NVMFS5C460NL MOSFET – Power, Single N-Channel

1 DATA Semiconductor Components Industries, LLC, 2016 March, 2023 Rev. 81 Publication Order Number: NVMFS5C460NL /DMOSFET - power , SingleN- channel , DFN5/DFNW540 V, mW, 78 ANVMFS5C460 NLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C460 NLWF Wettable Flank Option for Enhanced OpticalInspection AEC Q101 Qualified and PPAP Capable These Devices are Pb Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25 C unless otherwise noted)ParameterSymbolValueUnitDrain to Source VoltageVDSS40 VGate to Source VoltageVGS 20 VContinuous Drain Current RqJC (Notes 1, 3)

2 SteadyStateTC = 25 CID78 ATC = 100 C55 power DissipationRqJC (Note 1)TC = 25 CPD50 WTC = 100 C25 Continuous Drain Current RqJA (Notes 1, 2, 3)SteadyStateTA = 25 CID21 ATA = 100 C15 power DissipationRqJA (Notes 1, 2)TA = 25 = 100 Drain CurrentTA = 25 C, tp = 10 msIDM396 AOperating Junction and Storage TemperatureRangeTJ, Tstg 55 to+175 CSource Current (Body Diode)IS56 ASingle pulse Drain to Source Avalanche Energy (IL(pk) = 5 A)EAS107mJLead Temperature for Soldering Purposes(1/8 from case for 10 s)TL260 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

3 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be RESISTANCE MAXIMUM RATINGSP arameterSymbolValueUnitJunction to Case Steady C/WJunction to Ambient Steady State (Note 2)RqJA421. The entire application environment impacts the thermal resistance values shown,they are not constants and are only valid for the particular conditions Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu Maximum current for pulses as long as 1 second is higher but is dependenton pulse duration and duty (4)S (1,2,3)N channel MOSFETD (5,6)SSSGDDDDSee detailed ordering, marking and shipping information in thepackage dimensions section on page 5 of this data INFORMATIONXXXXXX = 5C460 LXXXXXX = ( NVMFS5C460NL ) orXXXXXX = 460 LWFXXXXXX = (NVMFS5C460 NLWF)A= Assembly LocationY= YearW= Work WeekZZ= Lot TraceabilityV(BR)DSSRDS(ON) MAXID MAX40 mW @ 10 V78 mW @ VMARKING DIAGRAMDFN5 (SO 8FL)CASE 488AA1 DFNW5(FULL CUT SO8FL WF)

4 CASE CHARACTERISTICS (TJ = 25 C unless otherwise specified)ParameterSymbolTest ConditionMinTypMaxUnitOFF CHARACTERISTICSD rain to Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 250 mA40 VDrain to Source Breakdown VoltageTemperature CoefficientV(BR)DSS/TJ21mV/ CZero Gate Voltage Drain CurrentIDSSVGS = 0 V,VDS = 40 VTJ = 25 C10mATJ = 125 C250 Gate to Source Leakage CurrentIGSSVDS = 0 V, VGS = 20 V100nAON CHARACTERISTICS (Note 4)Gate Threshold VoltageVGS(TH)VGS = VDS, ID = 40 Temperature CoefficientVGS(TH)/TJ CDrain to Source On ResistanceRDS(on)VGS = VID = 35 = 10 VID = 35 TransconductancegFSVDS =15 V, ID = 35 A72 SCHARGES, CAPACITANCES & GATE RESISTANCEI nput CapacitanceCISSVGS = 0 V, f = 1 MHz, VDS = 25 V1300pFOutput CapacitanceCOSS530 Reverse Transfer CapacitanceCRSS25 Total Gate ChargeQG(TOT)VGS = 10 V, VDS = 20 V; ID = 35 A23nCTotal Gate ChargeQG(TOT)VGS = V, VDS = 20 V.

5 ID = 35 A11nCThreshold Gate ChargeQG(TH) to Source to Drain CHARACTERISTICS (Note 5)Turn On Delay Timetd(ON)VGS = V, VDS = 20 V,ID = 35 A, RG = 1 Off Delay Timetd(OFF)17 Fall SOURCE DIODE CHARACTERISTICSF orward Diode VoltageVSDVGS = 0 V,IS = 35 ATJ = 25 = 125 Recovery TimetRRVGS = 0 V, dIs/dt = 100 A/ms,IS = 35 A29nsCharge Timeta14 Discharge Timetb14 Reverse Recovery ChargeQRR12nCProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different pulse Test: pulse width v 300 ms, duty cycle v 2%.

