NCV8402 - Self-Protected Low Side Driver with …

1 Semiconductor Components Industries, LLC, 2016 October, 2019 Rev. 261 Publication Order Number: NCV8402 /DSelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402, NCV8402 ANCV8402/A is a three terminal protected Low side Smart Discretedevice. The protection features include overcurrent, overtemperature,ESD and integrated Drain to Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshautomotive Short Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection NCV8402 AMNWT1G Wettable Flanks Product dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free and are RoHS CompliantTypical Applications Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits Automotive / IndustrialDrainSourceTemperatureLimitGat eInputCurrentLimitCurrentSenseOvervoltag eProtectionESD *Max current limit value is dependent on input 223 CASE 318 ESTYLE 3 MARKING DIAGRAMSV(BR)DSS(Clamped)RDS(ON) TYPID MAX42 V165 mW @ 10 A*A= Assembly LocationY= YearW or WW = Work Weekxxxxx = V8402 or 8402AG= Pb Free Package1(Note.)

2 Microdot may be in either location)1 AYWxxxxxGG234 GATEDRAINSOURCEDRAIN234 DFN6 CASE 506 AXxxxxxAYWWG1 See detailed ordering and shipping information on page 11 ofthis data INFORMATIONDFN6 PACKAGE PIN DESCRIPTION*Pins 4, 5, 6 are internally shorted is recommended to short these pins #SymbolDescription1 GGate Input2 NCNo Connect3 NCNo Connect4S*Source5S*Source6S*Source7 EPADD rain11 DFN6 (WF)CASE 506 DKxxxxxAYWWG1 NCV8402 , RATINGS (TJ = 25 C unless otherwise noted)RatingSymbolValueUnitDrain to Source Voltage Internally ClampedVDSS42 VDrain to Gate Voltage Internally Clamped(RG = MW)VDGR42 VGate to Source VoltageVGS 14 VContinuous Drain CurrentIDInternally LimitedTotal Power Dissipation SOT 223 Version@ TA = 25 C (Note 1)@ TA = 25 C (Note 2)@ TS = 25 C) Power Dissipation DFN Version@ TA = 25 C (Note 1)@ TA = 25 C (Note 2)@ TS = 25 C) Continuous Drain Current SOT 223 Version@ TA = 25 C (Note 1)@ TA = 25 C (Note 2)@ TS = 25 C) Continuous Drain Current DFN Version@ TA = 25 C (Note 1)@ TA = 25 C (Note 2)@ TS = 25 C) ResistanceSOT223 Junction to Ambient Steady State (Note 1)SOT223 Junction to Ambient Steady State (Note 2)SOT223 Junction to Soldering Point Steady StateDFN Junction to Ambient Steady State (Note 1)DFN Junction to Ambient Steady State (Note 2)DFN Junction to Soldering Point Steady StateRqJARqJARqJSRqJARqJARqJS11472141637 014 C/WSingle Pulse Drain to Source Avalanche Energy(VDD = 32 V, VG = V, IPK = A, L = 300 mH, RG(ext) = 25 W)EAS150mJLoad Dump Voltage(VGS = 0 and 10 V, RI = W, RL = W, td = 400 ms)VLD55 VOperating Junction TemperatureTJ 40 to 150 CStorage TemperatureTstg 55 to 150 CStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be Surface mounted onto min pad FR4 PCB, (2 oz. Cu, thick).2. Surface mounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, thick).DRAINSOURCEGATEVDSVGSIDIG+ + Figure 1. Voltage and Current ConventionNCV8402, CHARACTERISTICS (TJ = 25 C unless otherwise noted)ParameterTest ConditionSymbolMinTypMaxUnitOFF CHARACTERISTICSD rain to Source Breakdown Voltage(Note 3)VGS = 0 V, ID = 10 mA, TJ = 25 CV(BR)DSS424655 VVGS = 0 V, ID = 10 mA, TJ = 150 C(Note 5)404555 Zero Gate Voltage Drain CurrentVGS = 0 V, VDS = 32 V, TJ = 25 Gate Voltage Drain CurrentVGS = 0 V, VDS = 32 V, TJ = 150 C(Note 5) Input CurrentVDS = 0 V, VGS = VIGSSF50100mAON CHARACTERISTICS (Note 3)Gate Threshold VoltageVGS = VDS, ID = 150 mAVGS(th) Threshold Temperature CoefficientVGS(th) mV/ CStatic Drain to Source On ResistanceVGS = 10 V, ID = A, TJ = 25 CRDS(on)165200mWVGS = 10 V, ID = A, TJ = 150 C(Note 5)305400 VGS = V, ID = A, TJ = 25 C195230 VGS = V, ID = A, TJ = 150 C(Note 5)360460 VGS = V, ID = A, TJ = 25 C190230 VGS = V, ID = A, TJ = 150 C(Note 5)

