2N7000 - Small Signal MOSFET

1 Semiconductor Components Industries, LLC, 2011 April, 2011 Rev. 81 Publication Order Number: 2N7000 /D2N7000 GSmall Signal MOSFET200 mAmps, 60 VoltsN Channel TO 92 Features AEC Qualified PPAP Capable This is a Pb Free Device*MAXIMUM RATINGSR atingSymbolValueUnitDrain Source VoltageVDSS60 VdcDrain Gate Voltage (RGS = MW)VDGR60 VdcGate Source Voltage Continuous Non repetitive (tp 50 ms)VGSVGSM 20 40 VdcVpkDrain Current Continuous PulsedIDIDM200500mAdcTotal Power Dissipation @ TC = 25 CDerate above 25 COperating and Storage TemperatureRangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA357 C/WMaximum Lead Temperature forSoldering Purposes, 1/16 from casefor 10 secondsTL300 CStresses exceeding Maximum Ratings may damage the device.

2 MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, ChannelS1 Source3 Drain2 Gate200 mAMPS60 VOLTSRDS(on) = 5 WSee detailed ordering and shipping information in the packagedimensions section on page 2 of this data DIAGRAMAND PIN ASSIGNMENT2N7000 AYWWGGA= Assembly LocationY= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)12312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 222N7000 CHARACTERISTICS (TC = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSD rain Source Breakdown Voltage(VGS = 0, ID = 10 mAdc)V(BR)DSS60 VdcZero Gate Voltage Drain Current(VDS = 48 Vdc, VGS = 0)(VDS = 48 Vdc, VGS = 0, TJ = 125 C)IDSS Body Leakage Current, Forward(VGSF = 15 Vdc, VDS = 0)IGSSF 10nAdcON CHARACTERISTICS (Note 1)Gate Threshold Voltage(VDS = VGS, ID = mAdc)VGS(th) Drain Source On Resistance(VGS = 10 Vdc, ID = Adc)(VGS = Vdc, ID = 75 mAdc)rDS(on) Source On Voltage(VGS = 10 Vdc, ID = Adc)(VGS = Vdc, ID = 75 mAdc)VDS(on) State Drain Current(VGS = Vdc, VDS = 10 Vdc)Id(on)

3 75 mAdcForward Transconductance(VDS = 10 Vdc, ID = 200 mAdc)gfs100 mmhosDYNAMIC CHARACTERISTICSI nput Capacitance(VDS = 25 V, VGS = 0,f = MHz)Ciss 60pFOutput CapacitanceCoss 25 Reverse Transfer CapacitanceCrss CHARACTERISTICS (Note 1)Turn On Delay Time(VDD = 15 V, ID = 500 mA,RG = 25 W, RL = 30 W, Vgen = 10 V)ton 10nsTurn Off Delay Timetoff 101. Pulse Test: Pulse Width 300 ms, Duty Cycle INFORMATIOND evicePackageShipping 2N7000 GTO 92(Pb Free)1000 Units / Bulk2N7000 RLRAGTO 92(Pb Free)2000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 , DRAIN CURRENT (AMPS)rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE(NORMALIZED)VGS(th), THRESHOLD VOLTAGE (NORMALIZED)ID, DRAIN CURRENT (AMPS) , DRAIN SOURCE VOLTAGE (VOLTS)Figure 1.

4 Ohmic , GATE SOURCE VOLTAGE (VOLTS)Figure 2. Transfer 60- 20+ 20+ 60+ 100+ 140- 60- 20+ 20+ 60+ 100+ 140T, TEMPERATURE ( C)Figure 3. Temperature versus StaticDrain Source On ResistanceT, TEMPERATURE ( C)Figure 4. Temperature versus GateThreshold VoltageTA = 25 CVGS = 10 V9 V8 V7 V6 V4 V3 V5 VVDS = 10 V- 55 C25 C125 CVGS = 10 VID = 200 mAVDS = VGSID = mA2N7000 DIMENSIONSTO 92 (TO 226)CASE 29 11 ISSUE AMNOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN :1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKSTYLE 22:PIN 1.

5 SOURCE2. GATE3. DRAINON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customer s technical experts.

6 SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

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