MBR0520LT1 - Surface Mount Schottky Power Rectifier

1 Semiconductor Components Industries, LLC, 2012 January, 2012 Rev. 61 Publication Order Number: MBR0520LT1 /DMBR0520LT1G,SBR80520L T1G,MBR0520LT3G,SBR80520LT3 GPreferred DevicesSurface MountSchottky Power RectifierPlastic SOD 123 PackageThe Schottky Power Rectifier employs the Schottky Barrierprinciple with a barrier metal that produces optimal forward voltagedrop reverse current tradeoff. Ideally suited for low voltage, highfrequency rectification, or as free wheeling and polarity protectiondiodes in Surface Mount applications where compact size and weightare critical to the system.

2 This package provides an alternative to theleadless 34 MELF style package. These state of the art devices havethe following features:Features Guardring for Stress Protection Very Low Forward Voltage ( V Max @ A, 25 C) 125 C Operating Junction Temperature Epoxy Meets UL 94 V 0 @ in Package Designed for Optimal Automated Board Assembly AEC Q101 Qualified and PPAP Capable SBR8 Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements All Packages are Pb Free*Mechanical Characteristics Polarity Designator: Cathode Band Weight: mg (approximately) Case.

3 Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes:260 C Max. for 10 Seconds ESD Ratings: Human Body Model = 3B Machine Model = C*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, Device CodeM= Date CodeG= Pb Free AMPERES, 20 VOLTSSOD 123 CASE 425 STYLE 1 MARKING DIAGRAMD evicePackageShipping ORDERING INFORMATIONMBR0520LT1 GSOD 123(Pb Free)3,000 / Tape & Reel **MBR0520LT3 GSOD 123(Pb Free)

4 10,000 / Tape & Reel ** For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 devices are recommended choices for future useand best overall value.(Note: Microdot may be in either location)SBR80520LT1 GSOD 123(Pb Free)3,000 / Tape & Reel **SBR80520LT3 GSOD 123(Pb Free)10,000 / Tape & Reel **8 mm Tape, 7 Reel** 8 mm Tape, 13 ReelB2 MGG1 MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3 RATINGSR atingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR20 VAverage Rectified Forward Current(Rated VR, TL = 90 C)IF(AV) Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

5 Temperature RangeTstg 65 to +150 COperating Junction TemperatureTJ 65 to +125 CVoltage Rate of Change (Rated VR)dv/dt1000V/msESD Ratings:Machine Model = CHuman Body Model = 3B> 400> 8000 VStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice CHARACTERISTICSC haracteristicSymbolValueUnitThermal Resistance; Junction to Ambient (Note 1)RqJA206 C/WThermal Resistance; Junction to LeadRqJL150 C/W1.

6 1 inch square pad size (1 x inch for each lead) on FR4 CHARACTERISTICSC haracteristicSymbolValueUnitMaximum Instantaneous Forward Voltage (Note 2)vFTJ = 25 CTJ = 100 CV(iF = Amps)(iF = Amps) Instantaneous Reverse Current (Note 2)IRTJ = 25 CTJ = 100 CmA(VR = 10 V)(Rated DC Voltage = 20 V)75 mA250 mA5 mA8 mA2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3 , REVERSE CURRENT ( A) , INSTANTANEOUS FORWARD CURRENT (AMPS)TJ = 100 C75 C25 C- 25 CvF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)Figure 1.

7 Typical Forward Voltage10,000100010001015202575 CVR, REVERSE VOLTAGE (VOLTS)Figure 2. Typical Reverse Current52000VR, REVERSE VOLTAGE (VOLTS)Figure 3. Typical Capacitance5101520251501000C, CAPACITANCE (pF) , REVERSE VOLTAGE (VOLTS)Figure 4. Typical Reverse 25 CTJ = + 25 CTJ = 100 CIR, REVERSE CURRENT ( A) TEMPERATURE ( C)Figure 5. Current Derating (Lead) p = SQUARE WAVE 10748188 AVERAGE FORWARD CURRENT (AMP) (AV), AVERAGE FORWARD CURRENT (AMP)Figure 6. Power (AV), AVERAGE Power DISSIPATION (WATT)10295109116123130 20TJ = 125 CIPKIAV + 20 5 IPKIAVSOD 123 CASE 425 04 ISSUE GDATE 07 OCT 2009 SCALE 5:1 NOTES:1.

8 DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: INCH. EbDALC12A1 DIM MINNOM DIAGRAM**For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT**This information is generic. Please refer to device datasheet for actual part marking. Pb Free indicator, G ormicrodot G , may or may not be = Specific Device CodeM= Date CodeG= Pb Free PackageXXXMGG1 STYLE 1:PIN 1. CATHODE2. mminches SCALE 10:1 q------q001010 (Note: Microdot may be in either location)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

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