BD135 - Plastic Medium-Power Silicon NPN Transistors

1 Semiconductor Components Industries, LLC, 2013 December, 2013 Rev. 171 Publication Order Number: BD135 /DBD135G, BD137G, BD139 GPlastic medium -PowerSilicon NPN TransistorsThis series of Plastic , medium power Silicon NPN Transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary High DC Current Gain BD 135, 137, 139 are complementary with BD 136, 138, 140 These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageBD135 GBD137 GBD139 GVCEO456080 VdcCollector Base VoltageBD135 GBD137 GBD139 GVCBO4560100 VdcEmitter Base Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to + 150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to CaseRqJC10 C/WThermal Resistance, Junction to AmbientRqJA100 C/W*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, A power TRANSISTORSNPN SILICON45, 60, 80 V, WY= YearWW= Work WeekBD1xx = Device Codexx = 35, 37, 39G= Pb Free PackageBD139 GTO 225(Pb Free)500 Units / BoxMARKING DIAGRAMBD135 TGTO 225(Pb Free)50 Units / RailBD135 GTO 225(Pb Free)500 Units / BoxBD137 GTO 225(Pb Free)500 Units / BoxORDERING INFORMATION3 BASE1 EMITTERCOLLECTOR2, 4TO 225 CASE 77 09 STYLE 1123 YWWBD1xxGBD135G, BD137G, BD139 CHARACTERISTICS (TC = 25_C unless otherwise noted)

2 CharacteristicSymbolMinMaxUnItCollector Emitter Sustaining Voltage*(IC = Adc, IB = 0) BD135 GBD137 GBD139 GBVCEO*456080 VdcCollector Cutoff Current(VCB = 30 Vdc, IE = 0)(VCB = 30 Vdc, IE = 0, TC = 125_C)ICBO Cutoff Current(VBE = Vdc, IC = 0)IEBO 10mAdcDC Current Gain(IC = A, VCE = 2 V)(IC = A, VCE = 2 V)(IC = A VCE = 2 V)hFE*254025 250 Collector Emitter Saturation Voltage*(IC = Adc, IB = Adc)VCE(sat)* Emitter On Voltage*(IC = Adc, VCE = Vdc)VBE(on)* 1 VdcProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.*Pulse Test: Pulse Width 300 ms, Duty Cycle CHARACTERISTICSF igure 1. DC Current GainFigure 2. Collector Emitter Saturation VoltageIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) , DC CURRENT GAINVCE(sat), COLLECTOR EMITTERSATURATION VOLTAGE (V)VCE = 2 V150 C 55 C25 CIC/IB = 10150 C 55 C25 CBD135G, BD137G, BD139 CHARACTERISTICSF igure 3.

3 Base Emitter Saturation VoltageFigure 4. Base Emitter On VoltageIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 5. CapacitanceFigure 6. Active Region Safe Operating AreaVR, REVERSE VOLTAGE (V)VCE, COLLECTOR EMITTER VOLTAGE (V) (sat), BASE EMITTERSATURATION VOLTAGE (V)VBE(on), BASE EMITTER ON VOLTAGE (V)C, CAPACITANCE (pF)IC, COLLECTOR CURRENT (A)IC/IB = 10150 C 55 C25 CVCE = 2 V150 C 55 C25 Cf = 1 MHzCibCobBD135BD137BD139TJ = 125 Cdc5 msFigure 7. power DeratingTA, AMBIENT TEMPERATURE ( C) , power DISSIPATION (W) , BD137G, BD139 DIMENSIONSTO 225 CASE 77 09 ISSUE :1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: NUMBER AND SHAPE OF LUGS VIEWBACK VIEWFRONT VIEWSIDE VIEW1233214 PIN 4 BACKSIDE TABSTYLE 1:PIN , Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property.

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