4 350460 Source Drain Forward On VoltageVGS = 0 V, IS = CHARACTERISTICS (Note 5)Turn On Time (10% VIN to 90% ID)VGS = 10 V, VDD = 12 V,ID = A, RL = Wton2530msTurn Off Time (90% VIN to 10% ID)toff120200msTurn On Rise Time (10% ID to 90% ID)trise2025msTurn Off Fall Time (90% ID to 10% ID)tfall5070msSlew Rate ON (70% to 50% VDD) Rate OFF (50% to 70% VDD) PROTECTION CHARACTERISTICS (TJ = 25 C unless otherwise noted) (Note 4)Current LimitVDS = 10 V, VGS = V, TJ = 25 = 10 V, VGS = V, TJ = 150 C(Note 5) = 10 V, VGS = 10 V, TJ = 25 = 10 V, VGS = 10 V, TJ = 150 C(Note 5) Limit (Turn off)VGS = V (Note 5)TLIM(off)150175200 CThermal HysteresisVGS = VDTLIM(on)15 Temperature Limit (Turn off)VGS = 10 V (Note 5)TLIM(off)150165185 Thermal HysteresisVGS = 10 VDTLIM(on)15 GATE INPUT CHARACTERISTICS (Note 5)Device ON Gate Input CurrentVGS = 5 V ID = AIGON50mAVGS = 10 V ID = A400 Current Limit Gate Input CurrentVGS = 5 V, VDS = 10 = 10 V, VDS = 10 Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.

5 4. Fault conditions are viewed as beyond the normal operating range of the Not subject to production , CHARACTERISTICS (TJ = 25 C unless otherwise noted)ParameterUnitMaxTypMinSymbolTest ConditionGATE INPUT CHARACTERISTICS (Note 5)Thermal Limit Fault Gate Input CurrentVGS = 5 V, VDS = 10 = 10 V, VDS = 10 ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) (Note 5)Electro Static Discharge CapabilityHuman Body Model (HBM)ESD4000 VMachine Model (MM)4003. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.4. Fault conditions are viewed as beyond the normal operating range of the Not subject to production parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different , PERFORMANCE CURVES11010100 Figure 2.

6 Single Pulse Maximum Switch offCurrent vs. Load InductanceL (mH)IL(max) (A)TJstart = 25 CTJstart = 150 C10100100010100 Figure 3. Single Pulse Maximum SwitchingEnergy vs. Load InductanceL (mH)Emax (mJ)TJstart = 25 CTJstart = 150 4. Single Pulse Maximum InductiveSwitch off Current vs. Time in ClampTIME IN CLAMP (ms)IL(max) (A)TJstart = 25 CTJstart = 150 C101001000110 Figure 5. Single Pulse Maximum InductiveSwitching Energy vs. Time in ClampTIME IN CLAMP (ms)Emax (mJ)TJstart = 25 CTJstart = 150 CFigure 6. On state Output Characteristics01234512345 VDS = 10 V25 C100 C150 C 40 CID (A)VGS (V)Figure 7. Transfer CharacteristicsVDS (V)ID (A)VGS = V3 V4 V5 V6 V8 V10 VTA = 25 V678 NCV8402 , PERFORMANCE CURVES010020030040045678910 Figure 8. RDS(on) vs. Gate Source VoltageVGS (V)RDS(on) (mW)150 C, ID = A150 C, ID = A100 C, ID = A100 C, ID = A25 C, ID = A25 C, ID = A 40 C, ID = A 40 C, ID = C, VGS = 10 V150 C, VGS = 5 V100 C, VGS = 5 V100 C, VGS = 10 V25 C, VGS = 5 V25 C, VGS = 10 V 40 C, VGS = 5 V 40 C, VGS = 10 VFigure 9.

