MBR20100CT - Switch-mode Power Rectifiers

1 Semiconductor Components Industries, LLC, 2015 January, 2015 Rev. 11 Publication Order Number: MBR20100CT /DMBR2080 CTG,MBR2090 CTG,MBR20100 CTGS witch-modePower RectifiersThis series uses the schottky Barrier principle with a platinumbarrier metal. These state of the art devices have the followingfeatures:Features 20 A Total (10 A Per Diode Leg) Guard Ring for Stress Protection Low Forward Voltage 175 C Operating Junction Temperature Epoxy Meets UL 94 V 0 @ in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube These Devices are Pb Free and are RoHS Compliant*Mechanical Characteristics: Case: Epoxy, Molded Weight: grams (approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max.

2 For 10 Seconds*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 220 CASE 221 ASTYLE 6341 schottky BARRIERRECTIFIERS20 AMPERES80 100 VOLTS132, 42 MARKING DIAGRAMAY WWB20x0 GAKAA= Assembly LocationY= YearWW= Work WeekB20x0 = Device Codex= 8, 9 or 10G= Pb Free DeviceAKA= Polarity detailed ordering and shipping information in the packagedimensions section on page 2 of this data INFORMATIONMBR2080 CTG, MBR2090 CTG, RATINGS (Per Diode Leg)RatingSymbolMBRUnit2080CT2090CT20100 CTPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR8090100 VAverage Rectified Forward Current(Rated VR) TC = 133 CIF(AV)10 APeak Repetitive Forward Current(Rated VR, Square Wave, 20 kHz) TC = 133 CIFRM20 ANonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave,single phase, 60 Hz)IFSM150 APeak Repetitive Reverse Surge Current ( ms, kHz) Junction Temperature (Note 1)TJ*65 to +175 CStorage TemperatureTstg*65 to +175 CVoltage Rate of Change (Rated VR)dv/dt10,000V/msStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1 CHARACTERISTICSC haracteristicSymbolValueUnitMaximum Thermal ResistanceJunction to CaseJunction to C/WELECTRICAL CHARACTERISTICS (Per Diode Leg)CharacteristicSymbolValueUnitMaximum Instantaneous Forward Voltage (Note 2)(iF = 10 Amps, TC = 125 C)(iF = 10 Amps, TC = 25 C)(iF = 20 Amps, TC = 125 C)(iF = 20 Amps, TC = 25 C) Instantaneous Reverse Current (Note 2)(Rated dc Voltage, TC = 125 C)(Rated dc Voltage, TC = 25 C) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width = 300 ms, Duty Cycle INFORMATIOND evicePackageShippingMBR2080 CTGTO 220(Pb Free)50 Units / RailMBR2090 CTGTO 220(Pb Free)50 Units / RailMBR20100 CTGTO 220(Pb Free)50 Units / RailMBR2080 CTG, MBR2090 CTG, 1. Typical Forward Voltage Per DiodeFigure 2. Typical Reverse Current Per DiodeFigure 3. Typical Current Derating, Case, Per LegFigure 4. Typical Current Derating, Ambient, Per LegFigure 5. Average Power Dissipation andAverage , INSTANTANEOUS VOLTAGE (VOLTS)205010VR, REVERSE VOLTAGE (VOLTS)080TC, CASE TEMPERATURE ( C)150TA, AMBIENT TEMPERATURE ( C) CURRENT (AMPS) , INSTANTANEOUS FORWARD CURRENT (AMPS)IIIF(AV), AVERAGE FORWARD CURRENT (AMPS) , REVERSE CURRENT (mA)R10, AVERAGE FORWARD CURRENT (AMPS)F(AV) WAVEdcTJ = 25 C150 CTJ = 150 C125 C100 C10201510100120140 AVERAGE Power (WATTS)RATED VOLTAGEAPPLIEDSQUARE WAVEdcRATED VOLTAGE APPLIEDRqJC = 2 C/W(HEATSINK)RqJA = 16 C/W(NO HEATSINK)RqJA = 60 C/WSQUARE WAVEdcTA = 25 C125 C100 = pIPK/IAV = = 10 IPK/IAV = 220 CASE 221 AISSUE AKDATE 13 JAN 2022 SCALE 1:1 STYLE 1:PIN 1.

5 BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTOR4. EMITTERSTYLE 3:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 4:PIN 1. MAIN TERMINAL 12. MAIN TERMINAL 23. GATE4. MAIN TERMINAL 2 STYLE 7:PIN 1. CATHODE2. ANODE3. CATHODE4. ANODESTYLE 10:PIN 1. GATE2. SOURCE3. DRAIN4. SOURCESTYLE 5:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 8:PIN 1. CATHODE2. ANODE3. EXTERNAL TRIP/DELAY4. ANODESTYLE 6:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 9:PIN 1. GATE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 11:PIN 1. DRAIN2. SOURCE3. GATE4. SOURCESTYLE 12:PIN 1. MAIN TERMINAL 12.

6 MAIN TERMINAL 23. GATE4. NOT CONNECTEDMECHANICAL CASE OUTLINEPACKAGE DIMENSIONS98 ASB42148 BDOCUMENT NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1TO 220onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reservesthe right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitationspecial, consequential or incidental damages.

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