Transcription of Germanium Mesa Transistor, PNP, for High–Speed …
1 NTE126 Germanium Mesa Transistor, PNP,for High Speed Switching ApplicationsTO 18 Type PackageAbsolute Maximum Ratings:Collector Emitter Voltage, Base Voltage, Base Voltage, Device Dissipation (TA = +25 C), above 25 Device Dissipation (TC = +25 C), above 25 Junction Temperature Range, TJ 65 to +100 Junction Temperature Range, Tstg 65 to +100 Characteristics: (TA = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitCollector Base Breakdown VoltageBVCBOIC = 100 A, IE = 015 VEmitter Base Breakdown VoltageBVEBOIE = 100 A, IC = VCollector Latch Up VoltageLVCEXVCC = VCollector Emitter Cutoff CurrentICESVCE = 15V 100 ACollector Base Cutoff CurrentICBOVCB = 6V, IE = 0 ADC Current GainhFEIC = 10mA, VCE = IC = 50mA, VCE = 1V40 IC = 100mA, VCE = 1V40 Collector Emitter Saturation VoltageVCE(sat)IC = 10mA, IB = 1mA = 50mA, IB = 5mA = 100mA, IB = 10mA Characteristics (Cont d).
2 (TA = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitBase Emitter Saturation VoltageVBE(sat)IC = 10mA, IB = = 50mA, IB = = 100mA, IB = Gain Bandwidth ProductfTIE = 20mA, VCB = , f = 100 MHz300 MHzOutput CapacitanceCobVCB = 10V, IE = 0, f = 1 MHz Transition CapacitanceCTeVEB = 1V On TimetonIC = 10mA, IB1 = 5mA, VBE(off) = 50nsIC = 100mA, IB1 = 5mA, VBE(off) = 50 Turn Off TimetoffIC = 10mA, IB1 = 1mA, IB2 = 85nsIC = 100mA, IB1 = 5mA, IB2 = 85 Total Control ChargeQTIC = 10mA, IB = 1mA 80pCIC = 100mA, IB = 5mA ( ) ( ) ( ) Dia ( ) Dia Max45 .041 ( ) ( )