6 5. Switching characteristics are independent of operating junction CHARACTERISTICS02040507090100012345 Figure 1. On Region CharacteristicsFigure 2. Transfer CharacteristicsVDS, DRAIN TO SOURCE VOLTAGE (V)VGS, GATE TO SOURCE VOLTAGE (V)Figure 3. On Resistance vs. Gate to SourceVoltageFigure 4. On Resistance vs. Drain Current andGate VoltageVGS, GATE TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)Figure 5. On Resistance Variation withTemperatureFigure 6. Drain to Source Leakage Currentvs. VoltageTJ, JUNCTION TEMPERATURE ( C)VDS, DRAIN TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)ID, DRAIN CURRENT (A)RDS(on), DRAIN TO SOURCE RESISTANCE (mW)RDS(on), DRAIN TO SOURCE RESISTANCE (mW)RDS(on), NORMALIZED DRAIN TO SOURCE RESISTANCEIDSS, LEAKAGE (nA)TJ = 125 CTJ = 25 CTJ = 55 CTJ = 25 CID = 35 ATJ = 25 CVGS = VVGS = 10 VVGS = 10 VID = 35 ATJ = 125 CTJ = 85 CVDS = 10 VTJ = 175 CVGS = V to 10 V246810121416182023 4 5 68 50 2502550751001251501751010010001000010000 05 CHARACTERISTICSF igure 7.

7 Capacitance VariationFigure 8. Gate to Source vs. Total ChargeVDS, DRAIN TO SOURCE VOLTAGE (V)QG, TOTAL GATE CHARGE (nC)Figure 9. Resistive Switching Time Variationvs. Gate ResistanceFigure 10. Diode Forward Voltage vs. CurrentRG, GATE RESISTANCE (W)VSD, SOURCE TO DRAIN VOLTAGE (V)Figure 11. Safe Operating AreaFigure 12. IPEAK vs. Time in AvalancheVDS (V)TIME IN AVALANCHE (s)C, CAPACITANCE (pF)VGS, GATE TO SOURCE VOLTAGE (V)t, TIME (ns)IS, SOURCE CURRENT (A)ID, DRAIN CURRENT (A)IPEAK, (A)VGS = 0 VTJ = 25 Cf = 1 MHzCISSCOSSCRSSVDS = 20 VTJ = 25 CID = 35 AQGSQGDVGS = VVDS = 20 VID = 35 Atd(off)td(on)tftrTJ = 125 CTJ = 25 CTJ = 55 CTJ (initial)= 25 CRDS(on) LimitThermal LimitPackage Limit1 ms10 msTC = 25 CVGS 10 VSingle Pulse11001000100000 41E 310E 210515253551513579 VGS = 0 ms1TJ (initial)= 100 13.

8 Thermal CharacteristicsPULSE TIME (sec)RqJA ( C/W) Single Pulse50% Duty Cycle20%10%5%2%1%DEVICE ORDERING INFORMATIOND eviceMarkingPackageShipping NVMFS5C460 NLT1G5C460 LDFN5(Pb Free)1500 / Tape & ReelNVMFS5C460 NLWFT1G460 LWFDFNW5(Pb Free, Wettable Flanks)1500 / Tape & ReelNVMFS5C460 NLT3G5C460 LDFN5(Pb Free)5000 / Tape & ReelNVMFS5C460 NLWFT3G460 LWFDFNW5(Pb Free, Wettable Flanks)5000 / Tape & ReelNVMFS5C460 NLAFT1G5C460 LDFN5(Pb Free)1500 / Tape & ReelNVMFS5C460 NLAFT1G YE5C460 LDFN5(Pb Free)1500 / Tape & ReelNVMFS5C460 NLWFAFT1G460 LWFDFNW5(Pb Free, Wettable Flanks)1500 / Tape & ReelNVMFS5C460 NLWFAFT3G460 LWFDFNW5(Pb Free, Wettable Flanks)5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 DIMENSIONSDFNW5 5x6 (FULL CUT SO8FL WF)CASE 507 BAISSUE _DFN5 5x6, (SO 8FL)CASE 488 AAISSUE NDATE 25 JUN 2018 SCALE 2:1 NOTES:1.

9 DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: DIMENSION D1 AND E1 DO NOT INCLUDEMOLD FLASH PROTRUSIONS OR = Specific Device CodeA= Assembly LocationY= YearW= Work WeekZZ= Lot Traceability1234 TOP VIEWSIDE VIEWBOTTOM X2 A14L1 AA1c4 XCSEATINGPLANEGENERICMARKING DIAGRAM* 1:PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAINM*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* 5(EXPOSED PAD)STYLE 2:PIN 1. ANODE 2.

10 ANODE 3. ANODE 4. NO CONNECT 5. : *This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be present. Some productsmay not follow the Generic CASE OUTLINEPACKAGE DIMENSIONS98 AON14036 DDOCUMENT NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 DFN5 5x6, (SO 8FL)onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries.