2N4403 General Purpose Transistors - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 31 Publication Order Number: 2N4403 /D2N4403 Preferred Device General PurposeTransistorsPNP SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO40 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device.

2 MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting Techniques ReferenceManual, DIAGRAM2N4403 AYWWGGSee detailed ordering and shipping information in the packagedimensions section on page 2 of this data devices are recommended choices for futureuse and best overall = Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)12312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 12N4403 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage (Note 1)(IC = mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = mAdc, IE = 0)V(BR)CBO40 VdcEmitter Base Breakdown Voltage(IE = mAdc, IC = 0)V(BR) VdcBase Cutoff Current(VCE = 35 Vdc, VEB = Vdc)IBEV Cutoff Current(VCE = 35 Vdc, VEB = Vdc)ICEX CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = Vdc)(IC = mAdc, VCE = Vdc)(IC = 10 mAdc, VCE = Vdc)(IC = 150 mAdc, VCE = Vdc) (Note 1)

3 (IC = 500 mAdc, VCE = Vdc) (Note 1)hFE306010010020 300 Collector Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)fT200 MHzCollector Base Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Ccb Base Capacitance(VEB = Vdc, IC = 0, f = MHz)Ceb 30pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz) k15 kWVoltage Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz) 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)hfe60500 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz) CHARACTERISTICSD elay Time(VCC = 30 Vdc, VBE = + Vdc,IC = 150 mAdc, IB1 = 15 mAdc)td 15nsRise Timetr 20nsStorage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = 15 mA, IB2 = 15 mA)ts 225nsFall Timetf 30ns1.

4 Pulse Test: Pulse Width 300 ms, Duty Cycle INFORMATIOND evicePackageShipping 2N4403TO 925000 Units / Bulk2N4403 GTO 92(Pb Free)5000 Units / Bulk2N4403 RLRATO 922000 / Tape & Reel2N4403 RLRAGTO 92(Pb Free)2000 / Tape & Reel2N4403 RLRMTO 922000 / Ammo Pack2N4403 RLRMGTO 92(Pb Free)2000 / Ammo Pack2N4403 RLRPGTO 92(Pb Free)2000 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 1. Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITS cope rise time < ns*Total shunt capacitance of test jig connectors, and oscilloscope+2 V 16 V10 to 100 ms,DUTY CYCLE = 2% kW 30 V200 WCS* < 10 kW 30 V200 WCS* < 10 pF+ V< 2 to 100 ms,DUTY CYCLE = 2%< 20 ns+14 V0 16 VFigure 3.

5 CapacitancesREVERSE VOLTAGE (VOLTS) 4. Charge DataIC, COLLECTOR CURRENT (mA) (pF)Q, CHARGE (nC) = 30 VIC/IB = 10 CebQTQA25 C100 CTRANSIENT 5. Turn On TimeIC, COLLECTOR CURRENT (mA) 6. Rise TimeIC, COLLECTOR CURRENT (mA)t, TIME (ns)701001020507010020030050030IC/IB = 10tr @ VCC = 30 Vtr @ VCC = 10 Vtd @ VBE(off) = 2 Vtd @ VBE(off) = = 30 VIC/IB = 10tr, RISE TIME (ns)Figure 7. Storage TimeIC, COLLECTOR CURRENT (mA)ts, STORAGE TIME (ns) 102050701002003005003010020705020030IC/I B = 10IC/IB = 20IB1 = IB2ts = ts 1/8 8. Frequency Effectsf, FREQUENCY (kHz)SMALL SIGNAL CHARACTERISTICSNOISE FIGUREVCE = 10 Vdc, TA = 25 C; Bandwidth = HzNF, NOISE FIGURE (dB)IC = mA, RS = 430 WIC = 500 mA, RS = 560 WIC = 50 mA, RS = kWIC = 100 mA, RS = kWRS = OPTIMUM SOURCE RESISTANCE501002005001 k2 k5 k10 k20 k50 k6810042NF, NOISE FIGURE (dB)Figure 9.

6 Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)f = 1 kHzIC = 50 mA100 mA500 mA2N4403 PARAMETERSVCE = 10 Vdc, f = kHz, TA = 25 CThis group of graphs illustrates the relationship betweenhfe and other h parameters for this series of Transistors . Toobtain these curves, a high gain and a low gain unit wereselected from the 2N4403 lines, and the same units wereused to develop the correspondingly numbered curves oneach 10. Current GainIC, COLLECTOR CURRENT (mAdc) , CURRENT GAINhie, INPUT IMPEDANCE (OHMS)Figure 11. Input ImpedanceIC, COLLECTOR CURRENT (mAdc)100 k10 k5 k2 k1 12. Voltage Feedback RatioIC, COLLECTOR CURRENT (mAdc) 13.

7 Output AdmittanceIC, COLLECTOR CURRENT (mAdc) , OUTPUT ADMITTANCE ( mhos)oeh , VOLTAGE FEEDBACK RATIO (X 10 )rem 42N4403 UNIT 12N4403 UNIT k5002002N4403 UNIT 12N4403 UNIT 22N4403 UNIT 12N4403 UNIT 2102N4403 UNIT 12N4403 UNIT 21002N4403 CHARACTERISTICSF igure 14. DC Current GainIC, COLLECTOR CURRENT (mA)Figure 15. Collector Saturation RegionIB, BASE CURRENT (mA) , COLLECTOR EMITTER VOLTAGE (VOLTS) = mA100 , NORMALIZED CURRENT = 125 C 55 CVCE = VVCE = 10 VFigure 16. On VoltagesIC, COLLECTOR CURRENT (mA) 17. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)VOLTAGE (VOLTS) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(sat) @ VCE = 10 VqVC for VCE(sat)qVS for (mV/ C) DIMENSIONSTO 92 (TO 226)CASE 29 11 ISSUE AMNOTES:1.

8 DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1 NOTES:1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED INP AND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM 1 TSTRAIGHT LEADBULK PACKBENT LEADTAPE & REELAMMO PACKSTYLE 1:PIN Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein.

9 SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular Purpose , nor does SCILLC assume anyliability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidentaldamages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary overtime. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license underits patent rights nor the rights of others.

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