameterRatingsUnitVDSSD rain Source Voltage 20 VVGSSGate Source Voltage 8 VIDD rain CurrentContinuous (Note 1a)Pulsed 2 10 APDP ower Dissipation for Single Operation(Note 1a)(Note 1b) , TSTGO perating and Storage Junction Temperature Range 55 to +150_CStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICSS ymbolParameterRatingsUnitR JAThermal Resistance, Junction to Ambient (Note 1a)250 C/WR JCThermal Resistance, Junction to Case (Note 1)75 C/WELECTRICAL CHARACTERISTICS TA = 25 C unless otherwise notedSymbolParameterTest ConditionsMinTypMaxUnitOFF CHARACTERISTICSBVDSSD rain Source Breakdown VoltageVGS = 0 V, ID = 250 mA 20 VDBVDSSDTJB reakdown Voltage Temperature CoefficientID = 250 mA, Referenced to 25_C 12 mV/_CIDSSZero Gate Voltage Drain CurrentVDS = 16 V, VGS = 0 V 1mAVDS = 16 V, VGS = 0 V, TJ = 55_C 10 IGSSFGate Body Leakage, ForwardVGS = 8 V, VDS = 0 V 100nAIGSSRGate Body Leakage, ReverseVGS = 8 V, VDS = 0 V 100nAON CHARACTERISTICS (Note 2)VGS(th)Gate Threshold VoltageVDS = VGS, ID = 250 mA (th)

4 DTJGate Threshold Voltage Temperature CoefficientID = 250 mA, Referenced to 25_C 3 mV/_CRDS(on)Static Drain Source On ResistanceVGS = V, ID = 2 A 6070mWVGS = V, ID = 2 A, TJ = 125_C 77120 VGS = V, ID = A 82110ID(on)On State Drain CurrentVGS = V, VDS = 5 V 5 AgFSForward TransconductanceVDS = V, ID = 2 A 9 SDYNAMIC CHARACTERISTICS600 Input CapacitanceVDS = 10 V, VGS = 0 V, f = MHz 779 pF175 Output Capacitance 121 pF80 Reverse Transfer Capacitance 56 CHARACTERISTICS (continued)TA = 25 C unless otherwise notedSymbolUnitMaxTypMinTest ConditionsParameterSWITCHING CHARACTERISTICS (Note 2)td(on)Turn On Delay TimeVDD = 10 V, ID = 1 A,VGS = V, RGEN = 6 W 1020nstrTurn On Rise Time 910nstd(off)Turn Off Delay Time 2743nstfTurn Off Fall Time 1120nsQgTotal Gate ChargeVDS = 10 V, ID = A, VGS = V Source Charge nCQgdGate Drain Charge nCDRAIN SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISM aximum Continuous Drain Source Diode Forward Current Source Diode Forward VoltageVGS = 0 V, IS = A (Note 2) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

5 Productperformance may not be indicated by the Electrical Characteristics if operated under different :1. R JA is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the soldermounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user s board ) 250 C/W when mounted on a in2 pad of 2 oz copperb) 270 C/W when mounted on a 001 in2 pad of 2 oz copperScale 1:1 on letter size paper2. Pulse Test: Pulse Width < 300 s, Duty Cycle < MARKING AND ORDERING INFORMATION DeviceDevice MarkingPackageReel SizeTape WidthShipping FDN340P340 SOT 23(Pb Free)7 8 mm3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or CHARACTERISTICSF igure 1.

6 On Region CharacteristicsFigure 2. On Resistance Variation withDrain Current and Gate Voltage ID, Drain Current (A)RDS(ON) Normalized Drain Source On Resistance0123403691215 VDS, Drain to Source Voltage (V) ID, Drain Current (A) VVGS = V V V V VFigure 3. On Resistance Variation withTemperatureFigure 4. On Resistance Variation withGate to Source 50 250255075100125150 RDS(ON), Normalized Drain Source On Resistance (W)ID = 2 AVGS = V 3 V V VFigure 5. Transfer VGS, Gate to Source Voltage (V)TJ, Junction temperature (5C)RDS(ON) On Resistance (W)TA = 125 CTA = 25 6. Body Diode Forward VoltageVariation with Source Current and Temperature VGS, Gate to Source Voltage (V)ID, Drain Current (A)TA = 55 C125 C25 C VSD, Body Diode Forward Voltage (V) IS , Reserve Drain Current (A) 55 CTA = 125 C25 CVGS = 0 VID = 1 AVDS = 5 VVGS = CHARACTERISTICS (Continued)Figure 7.

7 Gate Charge CharacteristicsFigure 8. Capacitance Characteristics VDS, Drain to Source Voltage (V)Capacitance (pF)Qg,Gate Charge (nC) VDS, Drain to Source Voltage (V)Figure 9. Maximum Safe Operating AreaFigure 10. Single Pulse Maximum PowerDissipation ID, Drain Current (A)Figure 11. Transient Thermal Response CurveSingle Pulse Time (SEC) VDS, Drain Source Voltage (V)Power (W)t1, Time (sec)r(t), Normalized Effective Transient Thermal Resistance0125678943012345 10 V 15 V0510152002004006008001000ID = AVDS = 5 Vf = 1 MHz VGS = 0 PulseR JA = 270 C/W TA = 25 = 10 VSingle PulseR JA = 270 C/W TA = 25 CRDS(ON) LIMITDS1 s100 ms10 ms1 ms1 (t) = r(t) * RqJA RqJA = 270 C/WTJ TA = P * RqJA (t)Duty Cycle, D = t1 / t2t2t1P(pk)D = PulseThermal characterization performed using the conditions described in Note 1b.

8 Transient thermal response will change depending on the circuit board 23/SUPERSOTt 23, 3 LEAD, 527 AGISSUE ADATE 09 DEC 2019 XXX = Specific Device CodeM= Month CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G , mayor may not be present. Some products maynot follow the Generic DIAGRAM*XXXMGG(Note: Microdot may be in either location)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

9 ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 SOT 23/SUPERSOT 23, 3 LEAD, Semiconductor Components Industries, LLC, , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliatesand/or subsidiaries in the United States and/or other countries.

10 Onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual listing of onsemi s product/patent coverage may be accessed at onsemi reserves the right to make changes at any time to anyproducts or information herein, without notice. The information herein is provided as is and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.