MBRS360T3 - Surface Mount Schottky Power Rectifier

1 Semiconductor Components Industries, LLC, 2014 March, 2020 Rev. 141 Publication Order Number: MBRS360T3 /DSurface MountSchottky Power RectifierMBRS360T3G,MBRS360BT3G,NRVBS360 T3G,NRVBS360BT3G,NRVBS360 BNT3 This device employs the Schottky Barrier principle in a large areametal to silicon Power diode. State of the art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes, in Surface mountapplications where compact size and weight are critical to the Small Compact Surface Mountable Package with J Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements.

2 AEC Q101 Qualified and PPAP Capable* These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V 0 Weight: 217 mg (Approximately), SMC95 mg (Approximately), SMB Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes:260 C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: Machine Model, C Human Body Model, 3 BDevicePackageShipping ORDERING INFORMATIONSMBCASE 403A 03 Schottky AMPERES, 60 For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 (Pb Free)2,500 / Tape & ReelB36= Specific Device CodeA= Assembly Location**Y= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)MARKING DIAGRAMSAYWWB36 GGMBRS360BT3 GSMB(Pb Free)2,500 / Tape & ReelNRVBS360T3G*SMC(Pb Free)2,500 / Tape & Reel2,500 / Tape & ReelNRVBS360BT3G*SMB(Pb Free)SMC 2 LEADCASE 403AC**The Assembly Location code (A) is front sideoptional.

3 In cases where the Assembly Location isstamped in the package, the front side assembly codemay be ,500 / Tape & ReelNRVBS360BT3G VF01*SMB(Pb Free)AYWWB36 GGNRVBS360 BNT3G*SMB(Pb Free)2,500 / Tape & ReelMBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, RATINGSR atingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR60 VAverage Rectified Forward CurrentIF(AV) @ TL = 137 @ TL = 127 CANonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)IFSM125 AStorage Temperature RangeTstg 65 to +175 COperating Junction Temperature (Note 1)TJ 65 to +175 CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1 CHARACTERISTICSC haracteristicSymbolValueUnitThermal Resistance, Junction to Lead (Note 2)SMC PackageSMB PackageRqJL1115 C/WThermal Resistance, Junction to Ambient (Note 2)SMC PackageSMB PackageRqJA136145 C/WThermal Resistance, Junction to Ambient (Note 3)SMC PackageSMB Package (Note 4)RqJA7173 C/WELECTRICAL CHARACTERISTICSM aximum Instantaneous Forward Voltage (Note 5)(iF = A, TJ = 25 C) Instantaneous Reverse Current (Note 5)(Rated dc Voltage, TJ = 25 C)(Rated dc Voltage, TJ = 100 C) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical Characteristics if operated under different Mounted with minimum recommended pad size, PC Board 1 inch square pad size (1 x inch for each lead) on FR4 Typical Value; 1 inch square pad size (1 x inch for each lead) on FR4 Pulse Test: Pulse Width = 300 ms, Duty Cycle , MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, ELECTRICAL CHARACTERISTICSVF, INSTANTANEOUS FORWARD VOLTAGE (V)Figure 1. Typical Forward VoltageFigure 2. Maximum Forward VoltageIF, INSTANTANEOUS FORWARDCURRENT (A)TJ = 25 CTJ = 150 CTJ = 100 CTJ = 40 CVF, INSTANTANEOUS FORWARD VOLTAGE (V)TJ = 25 CTJ = 150 CTJ = 100 CTJ = 40 = 175 , INSTANTANEOUS FORWARDCURRENT (A)TJ = 175 CVR, INSTANTANEOUS REVERSE VOLTAGE (V)Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse CurrentIR, INSTANTANEOUS REVERSECURRENT (A)TJ = 25 CTJ = 150 CTJ = 100 CVR, INSTANTANEOUS REVERSE VOLTAGE (V)IR, INSTANTANEOUS REVERSECURRENT (A)TJ = 25 CTJ = 150 CTJ = 100 +000 102030405060TJ = 175 +000 102030405060TJ = 175 CMBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, , LEAD TEMPERATURE ( C)Figure 5.

5 Current DeratingFigure 6. Forward Power DissipationIF(AV), AVERAGE FORWARD CURRENT (A)0401 23IO, AVERAGE FORWARD CURRENT (A) , AVERAGE Power DISSIPATION (W)SQUARE = 15 7. Typical Capacitance100010600102030VR, REVERSE VOLTAGE (V)100405070C, CAPACITANCE (pF)TJ = 25 = 175 C012345020406080100120140160180 MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, Type > min pad 1 ozRqJC = min pad 1 oz C/WP(pk)t1t2 DUTY CYCLE, D = t1/t2t, TIME (s)Figure 8. Thermal Response, Junction to Ambient, SMC Packager(t), TRANSIENT THERMAL = Type > min pad 1 ozRqJC = min pad 1 oz C/WP(pk)t1t2 DUTY CYCLE, D = t1/t2 Figure 9. Typical Thermal Response, Junction to Ambient, SMB PackagePULSE TIME (s) (t) ( C/W)Single Pulse50% Duty Cycle20%10%5%2%1%SMBCASE 403A 03 ISSUE JDATE 19 JUL 2012 SCALE 1:1 EbDcL1 LAA1 NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI , CONTROLLING DIMENSION: DIMENSION b SHALL BE MEASURED WITHIN DIMENSION = Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)*This information is generic.

6 Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM* mminches SCALE 8:1*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* REFDL1 HESCALE 1:1 AYWWXXXXXGGPOLARITY INDICATOROPTIONAL AS NEEDEDP olarity BandNon Polarity BandPolarity BandNon Polarity BandMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

7 ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 SMB Semiconductor Components Industries, LLC, 2 LEADCASE 403 ACISSUE BDATE 27 JUL 2017 XXXX= Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM**For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, :1. DIMENSIONING AND TOLERANCING PER ANME , CONTROLLING DIMENSION: DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLDFLASH SHALL NOT EXCEED PER DIMENSIONS D AND E TO BE DETERMINED AT DATUM DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION 1:1 TOP VIEWSIDE VIEWEND VIEW(Note: Microdot may be in either location)HDETAIL ADETAIL ASOLDERING FOOTPRINT* mminches SCALE 4 CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

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