7 RDS(on) vs. Drain CurrentID (A)RDS(on) (mW) 40 20020406080100 120 140 VGS = 5 VVGS = 10 VID = AFigure 10. Normalized RDS(on) vs. TemperatureT ( C)RDS(on) (NORMIALZIZED)2345678567891025 C100 C150 C 40 CFigure 11. Current Limit vs. Gate SourceVoltageVGS (V)ILIM (A)VDS = 10 V2345678 40 20020406080100 120 140 Figure 12. Current Limit vs. JunctionTemperatureTJ ( C)ILIM (A)VDS = 10 VVGS = 5 VVGS = 10 13. Drain to Source Leakage CurrentVDS (V)IDSS (mA)VGS = 0 V25 C100 C150 C 40 CNCV8402, PERFORMANCE 40 20020406080100 120 140 Figure 14. Normalized Threshold Voltage ( C)NORMALIZED VGS(th) (V)ID = 150 mAVGS = 15. Source Drain Diode ForwardCharacteristicsIS (A)VSD (V)25 C100 C150 C 40 CVGS = 0 V050100150200345678910td(off)td(on)tftrF igure 16. Resistive Load Switching Time Source VoltageVGS (V)TIME (ms)ID = AVDD = 12 VRG = 0 17. Resistive Load SwitchingDrain Source Voltage Slope vs.

8 Gate SourceVoltageVGS (V)DRAIN SOURCE VOLTAGE SLOPE (V/ms)ID = AVDD = 12 VRG = 0 W dVDS/dt(on)dVDS/dt(off)02550751000400800 120016002000 TIME (ms)Figure 18. Resistive Load Switching Time ResistanceRG (W)tf, (VGS = 10 V)tf, (VGS = 5 V)td(off), (VGS = 10 V)tr, (VGS = 5 V)td(off), (VGS = 5 V)tr, (VGS = 10 V)td(on), (VGS = 5 V)td(on), (VGS = 10 V)ID = AVDD = 12 (off), VGS = 5 V dVDS/dt(on), VGS = 10 V dVDS/dt(on), VGS = 5 VdVDS/dt(off), VGS = 10 VFigure 19. Drain Source Voltage Slope duringTurn On and Turn Off vs. Gate ResistanceRG (W)DRAIN SOURCE VOLTAGE SLOPE (V/ms)ID = AVDD = 12 VNCV8402, PERFORMANCE Pulse50% Duty Cycle20%10%5%2%1%PULSE WIDTH (sec)RqJA 788 mm2 C/WFigure 20. Transient Thermal Resistance SOT 223 Pulse50% Duty Cycle20%10%5%2%1%PULSE WIDTH (sec)RqJA 788 mm2 C/WFigure 21. Transient Thermal Resistance DFN PackageNCV8402, CIRCUITS AND WAVEFORMSDUTGDSRLVDDIDSVINF igure 22.

9 Resistive Load Switching Test CircuitRG+ td(on) + triseVINIDS10%10%90%90%Figure 23. Resistive Load Switching Waveforms10%90%VDStd(off) + tfallNCV8402, CIRCUITS AND WAVEFORMSVDDIDSVINLVDStpFigure 24. Inductive Load Switching Test CircuitDUTGDSRG+ 0 V5 VTavVINIDSVDSTpVDS(on)Ipk0 VDDV(BR)DSSF igure 25. Inductive Load Switching WaveformsNCV8402, INFORMATIOND evice*PackageShipping NCV8402 STT1 GSOT 223(Pb Free)1000 / Tape & ReelNCV8402 ASTT1 GNCV8402 STT3 GSOT 223(Pb Free)4000 / Tape & ReelNCV8402 ASTT3 GNCV8402 AMNT2 GDFN6(Pb Free)2000 / Tape & ReelNCV8402 AMNWT1 GDFN6(Pb Free, Wettable Flank)3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and 223 (TO 261)CASE 318E 04 ISSUE RDATE 02 OCT 2018 SCALE 1:1qqMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

10 ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 2 SOT 223 (TO 261) Semiconductor Components Industries, LLC, 223 (TO 261)CASE 318E 04 ISSUE RDATE 02 OCT 2018 STYLE 4:PIN 1. SOURCE2. DRAIN3. GATE4. DRAINSTYLE 6:PIN 1. RETURN2. INPUT3. OUTPUT4. INPUTSTYLE 8:CANCELLEDSTYLE 1:PIN 1. BASE2.