MC34152 - MOSFET Driver, High Speed, Dual

1 Semiconductor Components Industries, LLC, 2014 September, 2014 Rev. 141 Publication Order Number: MC34152 /DMC34152, MC33152,NCV33152 MOSFET Driver, high speed , DualThe MC34152 /MC33152 are dual noninverting high speed driversspecifically designed for applications that require low current digitalsignals to drive large capacitive loads with high slew rates. Thesedevices feature low input current making them cmos /LSTTL logiccompatible, input hysteresis for fast output switching that isindependent of input transition time, and two high current totem poleoutputs ideally suited for driving power MOSFETs.

2 Also included isan undervoltage lockout with hysteresis to prevent system erraticoperation at low supply applications include switching power supplies, dc to dcconverters, capacitor charge pump voltage doublers/inverters, andmotor device is available in dual in line and surface mount Two Independent Channels with A Totem Pole Outputs Output Rise and Fall Times of 15 ns with 1000 pF Load cmos /LSTTL Compatible Inputs with Hysteresis Undervoltage Lockout with Hysteresis Low Standby Current Efficient high Frequency Operation Enhanced System Performance with Common Switching RegulatorControl ICs NCV Prefix for Automotive and Other Applications Requiring Siteand Change Controls These are Pb Free and Halide Free DevicesFigure 1.

3 Representative Diagram-+ Output A7100kDrive Output B5100kGND3 LogicInput ALogicInput BPDIP 8P SUFFIXCASE 626 MARKINGDIAGRAMS1818MC3x152P AWL YYWWGSOIC 8D SUFFIXCASE 75118x= 3 or 4A= Assembly LocationWL, L= Wafer LotYY, Y= YearWW, W = Work WeekG or G= Pb Free PackagePIN CONNECTIONS18 (Top View)27 Drive Output ALogic Input A36 VCCGND45 Drive Output BLogic Input B3x152 ALYWGG18 detailed ordering and shipping information in the packagedimensions section on page 10 of this data INFORMATION(Note: Microdot may be in either location) MC34152 , MC33152, NCV33152 RATINGSR atingSymbolValueUnitPower Supply VoltageVCC20 VLogic Inputs (Note 1)Vin to +VCCVD rive Outputs (Note 2)Totem Pole Sink or Source CurrentDiode Clamp Current (Drive Output to VCC)IOIO(clamp)

4 Dissipation and Thermal CharacteristicsD Suffix, Plastic Package Case 751 Maximum Power Dissipation @ TA = 50 CThermal Resistance, Junction to AirP Suffix, Plastic Package, Case 626 Maximum Power Dissipation @ TA = 50 CThermal Resistance, Junction to C/WW C/WOperating Junction TemperatureTJ+150 COperating Ambient TemperatureMC34152 Operating Ambient TemperatureMC33152 Operating Ambient TemperatureMC33152V, NCV33152TA0 to +70 40 to +85 40 to +125 CStorage Temperature RangeTstg 65 to +150 CElectrostatic Discharge Sensitivity (ESD) (Note 3)Human Body Model (HBM)Machine Model (MM)Charged Device Model (CDM)ESD20002001500 VStresses exceeding Maximum Ratings may damage the device.

5 Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice For optimum switching speed , the maximum input voltage should be limited to 10 V or VCC, whichever is Maximum package power dissipation limits must be ESD protection per following tests:JEDEC Standard JESD22 A114 F for HBMJEDEC Standard JESD22 A115 A for MMJEDEC Standard JESD22 C101D for , MC33152, NCV33152 CHARACTERISTICS (VCC = 12 V, for typical values TA = 25 C, for min/max values TA is the operating ambienttemperature range that applies [Note 4], unless otherwise noted.)

6 CharacteristicsSymbolMinTypMaxUnitLOGIC INPUTSI nput Threshold VoltageOutput Transition high to Low StateOutput Transition Low to high StateVIHVIL VInput CurrentHigh State (VIH = V)Low State (VIL = V)IIHIIL 10020300100mADRIVE OUTPUTO utput VoltageLow State (Isink = 10 mA)Low State (Isink = 50 mA)Low State (Isink = 400 mA) high State (Isource = 10 mA) high State (Isource = 50 mA) high State (Isource = 400 mA)VOLVOH VOutput Pull Down ResistorRPD 100 kWSWITCHING CHARACTERISTICS (TA = 25 C)Propagation Delay (CL = nF)Logic Input to: Drive Output Rise (10% Input to 10% Output)Drive Output Fall (90% Input to 90% Output)tPLH (IN/OUT)tPHL (IN/OUT) 5540120120nsDrive Output Rise Time (10% to 90%)CL = nFDrive Output Rise Time (10% to 90%)CL = nFtr 143630 nsDrive Output Fall Time (90% to 10%)CL = nFDrive Output Fall Time (90% to 10%)CL = nFtf 153230 nsTOTAL DEVICEP ower Supply CurrentStandby (Logic Inputs Grounded)Operating (CL = nF Drive Outputs 1 and 2, f = 100 kHz)ICC 18 VUNDERVOLTAGE LOCKOUTS tartup ThresholdVth Operating Voltage After Turn On (VCC)VCC(min) V4.

7 Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as = 0 C for MC34152 , 40 C for MC33152, 40 C for MC33152 VThigh = +70 C for MC34152 , +85 C for MC33152, +125 C for MC33152 VNCV33152: Tlow = 40 C, Thigh = +125 C. Guaranteed by , MC33152, NCV33152 2. Switching Characteristics Test CIrcuitFigure 3. Switching Waveform Definitions50-+ InputDrive +246+35 V0 V10%90%90%10%trtftPLHtPHLL ogic Inputtr, tf 10 nsDrive Output12 VFigure 4. Logic Input Current versus Input VoltageFigure 5. Logic Input Threshold Voltageversus TemperatureVin, INPUT VOLTAGE (V)TA, AMBIENT TEMPERATURE ( C) , INPUT CURRENT (mA)Vth, INPUT THRESHOLD VOLTAGE (V) 55- 250255075100125 Upper ThresholdLow State OutputVCC = 12 VVCC = 12 VTA = 25 CFigure 6.

8 Drive Output high to Low PropagationDelay versus Logic Input Overdrive VoltageFigure 7. Drive Output Low to high PropagationDelay versus Logic Input Overdrive Voltage20016012080400tPLH(In/Out), DRIVE OUTPUT PROPAGATION DELAY (ns) , INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)tPHL(In/Out), DRIVE OUTPUT PROPAGATION DELAY (ns)200160120804000 Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)1234 VCC = 12 VCL = nFTA = 25 COverdrive Voltage is with Respectto the Logic Input Upper ThresholdVCC = 12 VCL = nFTA = 25 COverdrive Voltage is with Respectto the Logic Input Lower ThresholdLower ThresholdHigh State OutputVth(upper)Vth(lower)

9 MC34152 , MC33152, NCV33152 , OUTPUT SATURATION VOLTAGE (V)Figure 8. Drive Output Clamp Voltageversus Clamp , OUTPUT CLAMP CURRENT (A)clampV VCCGNDHigh State Clamp (DriveOutput Driven Above VCC)120 Hz RateTA = 25 CVCC = 12 V80 ms Pulsed LoadLow State Clamp (DriveOutput Driven Below Ground) 9. Drive Output Saturation Voltageversus Load CurrentFigure 10. Drive Output Saturation Voltageversus , OUTPUT CLAMP CURRENT (A)VCCGNDS ource Saturation(Load to Ground)Sink Saturation(Load to VCC)0- 55- 250255075100125TA, AMBIENT TEMPERATURE ( C)Source Saturation(Load to Ground)satV Isink = 400 mASink Saturation(Load to VCC)Isource = 10 mAIsource = 400 mAVCCGNDI sink = 10 mAVCC = 12 V120 Hz RateTA = 25 CVCC = 12 V80 ms Pulsed LoadFigure 11.

10 Drive Output Rise TimeFigure 12. Drive Output Fall Time10 ns/DIV10 ns/DIV90% -10% -90% -10% -VCC = 12 VVin = 0 V to VCL = nFTA = 25 CVCC = 12 VVin = 0 V to VCL = nFTA = 25 C, OUTPUT CLAMP VOLTAGE (V), OUTPUT SATURATION VOLTAGE (V) MC34152 , MC33152, NCV33152 , SUPPLY CURRENT (mA)ICC, SUPPLY CURRENT (mA)Figure 13. Drive Output Rise and Fall Timeversus Load CapacitanceFigure 14. Supply Current versus DriveOutput Load CapacitanceFigure 15. Supply Current versus Input FrequencyFigure 16. Supply Current versus Supply VoltageCL, OUTPUT LOAD CAPACITANCE (nF)-tf, OUTPUT RISE FALL TIME(ns) = 12 VVIN = 0 V to VTA = 25 CCL, OUTPUT LOAD CAPACITANCE (nF) = 12 VBoth Logic Inputs Driven 0 V to V 50% Duty CycleBoth Drive Outputs LoadedTA = 25 Cf = 500 kHzf = 200 kHzf = 50 kHz80604020010 MICC, SUPPLY CURRENT (mA)1234 Both Logic Inputs Driven 0 V to V, 50% Duty CycleBoth Drive Outputs LoadedTA = 25 C1 - VCC = 18 V, CL = nF 2 - VCC = 12 V, CL = nF3 - VCC = 18 V, CL = nF4 - VCC = 12 V, CL = nFf, INPUT FREQUENCY (Hz)VCC, SUPPLY VOLTAGE (V)