MGSF2N02EL, MVSF2N02EL Power MOSFET

1 Semiconductor Components Industries, LLC, 2002 May, 2019 Rev. 51 Publication Order Number: mgsf2n02el /DMGSF2N02EL,MVSF2N02 ELMOSFET N-Channel, A, 20 VThese miniature surface mount mosfets low RDS(on) assureminimal Power loss and conserve energy, making these devices idealfor use in space sensitive Power management Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT 23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature AEC Q101 Qualified and PPAP Capable MVSF2N02EL These Devices are Pb Free and are RoHS CompliantApplications DC DC Converters Power Management in Portable and Battery Powered Products, ie:Computers, Printers, PCMCIA Cards, Cellular and CordlessTelephonesMAXIMUM RATINGS (TJ = 25 C unless otherwise noted)RatingSymbolValueUnitDrain to Source VoltageVDSS20 VdcGate to Source Voltage ContinuousVGS Current Continuous @ TA = 25 C Single Pulse (tp = 10 ms) Power Dissipation @ TA = 25 and Storage TemperatureRangeTJ, Tstg 55 to150 CThermal ResistanceJunction to Ambient (Note 1)Thermal ResistanceJunction to Ambient (Note 2)RqJA100300 C/WMaximum Lead Temperature for SolderingPurposes, 1/8 from case for 10 secondsTL260 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be 1 Pad, t < 10 Min pad, steady ChannelSOT 23 CASE 318 STYLE 21 MARKINGDIAGRAMPIN A, 20 VRDS(on) = 85 mW (max)See detailed ordering and shipping information in the packagedimensions section on page 2 of this data INFORMATION1NT MGGxxx= Specific Device CodeM= Date CodeG= Pb Free , CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSD rain to Source Breakdown Voltage (Note 3)(VGS = 0 Vdc, ID = 10 mAdc)Temperature Coefficient (Positive)V(BR)DSS20 22 VdcmV/ CZero Gate Voltage Drain Current(VDS = 20 Vdc, VGS = 0 Vdc)(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125 C)IDSS Source Leakage Current (VGS = $ Vdc, VDS = 0 Vdc)IGSS "100nAON CHARACTERISTICS (Note 3)Gate Source Threshold Voltage(VDS = VGS, ID = 250 mAdc)Threshold Temperature Coefficient (Negative)VGS(th) VdcmV/ CStatic Drain to Source On Resistance(VGS = Vdc, ID = A)(VGS = Vdc, ID = A)RDS(on) 7810585115mWDYNAMIC CHARACTERISTICSI nput Capacitance(VDS = Vdc, VGS = 0 V,f = MHz)Ciss 150 pFOutput CapacitanceCoss 130 Transfer CapacitanceCrss 45 SWITCHING CHARACTERISTICS (Note 4)Turn On Delay Time(VDD = 16 Vdc, ID = Adc,Vgs = V, RG = W)td(on) nsRise Timetr 95 Turn Off Delay Timetd(off) 28 Fall Timetf 125 Gate Charge(VDS = 16 Vdc, ID = Adc,VGS = Vdc) (Note 3)QT nCQgs Qgd SOURCE DRAIN DIODE CHARACTERISTICSF orward Voltage(IS = Adc, VGS = 0 Vdc) (Note 3)

3 VSD VReverse Recovery Time(IS = Adc, VGS = 0 Vdc,dlS/ dt = 100 A/ms) (Note 3)trr 104 nsta 42 tb 62 Reverse Recovery Stored ChargeQRR mCProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.4. Switching characteristics are independent of operating junction INFORMATIOND evicePackageShipping MGSF2N02 ELT1 GSOT 23(Pb Free)3,000 / Tape & ReelMVSF2N02 ELT1G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.*MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and , = 3 VVGS = VVGS = VVGS = VVGS = VTJ = 25 CVGS = VVGS = 7 VVGS = 5 = 55 CTJ = 100 CVDS w 10 = 25 = 25 CVGS = 50 250255075100125150TJ, JUNCTION TEMPERATURE ( C)ID = AVGS = V1010010001000048121620 VGS = 0 VTJ = 150 CTJ = 100 CFigure 1.

4 On Region CharacteristicsFigure 2. Transfer CharacteristicsFigure 3. On Resistance vs. Gate to Source VoltageFigure 4. On Resistance vs. Gate VoltageFigure 5. On Resistance Variation with TemperatureFigure 6. Drain to Source Leakage Current vs. VoltageID, DRAIN CURRENT (AMPS)ID, DRAIN CURRENT (AMPS)RDS(on), DRAIN TO SOURCE RESISTANCE (W)RDS(on), DRAIN TO SOURCE RESISTANCE (W)ID = ARDS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED)IDSS, LEAKAGE (nA)VDS, DRAIN TO SOURCE VOLTAGE (V)VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENTS (AMPS)VGS, GATE TO SOURCE VOLTAGE (V)VDS, DRAIN TO SOURCE VOLTAGE (V)VGS = VMGSF2N02EL, CHARACTERISTICSC, CAPACITANCE (pF)DRAIN TO SOURCE VOLTAGE (VOLTS)0501001502002503003500 4 8 121620TJ = 25 CCissCossCrssQg, TOTAL GATE CHARGE, (nC) VDS, DRAIN TO SOURCE VOLTAGE (VOLTS)0123450123ID = ATJ = 25 CQTQ2Q1t, TIME (ns)1101001000110100 VDD = 16 VID = AVGS = Vtd(on)td(off) 7.

5 Capacitance VariationFigure 8. Gate to Source Voltage vs. Total ChargeFigure 9. Resistive Switching Time Variation ResistanceFigure 10. Diode Forward Voltage vs. CurrentVGS = VTJ = 25 CVGS, GATE TO SOURCE VOLTAGE (V)IS, SOURCE CURRENT (AMPS)RG, GATE RESISTANCE (W)VSD, SOURCE TO DRAIN VOLTAGE (V)SOT 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1.

6 RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2. CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2.

7 SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1. GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1. CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2. ANODE 3. ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

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