NPN SILICON RF TRANSISTOR NE856 SERIES - ce L

1 NPN SILICON RF TRANSISTOR . NE856 SERIES . NEC's NPN SILICON HIGH. FREQUENCY TRANSISTOR . D. FEATURES. HIGH GAIN BANDWIDTH PRODUCT: UE. fT = 7 GHz E. LOW NOISE FIGURE: dB at 1 GHz B. HIGH COLLECTOR CURRENT: 100 mA. HIGH RELIABILITY METALLIZATION. 00 (CHIP) 35 (MICRO-X). LOW COST. IN. DESCRIPTION. NEC's NE856 SERIES of NPN epitaxial SILICON transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 SERIES offers excellent performance and reliability at low cost.

2 This is 32 (TO-92) 34 (SOT 89 STYLE). NT. achieved by NEC's titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. The NE856 SERIES is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. 19 (3 PIN ULTRA SUPER. MINI MOLD). O. 18 (SOT 343 STYLE). NE85600. Maximum Associated Gain, Maximum Stable Gain, NOISE FIGURE AND GAIN. vs. FREQUENCY. Associated Gain, MAG, MSG, GA (dB). VCC = 10 V, IC 7 mA. SC. 20. MSG. GA 15. Noise Figure, NF (dB).

3 MAG. 10. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE). 5. NFMIN. DI. 2 3 4 5. Frequency, f (GHz). 39 (SOT 143 STYLE) 39R (SOT 143R STYLE). The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005. NE856 SERIES . ELECTRICAL CHARACTERISTICS (TA = 25 C). PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632. EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355. PACKAGE OUTLINE 00 (CHIP) 18 19 30 32. SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX.

4 FT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz VCE = 3 V, IC = 7 mA GHz D. NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB VCE = 10 V, IC = 7 mA, f = 2 GHz dB GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 13 12 10. UE. f = 2 GHz dB 10 7 6. |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11 13 12 12 f = 2 GHz dB 7 9 7 6. hFE Forward Current Gain2 at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300. VCE = 3 V, IC = 7 mA 80 120 160 40 110 250. ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA A IEBO Emitter Cutoff Current IN.

5 At VEB = 1 V, IC = 0 mA A Cre Feedback Capacitance3 at VCB = 3 V, IE = 0 mA, f = 1 MHz pF VCB = 10 V, IE = 0 mA, f = 1 MHz pF PT Total Power Dissipation mW 700 150 100 150 600. RTH (J-A) Thermal Resistance (J-A) C/W 833 1000 833 210. NT. ELECTRICAL CHARACTERISTICS (TA = 25 C). PART NUMBER NE85633 NE85634 NE85635 NE85639/39R. EIAJ1 REGISTERED NUMBER 2SC3356 2SC3357 2SC3603 2SC4093. PACKAGE OUTLINE 33 34 35 39. SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX. fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz O.

6 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB f = 2 GHz dB GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 9 f = 2 GHz dB 10 SC. |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 13. f = 2 GHz dB 7 9 7. hFE Forward Current Gain2 at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 50 120 300. ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA A IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A Cre Feedback Capacitance3 at DI. VCB = 10 V, IE = 0 mA, f = 1 MHz pF PT Total Power Dissipation mW 200 20004 580 200.

7 RTH (J-A) Thermal Resistance (J to A) C/W 625 590 500. Notes: 1. Electronic Industrial Association of Japan. 2. Pulse width 350 s, duty cycle 2% pulsed. 3. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. 4. With cm2 x mm ceramic substrate (infinite heatsink). NE856 SERIES . ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C). SYMBOLS PARAMETERS UNITS RATINGS. VCBO Collector to Base Voltage V 20. VCEO Collector to Emitter Voltage V 12. VEBO Emitter to Base Voltage V IC Collector Current mA 100.

8 TJ Junction Temperature C 1502. D. TSTG Storage Temperature C -65 to +150. Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. UE. 2. Maximum TJ for the NE85600 and NE85635 is 200 C. TYPICAL PERFORMANCE CURVES (TA = 25 C). NE85633 AND NE85635 NE85632 AND NE85634. TOTAL POWER DISSIPATION vs. TOTAL POWER DISSIPATION. IN. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE. 400 NE85634. Total Power Dissipation, PT (mW). Ceramic Substrate Total Power Dissipation, PT (W). Aluminum cm2 X mm 300 Heat Sink RTH (J-A) = C/W. for NE85632.

9 NE85635. NT. 10. 200 NE85632. NE85632 with Heat NE85633 Free Air Sink 100. NE85634. Free Air 0 0. O. 0 50 100 150 200 0 50 100 150. Ambient Temperature, TA ( C) Ambient Temperature, TA ( C). SC. COLLECTOR TO BASE. CAPACITANCE vs. COLLECTOR FORWARD CURRENT GAIN. TO BASE VOLTAGE vs. COLLECTOR CURRENT. 500. Collector to Base Capacitance, COB (pF). VCE = 10 V. 300. DC Forward Current Gain, hFE. 200. NE85634. DI. 100. 70. NE85632/. 33 50. NE85635. 30. 20. 10. 1 2 3 5 7 10 20 30 50 1 2 3 5 7 10 20 30 50. Collector to Base Voltage, VCB (V) Collector Current, IC (mA).

10 NE856 SERIES . TYPICAL PERFORMANCE CURVES (TA = 25 C). NE85634 NE85635. FORWARD INSERTION GAIN FORWARD INSERTION GAIN. AND MAXIMUM AVAILABLE GAIN AND MAXIMUM AVAILABLE GAIN. vs. FREQUENCY vs. FREQUENCY. 25 25. VCE = 10 V. Maximum Available Gain, MAG (dB). Maximum Available Gain, MAG (dB). VCE = 10 V. IC = 20 mA IC = 20 mA. D. 20. Insertion Gain, |S21E|2 (dB). Insertion Gain, |S21E|2 (dB). 20. 15. 15 MAG. MAG. 10. UE. 10 |S21E| 2. 5 2. |S21E|. 5. 0. 0 -5. 1 2 5 10. Frequency, f (GHz) Frequency, f (GHz). IN. NE85632 AND NE85634. GAIN BANDWIDTH PRODUCT INTERMODULATION DISTORTION.